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IRFB3307ZPBF
IRFB3307 - 12V-300V N-CHANNEL PO
- メーカー
- Mfr。パート #IRFB3307ZPBF
- パッケージ TO-220AB
- データシート IRFB3307ZPBF DataSheet
- 在庫中4090
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| ProductStatus | Active |
概要
Description
IRFB3307ZPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency switching applications in power management, including DC-DC converters, motor drives, and power supplies. The device features a low on-state resistance (R_DS(on)), which minimizes conduction losses, making it suitable for applications where thermal performance and energy efficiency are critical.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a maximum continuous drain current (I_D) of 120A, and a gate threshold voltage (V_GS(th)) typically between 2V and 4V. The IRFB3307ZPBF is housed in a TO-220 package, facilitating effective heat dissipation. Its robust construction and high performance make it a popular choice in various electronic designs, particularly in automotive and industrial applications.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a maximum continuous drain current (I_D) of 120A, and a gate threshold voltage (V_GS(th)) typically between 2V and 4V. The IRFB3307ZPBF is housed in a TO-220 package, facilitating effective heat dissipation. Its robust construction and high performance make it a popular choice in various electronic designs, particularly in automotive and industrial applications.
Features
The IRFB3307ZPBF is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 120A, making it suitable for high-power applications.
3. RDS(on): It exhibits a low on-resistance (RDS(on)) of around 3.6 mΩ at a gate-source voltage (Vgs) of 10V, which helps minimize power losses.
4. Fast Switching: The MOSFET offers fast switching times, enhancing performance in high-frequency applications.
5. Thermal Performance: It features a robust thermal design, allowing for efficient heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy heat sinking and assembly.
Overall, the IRFB3307ZPBF is ideal for power management, automotive applications, and DC-DC converters, providing efficiency and reliability in demanding environments.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 120A, making it suitable for high-power applications.
3. RDS(on): It exhibits a low on-resistance (RDS(on)) of around 3.6 mΩ at a gate-source voltage (Vgs) of 10V, which helps minimize power losses.
4. Fast Switching: The MOSFET offers fast switching times, enhancing performance in high-frequency applications.
5. Thermal Performance: It features a robust thermal design, allowing for efficient heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy heat sinking and assembly.
Overall, the IRFB3307ZPBF is ideal for power management, automotive applications, and DC-DC converters, providing efficiency and reliability in demanding environments.
Package
The IRFB3307ZPBF is packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient heat dissipation and robust performance in power electronics.
Pinout
The IRFB3307ZPBF is an N-channel MOSFET with a pin count of 7. Its primary function is to serve as a high-efficiency switch in various applications, including DC-DC converters, motor drivers, and power management systems.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The input terminal where current flows in.
4. Body Diode (internal) - Provides a path for reverse current.
The IRFB3307ZPBF features low on-resistance and fast switching capabilities, making it suitable for high-performance power applications. It is designed to handle high current levels and voltages, ensuring efficient operation.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The input terminal where current flows in.
4. Body Diode (internal) - Provides a path for reverse current.
The IRFB3307ZPBF features low on-resistance and fast switching capabilities, making it suitable for high-performance power applications. It is designed to handle high current levels and voltages, ensuring efficient operation.
Manufacturer
The IRFB3307ZPBF is manufactured by International Rectifier, which is a subsidiary of Infineon Technologies. International Rectifier specializes in power management semiconductors, focusing on products such as MOSFETs, IGBTs, and power supplies. The company is known for its innovations in the field of energy-efficient solutions, serving various industries including automotive, industrial, and consumer electronics. Infineon Technologies, the parent company, is a leading global semiconductor manufacturer that provides a wide range of solutions for automotive, industrial, and security applications.
Application
The IRFB3307ZPBF is a N-channel MOSFET primarily used in power management applications. Key areas include DC-DC converters, motor drives, power supplies, and renewable energy systems like solar inverters. Its high efficiency and fast switching capabilities make it suitable for applications requiring low on-resistance and high current handling in industrial, automotive, and consumer electronics.
Equivalent
Equivalent products to the IRFB3307ZPBF MOSFET include:
1. FDPF330N – Fairchild Semiconductor
2. STP330N – STMicroelectronics
3. IRF3307 – International Rectifier (IR)
4. AO3400 – Alpha & Omega Semiconductor
Always verify specifications such as voltage, current, and Rds(on) to ensure compatibility.
1. FDPF330N – Fairchild Semiconductor
2. STP330N – STMicroelectronics
3. IRF3307 – International Rectifier (IR)
4. AO3400 – Alpha & Omega Semiconductor
Always verify specifications such as voltage, current, and Rds(on) to ensure compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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