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IRFB7537
Infineon
- メーカー
- Mfr。パート #IRFB7537
- パッケージ
- データシート IRFB7537 DataSheet
- 在庫中15608
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仕様
概要
Description
The IRFB7537 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and high-speed switching applications. It features a low on-resistance (R_DS(on)), which reduces power losses and improves thermal performance. With a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) rating of 70A, it is suitable for various applications, including power management in DC-DC converters, motor drives, and inverters.
The IRFB7537 is commonly used in automotive and industrial applications due to its robustness and reliability. Its gate threshold voltage (V_GS(th)) is designed to be compatible with standard logic levels, making it easier to drive in various circuit designs. The device typically comes in a TO-220 package, which facilitates effective heat dissipation.
Overall, the IRFB7537 is a versatile component that combines high performance with efficiency, making it an excellent choice for modern electronic designs requiring reliable power conversion and control.
The IRFB7537 is commonly used in automotive and industrial applications due to its robustness and reliability. Its gate threshold voltage (V_GS(th)) is designed to be compatible with standard logic levels, making it easier to drive in various circuit designs. The device typically comes in a TO-220 package, which facilitates effective heat dissipation.
Overall, the IRFB7537 is a versatile component that combines high performance with efficiency, making it an excellent choice for modern electronic designs requiring reliable power conversion and control.
Features
The IRFB7537 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for various power applications.
2. Current Rating: It supports continuous drain current (I_D) of up to 80A, providing substantial power handling capabilities.
3. R_DS(on): The on-resistance is typically low (about 6.5 mΩ at V_GS = 10V), which reduces power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient drive with lower gate voltages.
5. Fast Switching: The device offers fast switching speeds, making it ideal for high-frequency applications.
6. Packaging: Available in TO-220 and DPAK packages for easy heatsinking and thermal management.
7. Applications: Commonly used in power supplies, motor drives, and other power management circuits.
Overall, the IRFB7537 is a versatile and reliable MOSFET suitable for demanding electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for various power applications.
2. Current Rating: It supports continuous drain current (I_D) of up to 80A, providing substantial power handling capabilities.
3. R_DS(on): The on-resistance is typically low (about 6.5 mΩ at V_GS = 10V), which reduces power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient drive with lower gate voltages.
5. Fast Switching: The device offers fast switching speeds, making it ideal for high-frequency applications.
6. Packaging: Available in TO-220 and DPAK packages for easy heatsinking and thermal management.
7. Applications: Commonly used in power supplies, motor drives, and other power management circuits.
Overall, the IRFB7537 is a versatile and reliable MOSFET suitable for demanding electronic applications.
Package
The IRFB7537 is typically available in a TO-220 package type. This package features a metal tab for heat dissipation, making it suitable for high-power applications.
Pinout
The IRFB7537 is a N-channel MOSFET with a pin count of 5. Its pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation, turning it on or off.
2. Drain (D): The terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal where current enters when the MOSFET is conducting.
The IRFB7537 is designed for power applications, featuring low R_DS(on) for efficient power management and thermal performance. It typically handles high voltages (up to 75V) and currents (up to 120A), making it suitable for applications such as motor drivers, power supplies, and other high-efficiency switching applications.
1. Gate (G): Controls the MOSFET operation, turning it on or off.
2. Drain (D): The terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal where current enters when the MOSFET is conducting.
The IRFB7537 is designed for power applications, featuring low R_DS(on) for efficient power management and thermal performance. It typically handles high voltages (up to 75V) and currents (up to 120A), making it suitable for applications such as motor drivers, power supplies, and other high-efficiency switching applications.
Manufacturer
The IRFB7537 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in a variety of semiconductor solutions, including power semiconductors, microcontrollers, and sensor technologies. Infineon serves various sectors such as automotive, industrial, and consumer electronics, focusing on enhancing energy efficiency and connectivity. The IRFB7537 is a N-channel MOSFET commonly used in power management applications, illustrating Infineon's commitment to providing high-performance components for energy-efficient systems.
Application
The IRFB7537 is a N-channel MOSFET primarily used in power conversion applications, including switch-mode power supplies (SMPS), DC-DC converters, and motor control systems. Its low RDS(on) and fast switching capabilities make it suitable for high-efficiency designs in renewable energy systems, electric vehicles, and industrial automation. Additionally, it is utilized in audio amplifiers and other high-frequency applications where efficient switching is critical.
Equivalent
The IRFB7537 is an N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and IRF3205. Always check the specifications for voltage, current, RDS(on), and package type to ensure compatibility for your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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