IRF100S201

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IRF100S201

MOSFET N-CH 100V 192A D2PAK

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仕様

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series HEXFET®, StrongIRFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 192A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.2mOhm @ 115A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 255 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9500 pF @ 50 V
PowerDissipation(Max) 441W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3

概要

Description

The IRF100S201 is a type of N-channel MOSFET designed for high-speed switching applications. It is part of the International Rectifier family of power MOSFETs, known for their efficiency and reliability. The device typically features low on-resistance (RDS(on)), allowing for minimal power loss during operation, making it suitable for a variety of applications, including power supplies, motor control, and automotive systems.
Key specifications often include a high voltage rating, typically around 100V, and a maximum continuous current rating, which can vary based on the package type and thermal management. The IRF100S201 is designed to handle high pulse current, making it ideal for demanding applications.
Its gate threshold voltage is optimized for low drive requirements, and it can be driven directly by microcontrollers or logic-level devices. The package options may vary, but they are designed for easy integration into circuit designs. Overall, the IRF100S201 is a versatile component in the field of power electronics.

Features

The IRF100S201 is a high-power N-channel MOSFET designed for various applications, particularly in switching and power management. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Offers a high continuous drain current (I_D) rating of up to 200A, allowing it to handle significant load currents.
3. Low On-Resistance: Features a low R_DS(on) of around 0.018 ohms, which minimizes power losses and enhances efficiency during operation.
4. Fast Switching Speed: Optimized for fast switching, reducing the transition losses in high-frequency applications.
5. Thermal Management: Designed with a robust thermal performance, allowing it to operate effectively in various thermal conditions (with proper heatsinking).
6. Package Type: Available in a TO-220 package, facilitating easy integration into circuits and effective heat dissipation.
Overall, the IRF100S201 is suitable for applications in power supplies, motor drives, and other high-efficiency circuitry.

Package

The IRF100S201 is available in a TO-220 package type. This type features a metal tab for heat sinking, suitable for power applications, and provides efficient thermal management.

Pinout

The IRF100S201 is a power MOSFET, specifically an N-channel MOSFET. It typically has a total of 3 pins.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The source is the terminal through which current enters the MOSFET when it is conducting.
Key specifications include high voltage and current handling capabilities, making it suitable for various power management applications. Always refer to the specific datasheet for precise electrical characteristics and ratings.

Manufacturer

The IRF100S201 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions, including power electronics, microcontrollers, sensors, and automotive electronics. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on products that enhance energy efficiency and connectivity. Infineon is recognized for its innovation in power management and has a strong presence in the global semiconductor market.

Application

The IRF100S201 is a high-voltage, N-channel MOSFET primarily used in power electronics applications. It is suitable for switch-mode power supplies, motor drives, and high-efficiency DC-DC converters. Additionally, it can be employed in electric vehicles, renewable energy systems, and industrial automation for energy management and control. Its fast switching capabilities and low on-resistance make it ideal for high-frequency applications.

Equivalent

The IRF100S201 is a power MOSFET. Equivalent products include the IRF100N, STP100N, and BSS84. Always verify specific parameters like voltage, current, and package type when selecting an equivalent.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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