IRFH5015TRPBF

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IRFH5015TRPBF

MOSFET N-CH 150V 10A/56A 8PQFN

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仕様

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 50 V
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
Base Product Number IRFH5015

概要

Description

The IRFH5015TRPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is produced by Infineon Technologies under the International Rectifier brand. The device is part of the HEXFET series, known for high efficiency and robust performance.
Key features of the IRFH5015TRPBF include:
1. Voltage and Current Ratings: It typically has a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of around 100A, making it suitable for medium to high power applications.

2. Low On-Resistance: The MOSFET features a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency in switching applications.
3. Package: It is available in a PowerPAK SO-8 package, which provides efficient thermal performance and compact size, suitable for dense PCB layouts.
4. Applications: Commonly used in DC-DC converters, motor control, and power management systems.
5. Thermal Performance: The device is designed to handle high temperatures, with efficient heat dissipation capabilities.
Overall, the IRFH5015TRPBF is a reliable component for designers looking to implement efficient and high-performance power solutions.

Features

The IRFH5015TRPBF is a power MOSFET designed by Infineon Technologies, featuring several key specifications suitable for various applications. It is an N-channel device known for high efficiency and reliability. The MOSFET offers a drain-to-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 100A. Its low on-resistance (R_DS(on)) of 1.5 milliohms ensures minimal power loss, making it ideal for high-current applications.
The IRFH5015TRPBF is packaged in a DirectFET package, which provides excellent thermal performance and a compact footprint, beneficial for space-constrained designs. It supports fast switching speeds, which enhance performance in switching applications and reduce energy losses.
Typical applications include synchronous rectification in DC-DC converters, motor drive circuits, and various power management systems. Additionally, its robustness and thermal efficiency make it suitable for server, network, and telecom equipment. The device is lead-free and RoHS compliant, aligning with environmental regulations.

Package

The IRFH5015TRPBF is a power MOSFET packaged in a PQFN (Power Quad Flat No-Lead) type, which provides efficient thermal performance and compact size suitable for high-power applications.

Pinout

The IRFH5015TRPBF is a power MOSFET from Infineon Technologies, specifically designed for high-frequency switching applications. It features a DirectFET package, which is characterized by its unique design for improved thermal performance and reduced package inductance. The IRFH5015TRPBF has a pin count of 2. This MOSFET is primarily used for applications such as synchronous rectification in DC-DC converters, motor drive circuits, and other power management applications. Its key functions include high-efficiency power conversion and fast switching capabilities, making it suitable for high-performance power supply designs.

Manufacturer

The IRFH5015TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, and produces a wide range of semiconductor solutions, including microcontrollers, sensors, power management ICs, and more. The company focuses on various sectors such as automotive, industrial power control, power management & multimarket, and digital security solutions. Infineon is known for its innovation in energy efficiency, mobility, and security technologies.

Application

The IRFH5015TRPBF is a HEXFET power MOSFET designed for high-efficiency applications. Its application areas include power management in computing and telecom systems, DC-DC converters, synchronous rectification, motor control, and battery protection circuits. Its low on-resistance and high-speed switching make it suitable for applications requiring high power density and efficiency.

Equivalent

The IRFH5015TRPBF is a power MOSFET. Equivalent products would include MOSFETs with similar voltage, current ratings, RDS(on), and package type. Potential equivalents might be found from manufacturers like Infineon, STMicroelectronics, ON Semiconductor, and Nexperia. Always ensure to cross-reference datasheets for exact specifications and pin compatibility when selecting equivalents.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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