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IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK
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- Mfr。パート #IRF640NSPBF
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- データシート IRF640NSPBF DataSheet
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仕様
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tube,Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 67 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1160 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概要
Description
The IRF640NSPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 200 V and a continuous drain current (I_D) rating of up to 9 A, making it suitable for power management in various electronic circuits.
Key characteristics of the IRF640NSPBF include a low on-resistance (R_DS(on)), typically around 0.36 ohms at V_GS of 10 V, which helps reduce power loss during operation. The device is housed in a TO-220 package, facilitating efficient heat dissipation.
This MOSFET is commonly used in applications such as power supplies, motor drives, and high-voltage switching circuits due to its reliability and efficiency. Additionally, the suffix “NSPBF” indicates it is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly.
Overall, the IRF640NSPBF is a versatile component ideal for engineers looking to enhance the performance of their power electronic designs.
Key characteristics of the IRF640NSPBF include a low on-resistance (R_DS(on)), typically around 0.36 ohms at V_GS of 10 V, which helps reduce power loss during operation. The device is housed in a TO-220 package, facilitating efficient heat dissipation.
This MOSFET is commonly used in applications such as power supplies, motor drives, and high-voltage switching circuits due to its reliability and efficiency. Additionally, the suffix “NSPBF” indicates it is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly.
Overall, the IRF640NSPBF is a versatile component ideal for engineers looking to enhance the performance of their power electronic designs.
Features
The IRF640NSPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 9.2A at a case temperature of 25°C.
3. Low R_DS(on): On-resistance is typically 0.36 ohms at V_GS = 10V, which reduces power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for efficient driving.
5. Fast Switching: Designed for rapid switching applications, minimizing delay and energy loss.
6. Surface-Mount Package: Offered in a D2PAK (TO-263) package for easy integration into compact designs.
7. Thermal Performance: Provides good thermal management, facilitating operation in demanding environments.
These features make the IRF640NSPBF suitable for applications such as DC-DC converters, motor control, and power management systems.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 9.2A at a case temperature of 25°C.
3. Low R_DS(on): On-resistance is typically 0.36 ohms at V_GS = 10V, which reduces power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for efficient driving.
5. Fast Switching: Designed for rapid switching applications, minimizing delay and energy loss.
6. Surface-Mount Package: Offered in a D2PAK (TO-263) package for easy integration into compact designs.
7. Thermal Performance: Provides good thermal management, facilitating operation in demanding environments.
These features make the IRF640NSPBF suitable for applications such as DC-DC converters, motor control, and power management systems.
Package
The IRF640NSPBF is typically packaged in a TO-220 format, which is a standard power package designed for efficient heat dissipation. This package is suitable for various applications, including power switching and amplification.
Pinout
The IRF640NSPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - This pin connects to the load and is where current flows out when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground (in most applications) and is where the current enters when the MOSFET is turned on.
The IRF640NSPBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a maximum continuous drain current (I_D) of 9.2A. It is widely used in power switching applications and in circuits requiring efficient control of high voltages and currents.
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - This pin connects to the load and is where current flows out when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground (in most applications) and is where the current enters when the MOSFET is turned on.
The IRF640NSPBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a maximum continuous drain current (I_D) of 9.2A. It is widely used in power switching applications and in circuits requiring efficient control of high voltages and currents.
Manufacturer
The IRF640NSPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and microcontrollers. The company focuses on applications in automotive, industrial, and communication sectors, emphasizing energy efficiency and innovation. Infineon is recognized for its high-performance components, particularly in power management and conversion. The "NSPBF" designation indicates that the product is part of the company's product line offered in a specific packaging format that complies with environmental regulations regarding lead-free soldering.
Application
The IRF640NSPBF is an N-channel MOSFET widely used in various applications, including power switching, motor control, DC-DC converters, and audio amplifiers. Its high voltage and current ratings make it suitable for tasks such as load switching in power supplies and automotive applications. Additionally, it can be utilized in industrial automation and renewable energy systems like solar inverters.
Equivalent
Equivalent products to the IRF640NSPBF MOSFET include the IRF640, STP16NF06, and FQP30N06L. These devices are similar in voltage and current ratings, suitable for similar applications. Always check specific datasheets for detailed parameters to ensure compatibility.
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