IRF5210STRLPBF

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IRF5210STRLPBF

MOSFET P-CH 100V 38A D2PAK

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 38A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 38A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 230 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2780 pF @ 25 V
PowerDissipation(Max) 3.1W (Ta), 170W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

概要

Description

The IRF5210STRLPBF is a N-channel MOSFET designed for high-efficiency power applications. It features a low on-resistance (RDS(on)) and high current-carrying capability, making it suitable for use in power management, DC-DC converters, and motor control circuits. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 80A, it can handle substantial power loads.
Its fast switching speed minimizes power loss during operation, enhancing overall system efficiency. The MOSFET is housed in a TO-220 package, allowing for effective heat dissipation.
Key specifications include a maximum gate-source voltage (VGS) of ±20V and a total gate charge (Qg) that supports efficient drive requirements. The IRF5210STRLPBF is also RoHS-compliant, indicating it is free from hazardous substances. This makes it a reliable choice for engineers in various industries looking for robust performance in power electronics applications.

Features

The IRF5210STRLPBF is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, allowing it to drive heavy loads.
3. On-Resistance: It features a low on-resistance (Rds(on)) of approximately 0.07 ohms, which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling it to be driven by low-voltage logic levels.
5. Fast Switching Speed: The MOSFET supports fast switching operations, beneficial for switching power supplies and motor control applications.
6. Package Type: It comes in a TO-220 package, providing adequate thermal performance and ease of mounting.
Overall, the IRF5210STRLPBF is ideal for applications such as power management, DC-DC converters, and motor drivers.

Package

The IRF5210STRLPBF is packaged in a TO-220 format, which is a type of metal can package commonly used for power transistors and MOSFETs. This package type provides efficient heat dissipation and is suitable for high-power applications.

Pinout

The IRF5210STRLPBF is an N-channel MOSFET with a pin count of 8. The functions of the pins are as follows:
1. Gate (G): Controls the operation of the MOSFET; applies a voltage to turn it on or off.
2. Drain (D): The output terminal where current flows out of the MOSFET when it is active.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body Diode: Internal diode between the Drain and Source, allowing current to flow in reverse when necessary.
The device is typically used in power management applications, such as switching power supplies and motor drivers, due to its ability to handle high voltages and currents efficiently.

Manufacturer

The IRF5210STRLPBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company focuses on developing technologies for a variety of sectors, such as automotive electronics, IoT, and renewable energy. Infineon is known for its innovations in power semiconductors and has a strong commitment to sustainability and energy efficiency.

Application

The IRF5210STRLPBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and power switching. It is suitable for high-speed switching in various applications such as power supplies, lighting, and battery management systems. Its low on-resistance and high current capability make it ideal for efficient energy transfer in both consumer and industrial electronics.

Equivalent

The IRF5210STRLPBF is an N-channel MOSFET. Equivalent products include:
1. STP30NF10
2. FQP30N10
3. AOD5N10
4. RFD30N10L
5. BSS139
Always check the datasheets for specific parameters like voltage, current ratings, and R_DS(on) to ensure compatibility for your application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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