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IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
- メーカー
- Mfr。パート #IRF540NSTRLPBF
- パッケージ TO-263-3
- データシート IRF540NSTRLPBF DataSheet
- 在庫中4443
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 33A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 44mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 71 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1960 pF @ 25 V |
| PowerDissipation(Max) | 130W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概要
Description
The IRF540NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in power management and switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 33A, making it suitable for high-voltage and high-current applications.
This MOSFET has a low on-resistance (R_DS(on)) of approximately 0.044 ohms at a gate-source voltage (V_GS) of 10V, allowing for efficient operation with minimal power loss. The IRF540N is characterized by a fast switching speed, which is essential for applications like DC-DC converters, motor drivers, and amplifiers.
The device is encapsulated in a TO-220 package, providing good thermal dissipation, and is ideal for environments requiring reliable performance. Its robustness and efficiency make the IRF540NSTRLPBF a popular choice among engineers in the design of electronic circuits.
This MOSFET has a low on-resistance (R_DS(on)) of approximately 0.044 ohms at a gate-source voltage (V_GS) of 10V, allowing for efficient operation with minimal power loss. The IRF540N is characterized by a fast switching speed, which is essential for applications like DC-DC converters, motor drivers, and amplifiers.
The device is encapsulated in a TO-220 package, providing good thermal dissipation, and is ideal for environments requiring reliable performance. Its robustness and efficiency make the IRF540NSTRLPBF a popular choice among engineers in the design of electronic circuits.
Features
The IRF540NSTRLPBF is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Up to 33A at 25°C, allowing for significant current handling.
3. R_DS(on): Low on-resistance of around 0.044 ohms at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V and 4V, enabling efficient drive with low voltage levels.
5. Fast Switching Speed: Designed for high-speed switching, which enhances efficiency in power conversion applications.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and assembly.
7. Temperature Range: Operating junction temperature up to 175°C, allowing for robust performance in demanding environments.
These features make the IRF540NSTRLPBF ideal for applications like power supplies, motor control, and H-bridge circuits.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Up to 33A at 25°C, allowing for significant current handling.
3. R_DS(on): Low on-resistance of around 0.044 ohms at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V and 4V, enabling efficient drive with low voltage levels.
5. Fast Switching Speed: Designed for high-speed switching, which enhances efficiency in power conversion applications.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and assembly.
7. Temperature Range: Operating junction temperature up to 175°C, allowing for robust performance in demanding environments.
These features make the IRF540NSTRLPBF ideal for applications like power supplies, motor control, and H-bridge circuits.
Package
The IRF540NSTRLPBF is packaged in a TO-220 format. This package type is suitable for high-power applications, providing good thermal performance and heat dissipation.
Pinout
The IRF540NSTRLPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the positive side of the load.
3. Source (S): This pin is the output side of the MOSFET, connected to ground or the lower side of the load.
The IRF540N has a maximum continuous drain current of 33A and a maximum drain-source voltage (V_DS) of 100V, making it suitable for various switching and amplification applications in power electronics.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the positive side of the load.
3. Source (S): This pin is the output side of the MOSFET, connected to ground or the lower side of the load.
The IRF540N has a maximum continuous drain current of 33A and a maximum drain-source voltage (V_DS) of 100V, making it suitable for various switching and amplification applications in power electronics.
Manufacturer
The IRF540NSTRLPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and communication sectors. The company is known for its expertise in power semiconductors, microcontrollers, and sensor technologies, playing a critical role in enabling energy-efficient, secure, and reliable electronic systems. Infineon is recognized for its commitment to innovation and sustainability in the semiconductor industry.
Application
The IRF540NSTRLPBF is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drivers, and power switching circuits. Its high voltage and current handling capabilities make it suitable for industrial automation, automotive systems, and power supplies. Additionally, it is utilized in audio amplifiers and as a switch in various electronic devices.
Equivalent
The IRF540NSTRLPBF is an N-channel MOSFET. Equivalent products include:
1. IRF540
2. STP40NF10
3. FQP30N06L
4. AO3400
5. BSS140
Always verify specifications such as voltage, current, and gate threshold to ensure compatibility for your specific application.
1. IRF540
2. STP40NF10
3. FQP30N06L
4. AO3400
5. BSS140
Always verify specifications such as voltage, current, and gate threshold to ensure compatibility for your specific application.
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