IRF9389TRPBF

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IRF9389TRPBF

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

100% オリジナル &新しい

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 6.8A, 4.6A
RdsOn(Max)@IdVgs 27mOhm @ 6.8A, 10V
Vgs(th)(Max)@Id 2.3V @ 10µA
GateCharge(Qg)(Max)@Vgs 14nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 398pF @ 15V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

概要

Description

The IRF9389TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high efficiency and excellent thermal performance. It is designed for use in power management applications, including switching power supplies, motor drivers, and DC-DC converters. The device features a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 60A, and a maximum gate-source voltage (V_GS) of ±20V. The MOSFET is housed in a TO-220 package, making it suitable for heat dissipation. It also has fast switching capabilities, which is crucial for high-frequency applications.
The IRF9389TRPBF is a preferred choice for engineers looking to enhance efficiency and reliability in their designs, thanks to its robust performance and versatility in various electronic circuits.

Features

The IRF9389TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Max V_DS of 30V, suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 50A, allowing for robust current handling.
3. R_DS(on): Low on-resistance, typically around 0.008 ohms at V_GS of 10V, minimizing conduction losses.
4. Gate Threshold Voltage: V_GS(th) is typically between 1.0V and 2.5V, enabling operation with lower gate drive voltages.
5. Fast Switching Speed: Designed for efficiency in switching applications, reducing overall power loss.
6. Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
7. Applications: Ideal for power supply circuits, motor control, and other high-speed switching applications.
Overall, the IRF9389TRPBF is characterized by excellent thermal performance and efficiency, making it a reliable choice for power electronic designs.

Package

The IRF9389TRPBF is packaged in a TO-220 form factor. This package type provides efficient thermal performance and is suitable for power applications, allowing for easy mounting on heatsinks.

Pinout

The IRF9389TRPBF is a power MOSFET with a total of 8 pins. Its primary function is to serve as a high-speed switch in various power management applications, including DC-DC converters and motor control systems. The device is designed for efficient switching and low on-resistance, making it suitable for high-frequency operations.
The pin configuration is as follows:
1. Gate (G) - Controls the switching action.
2. Drain (D) - The terminal where the output current flows.
3. Source (S) - The terminal through which the current enters the MOSFET.
4-8. Additional pins for various functions, such as connection to the heat sink or for specific circuit implementations.
This MOSFET operates at high voltage and is optimized for performance in power electronics applications.

Manufacturer

The IRF9389TRPBF is manufactured by Infineon Technologies AG. Infineon is a globally recognized semiconductor company based in Germany, specializing in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on innovative technologies that enhance energy efficiency, connectivity, and security. Infineon is known for its commitment to sustainability and advancing digitalization through its products.

Application

The IRF9389TRPBF is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drivers, load switches, power amplifiers, and battery management systems. It is suitable for high-efficiency switching, providing low on-resistance and fast switching speeds, making it ideal for consumer electronics, automotive systems, and renewable energy applications.

Equivalent

The IRF9389TRPBF is a N-channel MOSFET. Equivalent products include the AOD420, FQP30N06L, STP30NF06, and RFP30N06LE. Always check the datasheets for specific parameters like VDS, ID, RDS(on), and gate threshold voltage to ensure compatibility with your application.

出荷

出荷方法私たち

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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