IRF530NPBF

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IRF530NPBF

MOSFET N-CH 100V 17A TO220AB

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仕様

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 17A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 90mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 37 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 920 pF @ 25 V
PowerDissipation(Max) 70W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

The IRF530NPBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 9.2A, making it suitable for various power management tasks. The device operates efficiently with a low on-resistance (R_DS(on)) of around 0.18 ohms, minimizing power loss during conduction.
This MOSFET is commonly used in applications such as power supplies, motor control, and DC-DC converters due to its fast switching capabilities and thermal performance. It is housed in a TO-220 package, allowing for easy heat dissipation. The IRF530NPBF is also RoHS compliant, indicating that it meets environmental regulations regarding hazardous substances.
When incorporating the IRF530NPBF in circuits, attention should be given to its gate drive voltage requirements and thermal considerations to ensure optimal performance and reliability.

Features

The IRF530NPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, allowing it to handle high voltages.
2. Current Rating: Continuous drain current (I_D) of up to 9.2A, making it suitable for various power applications.
3. R_DS(on): Low on-resistance of approximately 0.35 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, facilitating easy drive from standard logic levels.
5. Fast Switching Speed: Suitable for applications requiring rapid on/off switching, such as in power converters and motor controls.
6. Package: Available in TO-220 and other packages for versatile mounting options.
7. Thermal Resistance: Low thermal resistance enhances heat dissipation, improving reliability in demanding environments.
These features make the IRF530NPBF a popular choice in industrial, automotive, and consumer electronics applications.

Package

The IRF530NPBF is typically packaged in a TO-220 form factor, which features a metal tab for heat dissipation and three leads for connections. This package type is favored for high-power applications due to its effective thermal performance.

Pinout

The IRF530NPBF is an N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is the output and is connected to ground or the negative side of the load.
The IRF530 is commonly used for switching applications and amplification in power circuits. It is noted for its ability to handle high voltages and currents, making it suitable for various electronic applications.

Manufacturer

The IRF530NPBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in various applications, including automotive, industrial, and power management. The company focuses on designing and manufacturing products that enhance energy efficiency, safety, and connectivity in electronic systems. Infineon is known for its innovations in power semiconductors, microcontrollers, and sensors, serving a wide range of industries such as automotive, industrial, and consumer electronics.

Application

The IRF530NPBF is a N-channel MOSFET commonly used in power electronics applications. Its primary areas include switching power supplies, motor control circuits, audio amplifiers, and high-speed switching applications. It is ideal for use in load switching, voltage regulation, and inverters due to its high voltage and current ratings, low on-resistance, and efficient thermal performance.

Equivalent

The IRF530NPBF is an N-channel MOSFET. Equivalent products include:
1. IRF540N
2. STP16NF06
3. FQP30N06L
4. RFP30N06LE
Ensure to compare specifications such as voltage rating, current rating, and package type for compatibility.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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