IRF6710S2TRPBF

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IRF6710S2TRPBF

MOSFET N-CH 25V 12A DIRECTFET

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仕様

Supplier Infineon Technologies
Package Tape & Reel (TR)
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 12A (Ta), 37A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.9mOhm @ 12A, 10V
Vgs(th)(Max)@Id 2.4V @ 25µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1190 pF @ 13 V
PowerDissipation(Max) 1.8W (Ta), 15W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DirectFET™ Isometric S1

概要

Description

The IRF6710S2TRPBF is a power MOSFET designed for high-efficiency switching applications. It features an N-channel configuration, which allows for low on-resistance and high-speed switching, making it suitable for use in power conversion, motor control, and various other applications requiring efficient power management.
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of 100A, which makes it capable of handling substantial loads. The device is housed in a TO-220 package, facilitating easy heat dissipation and installation on circuit boards.
The IRF6710S2TRPBF is particularly noted for its fast switching capabilities, low gate charge, and low R_DS(on), which contribute to minimal power loss during operation. Additionally, it is RoHS-compliant, ensuring it meets environmental safety standards.
This MOSFET is widely used in applications such as DC-DC converters, power inverters, and other switching power supplies, where efficiency and performance are critical.

Features

The IRF6710S2TRPBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for various DC-DC converter and switching applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 62A, allowing it to support high-load applications.
3. Low R_DS(on): With a low on-resistance of around 0.018 ohms (at V_GS = 10V), it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Optimized for rapid switching speeds, making it ideal for high-frequency applications.
5. Thermal Performance: It features a TO-220 package, ensuring effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling compatibility with low-voltage drive circuits.
These features make the IRF6710S2TRPBF suitable for use in power supplies, motor drives, and other high-performance applications.

Package

The IRF6710S2TRPBF is packaged in a TO-220 package type, which is designed for high-power applications, providing good thermal performance and ease of mounting on heat sinks.

Pinout

The IRF6710S2TRPBF is a power MOSFET with a total of 8 pins. It is designed for high-efficiency switching applications. The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the main current flows when the device is on.
3. Source (S) - The terminal through which the current exits when the MOSFET is on.
4. Body Diode (integrated) - Provides a path for current in reverse direction, useful during switching events.
The configuration typically follows a standard layout for power MOSFETs, allowing for easy integration into various circuits, especially in power supply and motor control applications. Be sure to refer to the specific datasheet for detailed electrical characteristics and thermal management recommendations.

Manufacturer

The manufacturer of the IRF6710S2TRPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in various areas including automotive, industrial power control, and security technologies. The company designs, produces, and markets a wide range of semiconductor products, including MOSFETs, which are used in power management applications. Infineon plays a significant role in enabling energy-efficient technologies and is known for its innovation in power semiconductors and system solutions.

Application

The IRF6710S2TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and battery management systems. It is suitable for high-frequency switching, efficient power conversion, and driving loads in various electronic circuits, including consumer electronics, industrial devices, and automotive applications.

Equivalent

The IRF6710S2TRPBF is a N-channel MOSFET. Equivalent products include:
1. BSS138 - small-signal MOSFET
2. IRLZ44N - logic-level N-channel MOSFET
3. STP16NF06 - N-channel MOSFET with higher current rating
Always check specifications for exact voltage, current, and switching characteristics before substituting.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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