IRFB4127PBF

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IRFB4127PBF

MOSFET N-CH 200V 76A TO220AB

100% オリジナル &新しい

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仕様

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 76A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 20mOhm @ 44A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 150 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5380 pF @ 50 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

The IRFB4127PBF is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (R_DS(on)) of 0.027 ohms at V_GS = 10V, which enhances efficiency by reducing power losses during operation. With a maximum drain-source voltage (V_DS) rating of 100V and a continuous drain current (I_D) of 50A, it is suitable for switching and linear applications, including power supplies, motor control, and inverters.
The MOSFET is housed in a TO-220 package, facilitating effective heat dissipation. Its fast switching capabilities make it ideal for applications requiring rapid response and low gate charge (Q_G), minimizing drive power requirements. The IRFB4127PBF is RoHS compliant, ensuring it meets environmental standards. Overall, it is a reliable choice for engineers seeking robust performance in power electronics.

Features

The IRFB4127PBF is a N-channel Power MOSFET designed for high efficiency and fast switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 55V.
2. Current Rating: Continuous drain current (ID) of up to 60A at a case temperature of 25°C.
3. RDS(on): Low on-resistance of 0.012Ω, enhancing efficiency and reducing heat dissipation during operation.
4. Gate Threshold Voltage (VGS(th)): Ranges from 2V to 4V, suitable for logic-level driving.
5. Package: Available in a TO-220 package, facilitating easy heat sinking and mounting.
6. Fast Switching Speed: Ideal for high-frequency applications such as DC-DC converters, motor drives, and power management systems.
7. Thermal Resistance: Low thermal resistance, ensuring better thermal management.
These features make the IRFB4127PBF suitable for a variety of applications, including automotive, industrial, and consumer electronics.

Package

The IRFB4127PBF is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power MOSFETs in applications requiring efficient thermal management.

Pinout

The IRFB4127PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal through which the current flows out of the device.
3. Source (S): The terminal through which the current enters the device.
4. Body Diode (integrated): Provides a path for current flow when the MOSFET is off and can be utilized in certain applications.
This MOSFET is designed for high-efficiency switching applications, making it suitable for power management, DC-DC converters, and motor drives. It features low on-resistance and high-speed switching capabilities, offering improved thermal performance.

Manufacturer

The IRFB4127PBF is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power and sensor technologies, for various applications such as automotive, industrial, and consumer electronics. The company is known for its innovations in power management and is a key player in the field of power semiconductor devices, including MOSFETs like the IRFB4127PBF, which is used in applications such as power converters and inverters. Infineon focuses on sustainability and energy efficiency in its products, contributing to advancements in green technologies.

Application

The IRFB4127PBF is primarily used in application areas such as power supplies, motor drives, and inverters. Its low on-resistance and high-speed switching capabilities make it suitable for DC-DC converters, electric vehicles, renewable energy systems, and industrial power management. It is also ideal for applications requiring efficient energy conversion and thermal performance.

Equivalent

The IRFB4127PBF is an N-channel MOSFET. Equivalent products include:
1. STP75NF75
2. FDP75N06
3. IRF320
4. BSC090N06
5. PM75R0
Always check datasheets for specific electrical characteristics and ensure compatibility with your application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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