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IRF7811ATR
MOSFET N-CH 28V 11A 8SO
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- Mfr。パート #IRF7811ATR
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仕様
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 28 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
概要
Description
The IRF7811ATR is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It is commonly used in various electronic devices for switching and amplifying electronic signals. Key features include a low on-resistance, which minimizes power loss and increases efficiency, and a high-speed switching capability, making it suitable for high-frequency applications.
The IRF7811ATR typically operates at a voltage range of up to 30V, with a continuous drain current of approximately 13A, depending on the exact specifications and usage conditions. This makes it suitable for applications that require handling moderate power levels, such as DC-DC converters, motor controllers, and power supplies.
Encased in a standard surface-mount package, the IRF7811ATR is designed to be used on printed circuit boards (PCBs) with minimal space requirements, facilitating compact and efficient design layouts. Its robust construction and thermal performance make it reliable under various operating conditions. In summary, the IRF7811ATR is a versatile and reliable component for modern power management needs.
The IRF7811ATR typically operates at a voltage range of up to 30V, with a continuous drain current of approximately 13A, depending on the exact specifications and usage conditions. This makes it suitable for applications that require handling moderate power levels, such as DC-DC converters, motor controllers, and power supplies.
Encased in a standard surface-mount package, the IRF7811ATR is designed to be used on printed circuit boards (PCBs) with minimal space requirements, facilitating compact and efficient design layouts. Its robust construction and thermal performance make it reliable under various operating conditions. In summary, the IRF7811ATR is a versatile and reliable component for modern power management needs.
Features
The IRF7811ATR is a power MOSFET specifically designed for high-efficiency power management applications. Key features include:
1. Type: N-channel MOSFET, enhancing its suitability for low-side switching applications.
2. Voltage and Current Ratings: It typically handles a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) up to 10A, making it ideal for low to medium power applications.
3. R_ds(on): The device features a low on-state resistance (R_ds(on)), which minimizes conduction losses, improving efficiency.
4. Package: The device is available in an advanced surface-mount SO-8 package, facilitating compact and space-efficient designs.
5. Fast Switching: It offers fast switching speeds, which are critical for high-frequency applications.
6. Thermal Performance: The package design allows for efficient heat dissipation, which is essential for maintaining performance and reliability under load.
7. Applications: It is commonly used in DC-DC converters, load switching, power management, and other applications requiring efficient power handling and control.
These features make the IRF7811ATR a versatile choice for a variety of electronic applications, balancing efficiency, size, and performance.
1. Type: N-channel MOSFET, enhancing its suitability for low-side switching applications.
2. Voltage and Current Ratings: It typically handles a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) up to 10A, making it ideal for low to medium power applications.
3. R_ds(on): The device features a low on-state resistance (R_ds(on)), which minimizes conduction losses, improving efficiency.
4. Package: The device is available in an advanced surface-mount SO-8 package, facilitating compact and space-efficient designs.
5. Fast Switching: It offers fast switching speeds, which are critical for high-frequency applications.
6. Thermal Performance: The package design allows for efficient heat dissipation, which is essential for maintaining performance and reliability under load.
7. Applications: It is commonly used in DC-DC converters, load switching, power management, and other applications requiring efficient power handling and control.
These features make the IRF7811ATR a versatile choice for a variety of electronic applications, balancing efficiency, size, and performance.
Package
The IRF7811ATR is a MOSFET transistor package type known as a D-Pak or TO-252. It features a surface-mount design, making it suitable for applications where space is a premium, offering efficient thermal and electrical performance.
Pinout
The IRF7811ATR is an N-channel MOSFET designed for use in applications requiring high-speed switching and efficient power handling. It typically comes in an SO-8 package, which has 8 pins.
Here is a concise breakdown of its pin functions:
1. Pins 1 and 2: Both serve as the Source (S).
2. Pin 3: Gate (G) - This pin controls the MOSFET's on/off state.
3. Pins 4, 5, 6, 7, and 8: All serve as the Drain (D).
This MOSFET is often utilized in applications like DC-DC converters, power management in portable devices, and as a switch in electronic circuits. Its compact form factor and efficiency make it suitable for various high-frequency applications.
Here is a concise breakdown of its pin functions:
1. Pins 1 and 2: Both serve as the Source (S).
2. Pin 3: Gate (G) - This pin controls the MOSFET's on/off state.
3. Pins 4, 5, 6, 7, and 8: All serve as the Drain (D).
This MOSFET is often utilized in applications like DC-DC converters, power management in portable devices, and as a switch in electronic circuits. Its compact form factor and efficiency make it suitable for various high-frequency applications.
Manufacturer
The IRF7811ATR is manufactured by Infineon Technologies, a leading semiconductor company. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive and industrial electronics. The company is known for its innovations in areas such as energy efficiency, mobility, and security.
Application
The IRF7811ATR is a N-channel MOSFET commonly used in power management applications. Its application areas include DC-DC converters, motor control circuits, battery-powered devices, and load switches. The MOSFET's low on-resistance makes it suitable for high-efficiency power delivery, while its fast switching capabilities are ideal for high-frequency applications. It is also utilized in consumer electronics, telecommunications, and industrial equipment for efficient power regulation and distribution.
Equivalent
The IRF7811ATR is a power MOSFET commonly used in various applications. Equivalent or similar products include:
1. FDS6676AS from ON Semiconductor
2. Si4838DY from Vishay
3. AON7408 from Alpha & Omega Semiconductor
These alternatives generally have similar electrical characteristics and packaging but always check the datasheet to ensure compatibility for your specific application.
1. FDS6676AS from ON Semiconductor
2. Si4838DY from Vishay
3. AON7408 from Alpha & Omega Semiconductor
These alternatives generally have similar electrical characteristics and packaging but always check the datasheet to ensure compatibility for your specific application.
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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