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IRF7470TRPBF
MOSFET N-CH 40V 10A 8SO
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- Mfr。パート #IRF7470TRPBF
- パッケージ SOIC-8
- データシート IRF7470TRPBF DataSheet
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.8V, 10V |
| RdsOn(Max)@IdVgs | 13mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 44 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 3430 pF @ 20 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
概要
Description
The IRF7470TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a low on-resistance (RDS(on)) of approximately 7.5 mΩ, which allows for reduced power loss and heat generation during operation. The device can handle a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 70A, making it suitable for various automotive and industrial applications, including motor control and power management systems.
The MOSFET is packaged in a TO-220 form factor, facilitating easy heat dissipation, and is optimized for fast switching speeds, which enhances performance in high-frequency applications. Additionally, its gate threshold voltage ranges from 2V to 4V, making it compatible with low-voltage drive circuits. The IRF7470TRPBF is also RoHS-compliant, indicating that it adheres to environmental regulations regarding hazardous substances. Overall, this MOSFET is a reliable choice for engineers seeking efficient, high-performance switching solutions.
The MOSFET is packaged in a TO-220 form factor, facilitating easy heat dissipation, and is optimized for fast switching speeds, which enhances performance in high-frequency applications. Additionally, its gate threshold voltage ranges from 2V to 4V, making it compatible with low-voltage drive circuits. The IRF7470TRPBF is also RoHS-compliant, indicating that it adheres to environmental regulations regarding hazardous substances. Overall, this MOSFET is a reliable choice for engineers seeking efficient, high-performance switching solutions.
Features
The IRF7470TRPBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 75A, allowing for significant power handling.
3. R_DS(on): Low on-resistance (typically around 4.5 mΩ at V_GS = 10V), which minimizes conduction losses.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) ranging from 1V to 2.5V, enabling operation with lower gate drive voltages.
5. Package: Available in a TO-220 package, which facilitates efficient thermal management.
6. Fast Switching: High-speed switching capabilities suitable for applications like DC-DC converters and motor drives.
7. Reliability: Designed for robustness and reliability, with built-in protection features.
These attributes make the IRF7470TRPBF ideal for a variety of applications, including power supply circuits, automotive systems, and industrial controls.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 75A, allowing for significant power handling.
3. R_DS(on): Low on-resistance (typically around 4.5 mΩ at V_GS = 10V), which minimizes conduction losses.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) ranging from 1V to 2.5V, enabling operation with lower gate drive voltages.
5. Package: Available in a TO-220 package, which facilitates efficient thermal management.
6. Fast Switching: High-speed switching capabilities suitable for applications like DC-DC converters and motor drives.
7. Reliability: Designed for robustness and reliability, with built-in protection features.
These attributes make the IRF7470TRPBF ideal for a variety of applications, including power supply circuits, automotive systems, and industrial controls.
Package
The IRF7470TRPBF is typically packaged in a TO-220 form factor, which is a standard package for power MOSFETs. This package offers effective heat dissipation and is suitable for various applications in power management.
Pinout
The IRF7470TRPBF is a N-channel MOSFET with a total of 4 pins. Its primary functions include:
1. Gate (G): This pin controls the MOSFET's switching action. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin connects to ground or the lower potential in the circuit. It is where the current exits the MOSFET.
4. Body Diode: Although not a pin, the IRF7470 has an integrated body diode that allows current to flow from the source to the drain when the MOSFET is off, providing protection against reverse polarity.
The IRF7470TRPBF is suitable for various applications, including power management and switching regulators, due to its low on-resistance and high-speed switching capabilities.
1. Gate (G): This pin controls the MOSFET's switching action. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin connects to ground or the lower potential in the circuit. It is where the current exits the MOSFET.
4. Body Diode: Although not a pin, the IRF7470 has an integrated body diode that allows current to flow from the source to the drain when the MOSFET is off, providing protection against reverse polarity.
The IRF7470TRPBF is suitable for various applications, including power management and switching regulators, due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The IRF7470TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Germany, specializing in a wide range of semiconductor and system solutions. The company focuses on automotive, industrial, and multimarket sectors, providing products such as power semiconductors, microcontrollers, sensors, and security solutions. Infineon is known for its innovations in power management, enabling energy efficiency and sustainability in various applications.
Application
The IRF7470TRPBF is a N-channel MOSFET commonly used in applications such as DC-DC converters, power management systems, motor drives, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency power applications, including renewable energy systems and electric vehicles. Additionally, it can be utilized in industrial automation and consumer electronics for various load-switching tasks.
Equivalent
The IRF7470TRPBF is an N-channel MOSFET. Equivalent products include:
1. STP75NF75 - STMicroelectronics
2. FQP75N75 - Fairchild Semiconductor
3. BSS138 - NXP Semiconductors (lower voltage rating)
4. IRF740 - International Rectifier (higher voltage/current rating)
Always check specifications to ensure compatibility for your specific application.
1. STP75NF75 - STMicroelectronics
2. FQP75N75 - Fairchild Semiconductor
3. BSS138 - NXP Semiconductors (lower voltage rating)
4. IRF740 - International Rectifier (higher voltage/current rating)
Always check specifications to ensure compatibility for your specific application.
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