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IRF9Z34NSTRLPBF
MOSFET P-CH 55V 19A D2PAK
- メーカー
- Mfr。パート #IRF9Z34NSTRLPBF
- パッケージ TO-263-3
- データシート IRF9Z34NSTRLPBF DataSheet
- 在庫中3542
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 19A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 620 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 68W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概要
Description
The IRF9Z34NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance (R_DS(on)), which minimizes power losses during operation, making it suitable for switching applications. This transistor is characterized by its ability to handle high voltages and currents, typically found in power supplies, motor drivers, and various other electronic circuits.
Key specifications often include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and gate threshold voltage (V_GS(th)). The 'Z34' designation indicates specific electrical characteristics, while 'N' signifies its N-channel type, which is generally used for low-side switching. The 'STRLPBF' suffix indicates it is part of a RoHS-compliant package, meaning it is free from hazardous substances.
Overall, the IRF9Z34NSTRLPBF is an essential component in modern electronics, providing reliable performance for efficient power management solutions.
Key specifications often include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and gate threshold voltage (V_GS(th)). The 'Z34' designation indicates specific electrical characteristics, while 'N' signifies its N-channel type, which is generally used for low-side switching. The 'STRLPBF' suffix indicates it is part of a RoHS-compliant package, meaning it is free from hazardous substances.
Overall, the IRF9Z34NSTRLPBF is an essential component in modern electronics, providing reliable performance for efficient power management solutions.
Features
The IRF9Z34NSTRLPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 34V, making it suitable for a variety of power management tasks.
2. Current Rating: It supports a continuous drain current (Id) of up to 30A, allowing it to manage significant loads.
3. Low Rds(on): It has a low on-resistance (Rds(on)) of approximately 0.020 ohms, which minimizes power losses during operation and enhances efficiency.
4. Fast Switching Speed: Optimized for quick switching, it is ideal for applications like DC-DC converters and motor drivers.
5. Package Type: Housed in a TO-220 package, it provides effective thermal management and durability.
6. RoHS Compliant: The device complies with environmental standards, making it suitable for modern applications and markets.
These features make the IRF9Z34NSTRLPBF a reliable choice for power electronics in consumer and industrial applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 34V, making it suitable for a variety of power management tasks.
2. Current Rating: It supports a continuous drain current (Id) of up to 30A, allowing it to manage significant loads.
3. Low Rds(on): It has a low on-resistance (Rds(on)) of approximately 0.020 ohms, which minimizes power losses during operation and enhances efficiency.
4. Fast Switching Speed: Optimized for quick switching, it is ideal for applications like DC-DC converters and motor drivers.
5. Package Type: Housed in a TO-220 package, it provides effective thermal management and durability.
6. RoHS Compliant: The device complies with environmental standards, making it suitable for modern applications and markets.
These features make the IRF9Z34NSTRLPBF a reliable choice for power electronics in consumer and industrial applications.
Package
The IRF9Z34NSTRLPBF is packaged in a TO-220 form factor. This package type provides good thermal performance and is commonly used for power MOSFETs in various electronic applications.
Pinout
The IRF9Z34NSTRLPBF is an N-channel MOSFET with a 3-pin configuration. The pin count and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): The source pin is where the current enters the MOSFET from the power supply or ground.
This MOSFET features a low on-resistance, making it suitable for high-efficiency applications, including power management and switching circuits. It operates at a maximum drain-source voltage (V_DS) of 55V and has a continuous drain current (I_D) rating of 34A.
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): The source pin is where the current enters the MOSFET from the power supply or ground.
This MOSFET features a low on-resistance, making it suitable for high-efficiency applications, including power management and switching circuits. It operates at a maximum drain-source voltage (V_DS) of 55V and has a continuous drain current (I_D) rating of 34A.
Manufacturer
The IRF9Z34NSTRLPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in various sectors including automotive, industrial power control, and security technologies. The company develops a wide range of semiconductor solutions, including power MOSFETs, microcontrollers, and sensors, serving diverse applications from electric vehicles to renewable energy systems. Infineon is known for its innovation and commitment to sustainability, making it a key player in the semiconductor industry.
Application
The IRF9Z34NSTRLPBF is a N-channel MOSFET commonly used in various applications such as power management, DC-DC converters, motor drives, and load switching. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, battery management systems, and automotive applications. Additionally, it can be utilized in LED drivers and other consumer electronics requiring efficient power control.
Equivalent
The IRF9Z34NSTRLPBF is a N-channel MOSFET. Equivalent products include the STP9NK50Z, FQP30N06L, and MTP50N06E. Always verify specifications such as voltage, current rating, and package type before replacement.
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