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IRF9332TRPBF
MOSFET P-CH 30V 9.8A 8SO
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- Mfr。パート #IRF9332TRPBF
- パッケージ
- データシート IRF9332TRPBF DataSheet
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仕様
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Last Time Buy |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 9.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 17.5mOhm @ 9.8A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1270 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
概要
Description
The IRF9332TRPBF is a N-channel MOSFET designed for high-speed switching applications. It features low on-resistance (R_DS(on)), allowing for efficient power management in various electronic circuits. The device can handle high voltage levels (up to 30V) and supports high current ratings (up to 62A), making it suitable for applications such as power supplies, motor drivers, and DC-DC converters.
Key specifications include a gate threshold voltage (V_GS(th)) of 1V to 2.5V, enabling it to be driven by low-voltage control signals. Its fast switching speeds contribute to reduced power losses and improved thermal performance. The IRF9332TRPBF is packaged in a TO-220 or similar format, facilitating heat dissipation.
Ideal for both automotive and industrial applications, it is often used in conjunction with microcontrollers and other digital logic devices. When designing circuits with this MOSFET, attention should be given to thermal management and proper driving techniques to ensure optimal performance.
Key specifications include a gate threshold voltage (V_GS(th)) of 1V to 2.5V, enabling it to be driven by low-voltage control signals. Its fast switching speeds contribute to reduced power losses and improved thermal performance. The IRF9332TRPBF is packaged in a TO-220 or similar format, facilitating heat dissipation.
Ideal for both automotive and industrial applications, it is often used in conjunction with microcontrollers and other digital logic devices. When designing circuits with this MOSFET, attention should be given to thermal management and proper driving techniques to ensure optimal performance.
Features
The IRF9332TRPBF is an N-channel MOSFET known for its high efficiency and performance in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 62A, which supports high power delivery.
3. On-Resistance: It boasts a low R_DS(on) value, typically around 8.5 mΩ, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V to 2.5V, allowing for easy interfacing with low-voltage control circuits.
5. Package Type: Available in a TO-220 package, which facilitates effective heat dissipation.
6. Fast Switching Speed: Suitable for high-speed switching applications, improving overall efficiency in power conversion and management circuits.
These features make the IRF9332TRPBF ideal for applications in power supplies, motor drivers, and other electronic circuits where efficient switching is crucial.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 62A, which supports high power delivery.
3. On-Resistance: It boasts a low R_DS(on) value, typically around 8.5 mΩ, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V to 2.5V, allowing for easy interfacing with low-voltage control circuits.
5. Package Type: Available in a TO-220 package, which facilitates effective heat dissipation.
6. Fast Switching Speed: Suitable for high-speed switching applications, improving overall efficiency in power conversion and management circuits.
These features make the IRF9332TRPBF ideal for applications in power supplies, motor drivers, and other electronic circuits where efficient switching is crucial.
Package
The IRF9332TRPBF is packaged in a TO-220 form factor, which is a standard package type for power MOSFETs, providing good thermal performance and ease of mounting.
Pinout
The IRF9332TRPBF is a dual N-channel MOSFET housed in a SOIC-8 package, featuring a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1): Input for controlling the first N-channel MOSFET.
2. Drain 1 (D1): Drain terminal for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Input for controlling the second N-channel MOSFET.
5. Drain 2 (D2): Drain terminal for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. N/C: Not connected (do not use).
8. N/C: Not connected (do not use).
This device is designed for high-speed switching applications, making it suitable for power management in various electronic circuits.
1. Gate 1 (G1): Input for controlling the first N-channel MOSFET.
2. Drain 1 (D1): Drain terminal for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Input for controlling the second N-channel MOSFET.
5. Drain 2 (D2): Drain terminal for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. N/C: Not connected (do not use).
8. N/C: Not connected (do not use).
This device is designed for high-speed switching applications, making it suitable for power management in various electronic circuits.
Manufacturer
The IRF9332TRPBF is manufactured by Infineon Technologies AG. Infineon is a multinational semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in the production of a variety of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon serves diverse sectors such as automotive, industrial, and consumer electronics, focusing on applications that require energy efficiency and performance. The IRF9332TRPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor) used in various electronic applications for efficient power management.
Application
The IRF9332TRPBF is a N-channel MOSFET primarily used in high-side switching applications, such as power management, motor control, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, electric vehicles, and power supplies. Additionally, it can be used in load switching and amplification circuits in consumer electronics.
Equivalent
The IRF9332TRPBF is a N-channel MOSFET. Equivalent products include the PSMN2R8-80BS, FDS6910, and STP16NM60N. Always verify specifications like voltage, current, and RDS(on) for compatibility in your application.
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