IRF6217TRPBF

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IRF6217TRPBF

MOSFET P-CH 150V 700MA 8SO

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仕様

Series HEXFET®
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 420mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

概要

Description

The IRF6217TRPBF is a N-channel MOSFET designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 78A, making it suitable for power management in various electronic devices. The MOSFET has a low on-resistance (R_DS(on)), typically around 0.008Ω, which minimizes power loss during operation, enhancing efficiency.
This component is often utilized in applications such as DC-DC converters, motor drives, and power supplies, where efficient switching is crucial. The IRF6217TRPBF is housed in a TO-220 package, facilitating effective heat dissipation. Its gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing it to be driven by low-voltage logic levels.
Overall, the IRF6217TRPBF is a robust choice for engineers seeking reliable performance in power circuitry, balancing high current capacity with low power loss and fast switching times.

Features

The IRF6217TRPBF is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 62A, allowing it to support high-power devices.
3. R_DS(on): The on-state resistance is low (typically around 10 mΩ), which ensures minimal power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, enabling it to be driven by low-voltage logic levels.
5. Package Type: It is available in a TO-220 package, which provides good thermal performance and is easy to mount.
6. Fast Switching: The device features fast switching speeds, making it suitable for applications in power management, motor control, and DC-DC converters.
7. RoHS Compliant: It meets environmental standards, being free from hazardous substances.
These characteristics make the IRF6217TRPBF ideal for various electronic applications requiring efficiency and reliability.

Package

The IRF6217TRPBF is packaged in a TO-220 form factor, which is a commonly used heat sinkable package for power MOSFETs.

Pinout

The IRF6217TRPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This is the pin through which the current flows out of the MOSFET when it is in the "on" state.
3. Source (S) - This pin is connected to the ground or negative side of the circuit. It is where the current enters the MOSFET.
The IRF6217TRPBF is designed for applications such as power management and switching applications, providing efficient performance at high speeds. Its maximum ratings include a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 62A, making it suitable for various power applications.

Manufacturer

The IRF6217TRPBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, focusing on areas such as power management, automotive electronics, industrial automation, and security technologies. They are known for their innovations in power semiconductors, microcontrollers, and sensors, catering to diverse applications across multiple industries. Infineon plays a significant role in advancing energy efficiency and smart technologies, contributing to sectors like electric mobility and the Internet of Things (IoT).

Application

The IRF6217TRPBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and switch-mode power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for use in battery management systems, LED drivers, and various automotive applications.

Equivalent

The IRF6217TRPBF is a N-channel MOSFET. Equivalent products include:
1. STP16NF06 - STMicroelectronics
2. FQP30N06L - ON Semiconductor
3. BSS138 - Vishay
4. PSMN2R8-80BS - Nexperia
Always check the datasheets for specific parameters like V_DS, I_D, and R_DS(on) to ensure compatibility.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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