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IRF6644TRPBF
MOSFET N-CH 100V 10.3A DIRECTFET
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- Mfr。パート #IRF6644TRPBF
- パッケージ
- データシート IRF6644TRPBF DataSheet
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仕様
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 10.3A (Ta), 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 13mOhm @ 10.3A, 10V |
| Vgs(th)(Max)@Id | 4.8V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 47 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2210 pF @ 25 V |
| PowerDissipation(Max) | 2.8W (Ta), 89W (Tc) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DIRECTFET™ MN |
概要
Description
The IRF6644TRPBF is a N-channel MOSFET designed for efficient power management applications. It features a low on-resistance (RDS(on)) which minimizes conduction losses, making it suitable for high-efficiency switching applications, such as power supplies, DC-DC converters, and motor drives. The device can handle significant voltage (up to 40V) and current (up to 50A), providing robust performance in demanding environments.
With a gate threshold voltage of 2-4V, it can be driven by low-voltage logic levels, enhancing its versatility in various circuits. The TO-220 package allows for effective heat dissipation, making it suitable for high-power applications.
Additionally, the IRF6644TRPBF is part of the RoHS-compliant family of products, ensuring it meets environmental standards. Its reliability and efficiency make it a popular choice among engineers for their designs in both consumer and industrial electronics.
With a gate threshold voltage of 2-4V, it can be driven by low-voltage logic levels, enhancing its versatility in various circuits. The TO-220 package allows for effective heat dissipation, making it suitable for high-power applications.
Additionally, the IRF6644TRPBF is part of the RoHS-compliant family of products, ensuring it meets environmental standards. Its reliability and efficiency make it a popular choice among engineers for their designs in both consumer and industrial electronics.
Features
The IRF6644TRPBF is an N-channel MOSFET designed for high efficiency and performance in various applications. Key features include:
- V_DS Rating: 40V, suitable for low-voltage applications.
- I_D Rating: 45A continuous drain current, allowing for robust power handling.
- R_DS(on): Low on-resistance of approximately 8.5 mΩ at V_GS = 10V, enhancing efficiency by reducing power loss.
- Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, enabling operation at lower gate voltages.
- Fast Switching: Designed for high-speed switching applications, making it ideal for power management and DC-DC converters.
- Package: Available in a TO-220 package, ensuring effective heat dissipation.
These features make the IRF6644TRPBF suitable for applications in power supplies, motor drives, and other electronic circuits requiring efficient power switching.
- V_DS Rating: 40V, suitable for low-voltage applications.
- I_D Rating: 45A continuous drain current, allowing for robust power handling.
- R_DS(on): Low on-resistance of approximately 8.5 mΩ at V_GS = 10V, enhancing efficiency by reducing power loss.
- Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, enabling operation at lower gate voltages.
- Fast Switching: Designed for high-speed switching applications, making it ideal for power management and DC-DC converters.
- Package: Available in a TO-220 package, ensuring effective heat dissipation.
These features make the IRF6644TRPBF suitable for applications in power supplies, motor drives, and other electronic circuits requiring efficient power switching.
Package
The IRF6644TRPBF is packaged in a TO-220 form factor. This package type provides good thermal performance and is suitable for high-power applications.
Pinout
The IRF6644TRPBF is an N-channel MOSFET with a total of 4 pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is the input terminal where the current enters the MOSFET when it is on.
4. Tab/Heat Sink: Often connected to the source for thermal management, helping to dissipate heat generated during operation.
The IRF6644TRPBF is designed for high-efficiency switching applications, featuring low on-resistance and high-speed performance. It operates at a maximum drain-source voltage of 40V and can handle continuous drain currents of up to 71A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is the input terminal where the current enters the MOSFET when it is on.
4. Tab/Heat Sink: Often connected to the source for thermal management, helping to dissipate heat generated during operation.
The IRF6644TRPBF is designed for high-efficiency switching applications, featuring low on-resistance and high-speed performance. It operates at a maximum drain-source voltage of 40V and can handle continuous drain currents of up to 71A.
Manufacturer
The IRF6644TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in a wide range of semiconductor solutions, including power management, automotive, industrial electronics, and security technologies. The company is known for its focus on innovation and sustainability, offering products designed for efficient energy use and advanced connectivity. Infineon serves various industries, including automotive, industrial, and consumer electronics, and is recognized for its high-quality semiconductor devices and integrated solutions.
Application
The IRF6644TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, and motor control. Its low RDS(on) allows for efficient switching in high-frequency applications, making it suitable for power supplies, battery management systems, and electric vehicles. Additionally, it can be utilized in audio amplifiers and industrial control systems, providing reliable performance in demanding environments.
Equivalent
The IRF6644TRPBF is a N-channel MOSFET. Equivalent products include the STP21NF06L, FDB7030BL, and EPC2010. When selecting an alternative, consider parameters such as voltage rating, current rating, RDS(on), and package type to ensure compatibility for your specific application. Always verify the datasheets for precise specifications.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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