IRFB3206PBF

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IRFB3206PBF

MOSFET N-CH 60V 120A TO220AB

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仕様

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 150µA
GateCharge(Qg)(Max)@Vgs 170 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6540 pF @ 50 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

The IRFB3206PBF is a high-performance N-channel MOSFET designed for various power applications. It features a low on-resistance (RDS(on)) and a high current rating, making it ideal for switching power supplies, motor control, and other applications requiring efficient power management. The device typically has a maximum continuous drain current of around 120A and a voltage rating of 60V.
Its fast switching capabilities and low gate charge enhance performance in high-frequency applications, while its robust thermal characteristics allow for better heat dissipation, improving overall reliability. The IRFB3206PBF is available in a TO-220 package, facilitating easy heat sinking and integration into existing designs. Additionally, it is RoHS-compliant, ensuring it meets environmental standards. Overall, the IRFB3206PBF is well-suited for engineers looking for efficient and reliable MOSFET solutions in power electronics.

Features

The IRFB3206PBF is an N-channel MOSFET featuring a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 120A. It has a low on-resistance (R_DS(on)) of approximately 7.6 mΩ at a gate-source voltage (V_GS) of 10V, which enhances its efficiency for high-power applications. The device is characterized by fast switching speeds, making it suitable for use in DC-DC converters, power management systems, and motor drives.
Additionally, the IRFB3206PBF offers robust thermal performance with a maximum junction temperature of 175°C, ensuring reliability in demanding environments. It is housed in a TO-220 package, facilitating easy heat dissipation. The device is also RoHS compliant, emphasizing its suitability for environmentally friendly designs. Overall, the IRFB3206PBF is ideal for applications requiring high efficiency and performance in power electronics.

Package

The IRFB3206PBF is available in a TO-220 package type. This package features a large surface area for heat dissipation, making it suitable for high-power applications.

Pinout

The IRFB3206PBF is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): This is the output terminal where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for the current.
4. Drain (D): The second drain pin can be used for improved thermal performance and to handle higher current levels.
5. Source (S): The second source pin serves the same purpose as the primary source pin for enhanced current handling.
The IRFB3206PBF is commonly used in power management applications, motor drives, and power conversion systems due to its high efficiency and low on-resistance.

Manufacturer

The IRFB3206PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer that specializes in power management, automotive, and industrial applications. The company is known for producing a wide range of semiconductor products, including MOSFETs, IGBTs, microcontrollers, and sensors. Infineon focuses on innovative technologies that enhance energy efficiency, performance, and reliability in various markets, such as automotive electronics, industrial automation, and renewable energy. With a strong emphasis on research and development, Infineon plays a significant role in advancing semiconductor solutions for a sustainable future.

Application

The IRFB3206PBF is an N-channel MOSFET widely used in power electronics applications. Its primary application areas include DC-DC converters, motor drives, power supplies, and inverters. It's suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Additionally, it can be found in renewable energy systems, such as solar inverters and battery management systems.

Equivalent

Equivalent products to the IRFB3206PBF MOSFET include the NXP FDBL1535, Infineon BSZ100N10, and ON Semiconductor NTD60N10. These components share similar voltage, current ratings, and specifications, making them suitable alternatives in various applications. Always check the datasheets for exact characteristics before substituting.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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