画像は参照用のみです。
IRF7809AV
MOSFET N-CH 30V 13.3A 8SO
- メーカー
- Mfr。パート #IRF7809AV
- パッケージ
- データシート IRF7809AV DataSheet
- 在庫中4010
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 3780 pF @ 16 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
概要
Description
The IRF7809AV is a high-voltage N-channel MOSFET designed for use in power applications. It features a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage switching applications. The device offers a low on-resistance (R_DS(on)) which enhances its efficiency, reducing power losses during operation. With a continuous drain current rating of up to 7A, it can handle substantial loads in various circuits.
Key characteristics include a threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring it can be easily driven by standard logic levels. The IRF7809AV is commonly used in applications such as power supplies, motor drives, and inverters, particularly in renewable energy systems and industrial automation.
Its robust construction and thermal performance allow for reliable operation over a wide temperature range. When integrating this MOSFET into designs, proper thermal management and circuitry considerations are essential to maximize its performance and longevity.
Key characteristics include a threshold voltage (V_GS(th)) ranging from 2V to 4V, ensuring it can be easily driven by standard logic levels. The IRF7809AV is commonly used in applications such as power supplies, motor drives, and inverters, particularly in renewable energy systems and industrial automation.
Its robust construction and thermal performance allow for reliable operation over a wide temperature range. When integrating this MOSFET into designs, proper thermal management and circuitry considerations are essential to maximize its performance and longevity.
Features
The IRF7809AV is a N-channel MOSFET designed for high-power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 90V, making it suitable for a variety of high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 28A, allowing it to manage significant loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) typically around 0.1 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The IRF7809AV is designed for fast switching speeds, facilitating efficient operation in high-frequency applications.
5. Thermal Performance: It includes a robust thermal resistance rating, enabling it to dissipate heat effectively during operation.
6. Package: The device is available in a TO-220 package, which allows for easy mounting and good thermal management.
These features make the IRF7809AV suitable for use in power supplies, motor control, and other high-performance electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 90V, making it suitable for a variety of high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 28A, allowing it to manage significant loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) typically around 0.1 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The IRF7809AV is designed for fast switching speeds, facilitating efficient operation in high-frequency applications.
5. Thermal Performance: It includes a robust thermal resistance rating, enabling it to dissipate heat effectively during operation.
6. Package: The device is available in a TO-220 package, which allows for easy mounting and good thermal management.
These features make the IRF7809AV suitable for use in power supplies, motor control, and other high-performance electronic applications.
Package
The IRF7809AV is typically packaged in a TO-220 format, which is a metal tabbed package designed for power applications, allowing for better heat dissipation and suitable for mounting on heat sinks.
Pinout
The IRF7809AV is a high-voltage N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D): This is the terminal through which the load current flows. It connects to the load in the circuit.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit.
The IRF7809AV is designed for applications requiring high voltage and current handling, often used in switching and amplification applications. Its specifications allow for efficient switching with low on-resistance, making it suitable for power management solutions.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow between the Drain and Source.
2. Drain (D): This is the terminal through which the load current flows. It connects to the load in the circuit.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit.
The IRF7809AV is designed for applications requiring high voltage and current handling, often used in switching and amplification applications. Its specifications allow for efficient switching with low on-resistance, making it suitable for power management solutions.
Manufacturer
The IRF7809AV is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in providing a wide range of products including power semiconductors, microcontrollers, sensors, and automotive components. The company focuses on automotive, industrial power control, and security applications, making it a key player in the electronics industry. Infineon is known for its innovation and contributions to efficient energy management and advanced technology solutions.
Application
The IRF7809AV is a high-voltage N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and switch-mode power supplies. Its features make it suitable for energy-efficient designs in industrial equipment, renewable energy systems, and electric vehicles. Additionally, it can be used in high-speed switching applications due to its fast switching capabilities and low on-resistance.
Equivalent
The IRF7809AV is a high-voltage, N-channel MOSFET. Equivalent products include the IRF7809, STP11NK90Z, MOTF1F90, and FQP13N90. Ensure to check specifications like voltage, current, and RDS(on) for compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25V1635FZNQ03
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix