IRF520NPBF

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IRF520NPBF

MOSFET N-CH 100V 9.7A TO220AB

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仕様

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 9.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 200mOhm @ 5.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 330 pF @ 25 V
PowerDissipation(Max) 48W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

The IRF520NPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power electronics and switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 9.2A, making it suitable for moderate power applications. The MOSFET has a low on-resistance (R_DS(on)) of about 0.27 ohms at a gate voltage (V_GS) of 10V, which helps in reducing power losses when it's conducting.
The IRF520 is widely used in various applications, including DC-DC converters, motor drivers, and switching power supplies. It can be easily controlled by microcontrollers or digital circuits due to its voltage-driven nature, requiring a gate voltage typically between 10V to 20V for optimal performance. Additionally, it comes in a TO-220 package, allowing for efficient heat dissipation. Overall, the IRF520NPBF is favored for its reliability and efficiency in handling high voltages and currents.

Features

The IRF520NPBF is an N-channel MOSFET that offers several key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 9.2A, allowing it to handle significant power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.27 ohms at a gate-source voltage (V_GS) of 10V, which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, enabling it to be driven by lower voltage control signals.
5. Package Type: Available in standard through-hole TO-220 package for easy mounting and heat dissipation.
6. Applications: Commonly used in power management, motor control, and switching applications due to its high efficiency and robustness.
These features make the IRF520NPBF a popular choice for a wide range of electronic and industrial applications.

Package

The IRF520NPBF is typically packaged in a TO-220 format. This package type features three leads and is designed for efficient heat dissipation, making it suitable for power applications.

Pinout

The IRF520NPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows from the source to the drain when the device is activated.
The IRF520NPBF is commonly used in applications such as switching power supplies, motor control, and other power management applications due to its high voltage and current handling capabilities.

Manufacturer

The IRF520NPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in creating a wide range of semiconductor solutions, focusing on areas such as automotive, industrial power control, and security technology. The company is known for its expertise in power management and energy efficiency, providing products that help enhance performance and reliability in various electronic applications, including consumer electronics, automotive systems, and industrial automation. Infineon is also recognized for its commitment to innovation and sustainability in the semiconductor industry.

Application

The IRF520NPBF is an N-channel MOSFET commonly used in various applications, including switching power supplies, motor drivers, and amplification circuits. It is suitable for low-voltage high-current applications, making it ideal for power management in electronic devices, LED drivers, and automotive systems. Additionally, it can be utilized in DIY electronics and robotics for controlling loads and interfacing with microcontrollers.

Equivalent

The IRF520NPBF is a N-channel MOSFET primarily used in switching applications. Equivalent products include:
1. IRF540
2. IRF510
3. IRF530
These alternatives share similar characteristics, but always verify specific ratings and parameters for your application.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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