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IRFD9024PBF
MOSFET P-CH 60V 1.6A 4DIP
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- Mfr。パート #IRFD9024PBF
- パッケージ
- データシート IRFD9024PBF DataSheet
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仕様
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 960mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD9024 |
概要
Description
The IRFD9024PBF is a P-channel power MOSFET manufactured by Vishay Siliconix. It is designed for applications requiring efficient switching and amplification capabilities. This device features a drain-to-source voltage (V_DS) of -60V and a continuous drain current (I_D) of -2.5A, making it suitable for moderate power applications.
The IRFD9024PBF is part of the HEXFET® series, known for their low on-resistance and fast switching speeds, which contribute to reduced power losses and efficient performance in a variety of circuit designs. The MOSFET is housed in a compact TO-252 (DPAK) package, which allows for easy integration in surface-mount designs.
Its gate-to-source voltage (V_GS) threshold ranges from -2V to -4V, allowing it to be easily controlled by standard logic level signals. This MOSFET is typically used in applications such as DC-DC converters, load switches, and battery-powered devices.
Overall, the IRFD9024PBF is a reliable choice for designers seeking a P-channel MOSFET with good performance characteristics for power management applications.
The IRFD9024PBF is part of the HEXFET® series, known for their low on-resistance and fast switching speeds, which contribute to reduced power losses and efficient performance in a variety of circuit designs. The MOSFET is housed in a compact TO-252 (DPAK) package, which allows for easy integration in surface-mount designs.
Its gate-to-source voltage (V_GS) threshold ranges from -2V to -4V, allowing it to be easily controlled by standard logic level signals. This MOSFET is typically used in applications such as DC-DC converters, load switches, and battery-powered devices.
Overall, the IRFD9024PBF is a reliable choice for designers seeking a P-channel MOSFET with good performance characteristics for power management applications.
Features
The IRFD9024PBF is a P-channel MOSFET designed for various applications that require switching and amplification. Key features include:
1. Voltage and Current: It operates with a drain-source voltage (Vds) of -60V and can handle a continuous drain current (Id) of -2.5A.
2. Rds(on): The MOSFET has a low on-resistance, with a maximum Rds(on) of around 0.5 ohms, which ensures efficient performance with minimal power loss.
3. Package Type: It is available in a compact through-hole DIP (Dual In-line Package), which makes it suitable for applications where space is a constraint.
4. Temperature Range: The device functions effectively within a wide temperature range, making it reliable for use in various environmental conditions.
5. Lead-Free and RoHS Compliant: The IRFD9024PBF is lead-free and compliant with RoHS standards, making it environmentally friendly.
6. Fast Switching: The MOSFET offers fast switching speeds, which is beneficial for high-speed applications.
These features make the IRFD9024PBF suitable for use in power management, small signal switching, and other applications requiring reliable performance in a compact form factor.
1. Voltage and Current: It operates with a drain-source voltage (Vds) of -60V and can handle a continuous drain current (Id) of -2.5A.
2. Rds(on): The MOSFET has a low on-resistance, with a maximum Rds(on) of around 0.5 ohms, which ensures efficient performance with minimal power loss.
3. Package Type: It is available in a compact through-hole DIP (Dual In-line Package), which makes it suitable for applications where space is a constraint.
4. Temperature Range: The device functions effectively within a wide temperature range, making it reliable for use in various environmental conditions.
5. Lead-Free and RoHS Compliant: The IRFD9024PBF is lead-free and compliant with RoHS standards, making it environmentally friendly.
6. Fast Switching: The MOSFET offers fast switching speeds, which is beneficial for high-speed applications.
These features make the IRFD9024PBF suitable for use in power management, small signal switching, and other applications requiring reliable performance in a compact form factor.
Package
The IRFD9024PBF is a P-channel MOSFET housed in a DIP (Dual In-line Package). Specifically, it is offered in a TO-252 package, which is suitable for through-hole mounting.
Pinout
The IRFD9024PBF is a P-channel MOSFET with a total of 4 pins. It is used primarily for switching applications. Here's a quick overview of its pinout and function:
1. Pin 1 (Gate): This is the control terminal for the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Pin 2 (Drain): Current flows from the drain to the source when the MOSFET is turned on.
3. Pin 3 (Source): This is the terminal through which current exits when the MOSFET is conducting.
4. Pin 4 (Drain): This is internally connected to Pin 2, serving as a redundant or alternate drain connection point.
The IRFD9024PBF is typically used in applications requiring high-speed switching, such as power management, motor control, and DC-DC converters. Its P-channel configuration means it can be used for high-side switching.
1. Pin 1 (Gate): This is the control terminal for the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Pin 2 (Drain): Current flows from the drain to the source when the MOSFET is turned on.
3. Pin 3 (Source): This is the terminal through which current exits when the MOSFET is conducting.
4. Pin 4 (Drain): This is internally connected to Pin 2, serving as a redundant or alternate drain connection point.
The IRFD9024PBF is typically used in applications requiring high-speed switching, such as power management, motor control, and DC-DC converters. Its P-channel configuration means it can be used for high-side switching.
Manufacturer
The IRFD9024PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that was originally part of Siemens AG. The company is known for producing a wide range of electronic components, including power semiconductors, microcontrollers, sensors, and more. Infineon Technologies is recognized for its focus on automotive, industrial power control, power management, and digital security solutions.
Application
The IRFD9024PBF is a P-channel MOSFET commonly used in applications such as power management, load switching, and DC-DC converters. It is suitable for use in battery-operated systems, motor control, and other applications requiring efficient voltage regulation and switching. Its low on-resistance and fast switching capabilities make it ideal for use in power supply circuits and various electronic devices where energy efficiency and space savings are crucial.
Equivalent
The IRFD9024PBF is a P-channel MOSFET. Equivalent products include the FQP27P06, NDP6020P, and ZVP4424A. These alternatives have similar characteristics, but always check the datasheets to ensure compatibility with your specific application requirements.
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