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IRF9358PBF
MOSFET 2P-CH 30V 9.2A 8SO
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- Mfr。パート #IRF9358PBF
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- データシート IRF9358PBF DataSheet
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仕様
| Series | HEXFET® |
| Part Status | Discontinued at Digi-Key |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A |
| Rds On (Max) @ Id, Vgs | 16.3mOhm @ 9.2A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF9358 |
概要
Description
The IRF9358PBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance, making it suitable for use in power supplies, motor controls, and other switching applications. The device is capable of handling high voltage and current levels, with a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 50A.
This MOSFET operates with a gate threshold voltage (Vgs) typically around 2-4V, allowing it to be driven by low-voltage logic signals. Its fast switching capabilities enable it to minimize power loss in high-frequency applications. The IRF9358PBF is housed in a TO-220 package, which provides efficient thermal management.
In addition to its electrical specifications, the "PBF" designation indicates that the component is lead-free and compliant with RoHS regulations, making it environmentally friendly. Overall, the IRF9358PBF is a versatile and reliable choice for modern electronic designs requiring efficient power handling.
This MOSFET operates with a gate threshold voltage (Vgs) typically around 2-4V, allowing it to be driven by low-voltage logic signals. Its fast switching capabilities enable it to minimize power loss in high-frequency applications. The IRF9358PBF is housed in a TO-220 package, which provides efficient thermal management.
In addition to its electrical specifications, the "PBF" designation indicates that the component is lead-free and compliant with RoHS regulations, making it environmentally friendly. Overall, the IRF9358PBF is a versatile and reliable choice for modern electronic designs requiring efficient power handling.
Features
The IRF9358PBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) up to 62A, suitable for high current applications.
3. R_DS(on): Low on-resistance of approximately 10 mΩ at V_GS of 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V and 4V, allowing for effective drive with lower gate voltages.
5. Fast Switching Speed: Capable of high-frequency operation, making it ideal for applications like DC-DC converters.
6. Package: Available in a TO-220 package, facilitating adequate heat dissipation.
7. RoHS Compliant: Environmentally friendly and compliant with relevant regulations.
These features make the IRF9358PBF suitable for various applications, including power management systems, motor drives, and power inverters.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) up to 62A, suitable for high current applications.
3. R_DS(on): Low on-resistance of approximately 10 mΩ at V_GS of 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V and 4V, allowing for effective drive with lower gate voltages.
5. Fast Switching Speed: Capable of high-frequency operation, making it ideal for applications like DC-DC converters.
6. Package: Available in a TO-220 package, facilitating adequate heat dissipation.
7. RoHS Compliant: Environmentally friendly and compliant with relevant regulations.
These features make the IRF9358PBF suitable for various applications, including power management systems, motor drives, and power inverters.
Package
The IRF9358PBF is packaged in a TO-220 format. This package type provides efficient thermal management and is commonly used for power applications.
Pinout
The IRF9358PBF is a dual N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1): Input gate for the first N-channel MOSFET.
2. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
3. Source 1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Input gate for the second N-channel MOSFET.
5. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
6. Source 2 (S2): Source terminal for the second N-channel MOSFET.
7. Common Source (CS): Common source connection for both MOSFETs (often connected to ground).
8. Tab/Heat Sink: Can be used for heat dissipation.
This device is commonly used in applications requiring efficient switching and is suitable for power management circuits.
1. Gate 1 (G1): Input gate for the first N-channel MOSFET.
2. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
3. Source 1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Input gate for the second N-channel MOSFET.
5. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
6. Source 2 (S2): Source terminal for the second N-channel MOSFET.
7. Common Source (CS): Common source connection for both MOSFETs (often connected to ground).
8. Tab/Heat Sink: Can be used for heat dissipation.
This device is commonly used in applications requiring efficient switching and is suitable for power management circuits.
Manufacturer
The manufacturer of the IRF9358PBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in automotive, industrial, and multi-market applications. The company designs and produces a wide range of semiconductor products, including power transistors, microcontrollers, sensors, and security solutions. Infineon is recognized for its innovation in power management and is a key player in the development of technologies for energy efficiency, connectivity, and secure communication. The IRF9358PBF itself is an N-channel MOSFET primarily used in power management applications.
Application
The IRF9358PBF is a power MOSFET commonly used in applications such as DC-DC converters, motor control, load switching, and power management systems. Its high efficiency and fast switching capabilities make it suitable for use in power supplies, battery management systems, and energy harvesting applications. Additionally, it is often found in automotive and industrial equipment for switching and amplifying signals.
Equivalent
The IRF9358PBF is a N-channel MOSFET. Equivalent products include:
1. IRF3205 - Higher current capacity.
2. IRF540 - Similar voltage ratings but different packaging.
3. STP16NF06 - Comparable specifications for certain applications.
4. FQP30N06L - Lower RDS(on) for improved efficiency.
Always check datasheets for specific parameters to ensure compatibility with your application.
1. IRF3205 - Higher current capacity.
2. IRF540 - Similar voltage ratings but different packaging.
3. STP16NF06 - Comparable specifications for certain applications.
4. FQP30N06L - Lower RDS(on) for improved efficiency.
Always check datasheets for specific parameters to ensure compatibility with your application.
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