IRFB4710PBF

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IRFB4710PBF

MOSFET N-CH 100V 75A TO220AB

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仕様

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 14mOhm @ 45A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 170 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6160 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

The IRFB4710PBF is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a maximum drain-source voltage (V_DS) of 100 volts and a continuous drain current (I_D) rating of up to 80 amperes, making it suitable for switching applications in power supplies, motor controls, and automotive systems. Its low on-resistance (R_DS(on)) minimizes power losses during operation, enhancing overall system efficiency.
The device generally comes in a TO-220 package, facilitating effective heat dissipation and robust physical characteristics. The IRFB4710PBF is also characterized by its fast switching capabilities, enabling it to handle high-frequency applications efficiently. Additionally, it is RoHS compliant, affirming its suitability for environmentally sensitive applications.
Overall, the IRFB4710PBF is an excellent choice for engineers seeking reliable performance in high-power switching environments.

Features

The IRFB4710PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum Drain-Source Voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: Continuous Drain Current (I_D) of up to 70A at a case temperature of 25°C, allowing for significant load handling capabilities.
3. Low R_DS(on): With a on-resistance of approximately 0.027 ohms, it ensures efficient power dissipation and improved thermal performance.
4. Fast Switching Speed: This MOSFET exhibits rapid switching characteristics, enhancing efficiency in high-frequency applications.
5. Thermal Management: A TO-220 package provides effective heat dissipation, facilitating reliable operation in demanding environments.
6. Gate Threshold Voltage: Low gate threshold voltage allows for easier drive control, making it compatible with various driving circuits.
Overall, the IRFB4710PBF is well-suited for applications such as DC-DC converters, motor drives, and other power management systems.

Package

The IRFB4710PBF is typically packaged in a TO-220 form factor. This package type is suited for power applications, providing efficient thermal performance and easy mounting for heat dissipation.

Pinout

The IRFB4710PBF is an N-channel MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET operation, turning it on or off.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to the ground or negative voltage in a circuit.
The specific arrangement of these pins and their further details can be found in its datasheet. The IRFB4710PBF is designed for high-efficiency power switching applications, featuring low on-resistance and a high-voltage rating, making it suitable for automotive and industrial uses.

Manufacturer

The IRFB4710PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in power semiconductors, microcontrollers, and other electronic components, focusing on sectors such as automotive, industrial, and communication technologies. The company is known for its innovation in power management and energy efficiency solutions, as well as its commitment to sustainability and advancing technology for the Internet of Things (IoT) and smart grid applications.

Application

The IRFB4710PBF is an N-channel MOSFET commonly used in applications such as power management, motor control, DC-DC converters, and switching power supplies. Its high-speed switching capabilities make it suitable for efficient energy conversion in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be utilized in various consumer electronics for power amplification and load switching.

Equivalent

The IRFB4710PBF is a N-channel MOSFET with a voltage rating of 100V and a current rating of 90A. Equivalent products include:
1. STP100NF10
2. FQP100N10
3. AOD9N10
4. IPB180N10N3
5. RFD30N10L
Always verify specifications for exact matches in voltage, current, RDS(on), and package type before substituting.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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