画像は参照用のみです。
IRF5801TRPBF
MOSFET N-CH 200V 600MA MICRO6
- メーカー
- Mfr。パート #IRF5801TRPBF
- パッケージ
- データシート
- 在庫中860
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 360mA, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6™(TSOP-6) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | IRF5801 |
概要
Description
The IRF5801TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency in power management circuits. With a maximum drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) capability of up to 50A, this MOSFET is suitable for a variety of applications, including DC-DC converters, motor control, and power supplies.
The "TR" in the part number indicates that it is available in a tape and reel packaging, making it convenient for automated assembly processes. The "PBF" suffix signifies that it is lead-free, complying with environmental regulations such as RoHS.
Key specifications include a low gate threshold voltage (VGS(th)) and fast switching times, making it ideal for applications that require rapid on/off cycling. Overall, the IRF5801TRPBF is a versatile component favored in both consumer electronics and industrial applications due to its performance characteristics.
The "TR" in the part number indicates that it is available in a tape and reel packaging, making it convenient for automated assembly processes. The "PBF" suffix signifies that it is lead-free, complying with environmental regulations such as RoHS.
Key specifications include a low gate threshold voltage (VGS(th)) and fast switching times, making it ideal for applications that require rapid on/off cycling. Overall, the IRF5801TRPBF is a versatile component favored in both consumer electronics and industrial applications due to its performance characteristics.
Features
The IRF5801TRPBF is an N-channel MOSFET designed for high-voltage, high-efficiency power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) up to 30A.
3. R_DS(on): Low on-resistance, typically around 0.027 ohms at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: Voltage required to turn on the MOSFET is between 2V to 4V, allowing for easy interfacing with low-voltage control signals.
5. Fast Switching: High-speed switching capability suitable for PWM applications and other fast-switching designs.
6. Package: Available in the TO-220 package, which provides good thermal management and ease of mounting.
7. Applications: Commonly used in power supplies, motor drivers, and other high-efficiency power conversion circuits.
These features make the IRF5801TRPBF suitable for various industrial and consumer applications where high performance and reliability are required.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) up to 30A.
3. R_DS(on): Low on-resistance, typically around 0.027 ohms at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: Voltage required to turn on the MOSFET is between 2V to 4V, allowing for easy interfacing with low-voltage control signals.
5. Fast Switching: High-speed switching capability suitable for PWM applications and other fast-switching designs.
6. Package: Available in the TO-220 package, which provides good thermal management and ease of mounting.
7. Applications: Commonly used in power supplies, motor drivers, and other high-efficiency power conversion circuits.
These features make the IRF5801TRPBF suitable for various industrial and consumer applications where high performance and reliability are required.
Package
The IRF5801TRPBF is packaged in a TO-220 form factor. This package type is commonly used for power transistors and provides good thermal performance, making it suitable for high-power applications.
Pinout
The IRF5801TRPBF is a N-channel MOSFET designed for power management applications. It typically comes in a DPAK package, which has a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate turns the device on, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on-state. It connects to the load in the circuit.
3. Source (S): This pin is the entry point for current into the MOSFET and is typically connected to ground in common applications.
In summary, the IRF5801TRPBF has 3 pins: Gate, Drain, and Source, serving to control and manage electrical power in various circuits.
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate turns the device on, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on-state. It connects to the load in the circuit.
3. Source (S): This pin is the entry point for current into the MOSFET and is typically connected to ground in common applications.
In summary, the IRF5801TRPBF has 3 pins: Gate, Drain, and Source, serving to control and manage electrical power in various circuits.
Manufacturer
The IRF5801TRPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor products and solutions, including power management, automotive, industrial electronics, and security technology. The company is known for its high-performance semiconductor devices, particularly in power MOSFETs, IGBTs, and microcontrollers, serving various industries such as automotive, industrial, and consumer electronics. Infineon focuses on innovation and sustainability, aiming to provide efficient solutions that contribute to smart and green technologies.
Application
The IRF5801TRPBF is a N-channel MOSFET widely used in various applications, including power management, motor control, and DC-DC converters. It is suitable for high-efficiency switching applications, such as power supplies and automotive systems. Its low on-resistance and high-speed switching capabilities make it ideal for use in power amplifiers and industrial automation.
Equivalent
The IRF5801TRPBF is a N-channel MOSFET. Equivalent products include the STP80NF55, FQP50N06, and AOD602. Make sure to verify specifications such as voltage, current ratings, and package type when selecting an alternative.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX29F040CQI-70G
Macronix
-
MX29F800CBTI-70G
Macronix
-
MX29LV640ETTI-70G
Macronix