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IRFB5620
Infineon
- メーカー
- Mfr。パート #IRFB5620
- パッケージ
- データシート IRFB5620 DataSheet
- 在庫中21195
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仕様
概要
Description
IRFB5620 is a high-performance N-channel MOSFET designed for use in various power electronics applications, including DC-DC converters, motor drives, and power inverters. It features a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power losses during operation. With a maximum drain-source voltage rating typically around 100V and a continuous drain current capacity of around 62A, it is suitable for high-current applications.
The device supports fast switching capabilities, making it ideal for high-frequency operations, and has a robust thermal performance, allowing for effective heat dissipation. Its package, often in TO-220 or similar formats, facilitates easy mounting on heatsinks. The IRFB5620 is widely utilized in automotive, industrial, and renewable energy systems due to its reliability and efficiency.
When selecting this MOSFET, consider parameters such as gate threshold voltage, thermal resistance, and switching speeds to ensure compatibility with your specific application requirements.
The device supports fast switching capabilities, making it ideal for high-frequency operations, and has a robust thermal performance, allowing for effective heat dissipation. Its package, often in TO-220 or similar formats, facilitates easy mounting on heatsinks. The IRFB5620 is widely utilized in automotive, industrial, and renewable energy systems due to its reliability and efficiency.
When selecting this MOSFET, consider parameters such as gate threshold voltage, thermal resistance, and switching speeds to ensure compatibility with your specific application requirements.
Features
The IRFB5620 is a N-channel power MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Continuous drain current (I_D) of 62A at 25°C, suitable for high-current applications.
3. R_DS(on): Low on-resistance of approximately 6.5 mΩ, which minimizes conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 2.0V to 4.0V, enabling efficient drive with lower gate voltages.
5. Fast Switching: Capable of high-frequency operation, which is beneficial for applications like DC-DC converters and motor drives.
6. Thermal Performance: Designed with a TO-220 package for efficient heat dissipation.
7. Applications: Ideal for use in power supplies, inverters, and other power management systems.
These features make the IRFB5620 suitable for demanding applications requiring efficiency and reliability.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Continuous drain current (I_D) of 62A at 25°C, suitable for high-current applications.
3. R_DS(on): Low on-resistance of approximately 6.5 mΩ, which minimizes conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 2.0V to 4.0V, enabling efficient drive with lower gate voltages.
5. Fast Switching: Capable of high-frequency operation, which is beneficial for applications like DC-DC converters and motor drives.
6. Thermal Performance: Designed with a TO-220 package for efficient heat dissipation.
7. Applications: Ideal for use in power supplies, inverters, and other power management systems.
These features make the IRFB5620 suitable for demanding applications requiring efficiency and reliability.
Package
The IRFB5620 is typically available in the TO-220 package type. This package features a metal tab for heat dissipation and is designed for high-power applications.
Pinout
The IRFB5620 is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to this pin allows current to flow between the Drain and Source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IRFB5620 is designed for high-efficiency applications, featuring low on-resistance and high-speed switching capabilities, making it suitable for power management, motor control, and other applications where efficient switching is essential.
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to this pin allows current to flow between the Drain and Source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IRFB5620 is designed for high-efficiency applications, featuring low on-resistance and high-speed switching capabilities, making it suitable for power management, motor control, and other applications where efficient switching is essential.
Manufacturer
The IRFB5620 is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in various sectors, including automotive, industrial, and communication technology, offering a wide range of products such as power semiconductors, microcontrollers, and sensors. The company is known for its innovation in power management and energy efficiency solutions, making it a key player in the semiconductor industry. Infineon serves diverse markets, including renewable energy, electric vehicles, and industrial automation, contributing to advancements in smart and sustainable technologies.
Application
The IRFB5620 is an N-channel MOSFET commonly used in applications such as power supplies, motor drives, and inverter circuits. It is suitable for high-efficiency switching applications, including renewable energy systems, electric vehicles, and industrial automation. Its features make it ideal for DC-DC converters, UPS systems, and other power management solutions where low on-resistance and high-speed switching are essential.
Equivalent
The IRFB5620 is a N-channel MOSFET with a 55V rating and a 94A continuous current capacity. Equivalent products include:
1. STP55NF06L (STMicroelectronics)
2. AOD6N55 (Alpha & Omega Semiconductor)
3. FQP55N06 (Fairchild Semiconductor)
Always check the datasheets for specific parameters to ensure compatibility for your application.
1. STP55NF06L (STMicroelectronics)
2. AOD6N55 (Alpha & Omega Semiconductor)
3. FQP55N06 (Fairchild Semiconductor)
Always check the datasheets for specific parameters to ensure compatibility for your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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