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IRFB4410PBF

Name: IRFB4410PBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 88A TO220AB

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Mfr。パート #IRFB4410PBF
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データシート IRFB4410PBF DataSheet
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仕様

Series	HEXFET®
Part Status	Not For New Designs
Base Product Number	IRFB4410
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5150 pF @ 50 V
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package	TO-220-3
Packaging	Tube

概要

Description

The IRFB4410PBF is a high-performance N-channel MOSFET designed for various applications, including power management, motor control, and switching circuits. It features a low on-resistance (R_DS(on)) of 0.045 ohms (at VGS = 10V), which minimizes power loss and improves efficiency in high-current applications. With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 110A, it is suitable for demanding environments.
The device is housed in a TO-220 package, facilitating easy heat dissipation and mounting. Its fast switching capabilities enable efficient operation in high-frequency applications. Additionally, the IRFB4410PBF is RoHS compliant, making it environmentally friendly.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, a total gate charge (Q_g) of approximately 60 nC, and a maximum power dissipation of 94W. Overall, the IRFB4410PBF is an excellent choice for engineers looking for reliable and efficient power MOSFET solutions.

Features

The IRFB4410PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 100V, allowing it to handle significant voltage levels.
- Current Rating: Continuous drain current of up to 94A, which supports high-load applications.
- RDS(on): Low on-resistance of approximately 0.0045Ω at VGS = 10V, minimizing conduction losses.
- Gate Threshold Voltage (VGS(th)): Ranges from 2V to 4V, suitable for various driving circuits.
- Package Type: Available in TO-220 and D2PAK packages for easy integration into designs.
- Fast Switching Speed: Designed for efficient switching in power conversion applications, contributing to reduced heat generation and improved performance.
- Thermal Resistance: Features low thermal resistance values, enhancing thermal management in high-power applications.
These characteristics make the IRFB4410PBF suitable for use in applications like DC-DC converters, motor drives, and power inverters.

Package

The IRFB4410PBF is typically packaged in a TO-220 form factor, which is a type of metal-encased package suitable for high-power applications, providing effective heat dissipation.

Pinout

The IRFB4410PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This is the control terminal used to turn the MOSFET on or off by applying a voltage.
2. Drain (D): This terminal is where the load current enters the device. It connects to the load in a circuit.
3. Source (S): This terminal is where the load current exits the device. It is typically connected to ground in low-side switching applications.
4. Tab/Heat Sink: The metal tab on the package is used for heat dissipation and may also serve as the source terminal in some configurations.
The IRFB4410PBF is designed for high-speed switching applications, commonly used in power management, motor control, and other power-related circuits. It offers low on-resistance and high current handling capabilities.

Manufacturer

The IRFB4410PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductor and system solutions for various sectors, including automotive, industrial power control, and security. The company focuses on developing products that enhance energy efficiency and performance, catering to the growing demand for innovative technologies in the fields of power management and Internet of Things (IoT) applications. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, and it plays a significant role in advancing industrial and automotive electronics globally.

Application

The IRFB4410PBF is a high-performance N-channel MOSFET used in various applications, including DC-DC converters, motor drives, power inverters, and power supplies. Its low on-resistance and fast switching capabilities make it suitable for energy-efficient designs in renewable energy systems, electric vehicles, and industrial equipment, where effective power management and thermal performance are critical.

Equivalent

Equivalent products to the IRFB4410PBF MOSFET include the STP75NF75, FQP75N75, and AUIRF4410. Ensure to check specifications like voltage, current ratings, and R_DS(on) to confirm compatibility for your specific application.