IRFB4227PBF

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IRFB4227PBF

MOSFET N-CH 200V 65A TO220AB

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仕様

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 65A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 24mOhm @ 46A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4600 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

The IRFB4227PBF is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of up to 80A, making it suitable for power management in various electronic devices. With a low on-resistance (R_DS(on)) of approximately 0.015 ohms, it facilitates minimal power loss during operation, contributing to improved thermal performance and energy efficiency.
The IRFB4227PBF is widely used in applications such as DC-DC converters, motor drives, and power inverters. Its fast switching capabilities allow for effective control in high-frequency applications. Additionally, the device is packaged in a TO-220 format, which aids in efficient heat dissipation.
As a part of Infineon's product line, the IRFB4227PBF is known for its reliability and robustness, making it a popular choice among engineers looking for efficient power solutions. The “PBF” designation indicates that the part is lead-free, complying with environmental regulations.

Features

The IRFB4227PBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 90A, allowing for significant current handling in power circuits.
3. Low R_DS(on): The MOSFET features a low on-resistance (R_DS(on)) of approximately 6.5 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes conduction losses.
4. Fast Switching: Its fast switching capabilities reduce switching losses, making it ideal for high-frequency applications.
5. Thermal Performance: The device has a maximum junction temperature of 175°C, enhancing reliability in demanding environments.
6. TO-220 Package: It comes in a TO-220 package, which provides good thermal performance and ease of mounting.
Overall, the IRFB4227PBF is suitable for applications in power supplies, motor drives, and other high-current, high-efficiency circuits.

Package

The IRFB4227PBF is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing efficient thermal management and ease of mounting to heat sinks.

Pinout

The IRFB4227PBF is an N-channel MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G) - The control terminal that turns the MOSFET on or off.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is turned on.
3. Source (S) - The terminal connected to the ground or negative supply in typical applications.
The device is designed for high-efficiency switching applications, such as in power supplies, motor drives, and DC-DC converters, accommodating high voltage and current levels. Its maximum ratings include a drain-source voltage of 55V and a continuous drain current of 100A. The IRFB4227PBF is known for its low on-resistance and fast switching capabilities, making it suitable for various power management applications.

Manufacturer

The manufacturer of the IRFB4227PBF is Infineon Technologies AG. Infineon is a semiconductor company based in Germany that specializes in designing and manufacturing a wide range of semiconductor products. These products are used in various applications, including automotive, industrial, and consumer electronics. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, focusing on energy efficiency and performance. The company plays a significant role in enabling innovative technologies and solutions in sectors like automotive electronics, renewable energy, and the Internet of Things (IoT).

Application

The IRFB4227PBF is a N-channel MOSFET used in various applications, including power management, motor control, and DC-DC converters. Its high voltage and current capabilities make it suitable for use in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be found in power supplies and inverters, where efficient switching is essential.

Equivalent

The IRFB4227PBF is an N-channel MOSFET. Equivalent products include:
1. STP55NF06 - STMicroelectronics
2. FQD18N50C - Fairchild Semiconductor
3. MTP50N06 - ON Semiconductor
4. BTA10-400V (if looking for similar voltage ratings)
Always verify specifications like voltage, current, and R_DS(on) before substituting to ensure compatibility.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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