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IRF150P220
MOSFETs TRENCH >=100V
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- Mfr。パート #IRF150P220
- パッケージ
- データシート IRF150P220 DataSheet
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仕様
| Packaging | Tube |
概要
Description
The IRF150P220 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 220V and a continuous drain current (I_D) rating of up to 18A, making it suitable for switching and amplification in power electronics. With a low on-resistance (R_DS(on)), it provides efficient performance, reducing heat generation during operation.
The device is often used in applications such as power supplies, motor control, and automotive circuits where high efficiency and reliability are essential. It is packaged in a TO-220 format, facilitating heat dissipation and easier integration into electronic circuits.
Key specifications include a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, and a total gate charge that influences switching speeds. The IRF150P220 is favored for its robustness and performance under high-voltage conditions, making it a common choice among engineers in various industrial applications.
The device is often used in applications such as power supplies, motor control, and automotive circuits where high efficiency and reliability are essential. It is packaged in a TO-220 format, facilitating heat dissipation and easier integration into electronic circuits.
Key specifications include a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, and a total gate charge that influences switching speeds. The IRF150P220 is favored for its robustness and performance under high-voltage conditions, making it a common choice among engineers in various industrial applications.
Features
The IRF150P220 is an N-channel MOSFET known for its high voltage and current handling capabilities. Key features include:
1. Voltage Rating: Maximum Drain-Source Voltage (V_DS) of 220V, making it suitable for high-voltage applications.
2. Current Rating: Continuous Drain Current (I_D) of up to 9A, allowing significant power handling.
3. R_DS(on): Low on-resistance (typically around 0.15 ohms) at a gate voltage of 10V, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, enabling it to be driven by lower voltage logic levels.
5. Package: Available in a TO-220 package, facilitating good thermal performance and easy heatsinking.
6. Applications: Ideal for use in power supplies, motor drivers, and other high-performance electronic circuits.
These characteristics make the IRF150P220 suitable for various applications, including automotive, industrial, and consumer electronics.
1. Voltage Rating: Maximum Drain-Source Voltage (V_DS) of 220V, making it suitable for high-voltage applications.
2. Current Rating: Continuous Drain Current (I_D) of up to 9A, allowing significant power handling.
3. R_DS(on): Low on-resistance (typically around 0.15 ohms) at a gate voltage of 10V, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, enabling it to be driven by lower voltage logic levels.
5. Package: Available in a TO-220 package, facilitating good thermal performance and easy heatsinking.
6. Applications: Ideal for use in power supplies, motor drivers, and other high-performance electronic circuits.
These characteristics make the IRF150P220 suitable for various applications, including automotive, industrial, and consumer electronics.
Package
The IRF150P220 is typically available in a TO-220 package type, which is a semiconductor package designed for power transistors and MOSFETs. This package offers good thermal performance and is suitable for heat dissipation in various applications.
Pinout
The IRF150P220 is an N-channel power MOSFET with a total of three pins. The pin functions are as follows:
1. Gate (G): This pin receives the voltage signal that controls the MOSFET. When a voltage is applied to the gate, it allows current to flow from drain to source.
2. Drain (D): This pin is connected to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply.
The IRF150P220 is designed for high-speed switching and can handle high voltage and current, making it suitable for various applications in power electronics.
1. Gate (G): This pin receives the voltage signal that controls the MOSFET. When a voltage is applied to the gate, it allows current to flow from drain to source.
2. Drain (D): This pin is connected to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply.
The IRF150P220 is designed for high-speed switching and can handle high voltage and current, making it suitable for various applications in power electronics.
Manufacturer
The IRF150P220 is manufactured by Infineon Technologies AG, a prominent semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovations in power electronics, particularly MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which are used in various electronic devices and systems to enhance efficiency and performance. Infineon serves various industries, including automotive, industrial, and consumer electronics, positioning itself as a leader in the semiconductor market.
Application
The IRF150P220 is an N-channel MOSFET commonly used in power electronics applications, such as DC-DC converters, motor control, and switching power supplies. Its high voltage and current ratings make it suitable for efficient power management in industrial equipment, automotive systems, and renewable energy systems like solar inverters. Additionally, it can be utilized in audio amplifiers and lighting control systems for improved performance and reliability.
Equivalent
The IRF150P220 is an N-channel MOSFET. Equivalent products include the IRF150, IRF250, and STP16NF06. Ensure to check specifications such as voltage, current ratings, and R_DS(on) for compatibility in your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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