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IRF3205STRLPBF
IRF3205 - 12V-300V N-CHANNEL POW
- メーカー
- Mfr。パート #IRF3205STRLPBF
- パッケージ D2PAK-3
- データシート IRF3205STRLPBF DataSheet
- 在庫中7998
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仕様
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8mOhm @ 62A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 146 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3247 pF @ 25 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概要
Description
The IRF3205STRLPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance (RDS(on)) of about 8 mΩ, enabling efficient power management with minimal heat generation. The device is ideal for use in power supplies, motor drivers, and DC-DC converters.
With a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) up to 110A, the IRF3205 is suitable for demanding applications. It has a gate threshold voltage (VGS(th)) ranging from 2V to 4V, allowing it to be driven directly by logic-level signals.
The package type is typically D2PAK, which aids in thermal dissipation due to its larger surface area. Its robust performance under varying conditions makes it a popular choice in automotive, industrial, and consumer electronics.
Overall, the IRF3205STRLPBF combines high efficiency and reliability, making it an excellent option for engineers looking for effective solutions in power electronics.
With a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) up to 110A, the IRF3205 is suitable for demanding applications. It has a gate threshold voltage (VGS(th)) ranging from 2V to 4V, allowing it to be driven directly by logic-level signals.
The package type is typically D2PAK, which aids in thermal dissipation due to its larger surface area. Its robust performance under varying conditions makes it a popular choice in automotive, industrial, and consumer electronics.
Overall, the IRF3205STRLPBF combines high efficiency and reliability, making it an excellent option for engineers looking for effective solutions in power electronics.
Features
The IRF3205STRLPBF is a N-channel MOSFET specifically designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-to-source voltage (V_DS) of 55V.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 110A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance of approximately 8 mΩ at V_GS = 10V, which ensures minimal power loss during operation.
4. Gate Threshold Voltage: Gate-to-source threshold voltage (V_GS(th)) ranges from 2V to 4V, providing flexibility in gate drive requirements.
5. Fast Switching: Capable of high-speed switching, enhancing efficiency in power supply circuits and motor control applications.
6. Thermal Performance: Robust thermal characteristics with a maximum junction temperature of 150°C, allowing reliable operation under demanding conditions.
7. Package: Available in a D2PAK package, which provides good thermal management and ease of mounting.
These features make the IRF3205STRLPBF suitable for various applications, including power converters, inverters, and motor drivers.
1. Voltage Rating: Supports a maximum drain-to-source voltage (V_DS) of 55V.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 110A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance of approximately 8 mΩ at V_GS = 10V, which ensures minimal power loss during operation.
4. Gate Threshold Voltage: Gate-to-source threshold voltage (V_GS(th)) ranges from 2V to 4V, providing flexibility in gate drive requirements.
5. Fast Switching: Capable of high-speed switching, enhancing efficiency in power supply circuits and motor control applications.
6. Thermal Performance: Robust thermal characteristics with a maximum junction temperature of 150°C, allowing reliable operation under demanding conditions.
7. Package: Available in a D2PAK package, which provides good thermal management and ease of mounting.
These features make the IRF3205STRLPBF suitable for various applications, including power converters, inverters, and motor drivers.
Package
The IRF3205STRLPBF is packaged in a TO-220 form factor. This package is designed for high-power applications and provides excellent thermal performance and heat dissipation capabilities.
Pinout
The IRF3205STRLPBF is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IRF3205STRLPBF is known for its low on-resistance and high current handling capability, making it suitable for various applications, including power management and switching applications in circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit.
The IRF3205STRLPBF is known for its low on-resistance and high current handling capability, making it suitable for various applications, including power management and switching applications in circuits.
Manufacturer
The manufacturer of the IRF3205STRLPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany that specializes in a wide range of electronic components. The company focuses on products for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, providing innovative solutions to enhance energy efficiency and performance in electronic systems.
Application
The IRF3205STRLPBF is a high-speed N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor drives, and power inverters. Its low on-resistance and high current handling capabilities make it suitable for automotive, industrial, and consumer electronics applications where efficient switching and thermal performance are essential.
Equivalent
The IRF3205STRLPBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 (STMicroelectronics)
2. FQP75N06 (Fairchild)
3. AO3400 (Alpha & Omega Semiconductor)
4. BSC090N06LS (Infineon)
Always verify specifications such as voltage, current, RDS(on), and package type to ensure compatibility for your application.
1. STP75NF75 (STMicroelectronics)
2. FQP75N06 (Fairchild)
3. AO3400 (Alpha & Omega Semiconductor)
4. BSC090N06LS (Infineon)
Always verify specifications such as voltage, current, RDS(on), and package type to ensure compatibility for your application.
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