IR2130STRPBF

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IR2130STRPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

100% オリジナル &新しい

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365日の保証

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType 3-Phase
NumberofDrivers 6
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 2.2V
Current-PeakOutput(SourceSink) 250mA, 500mA
InputType Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 80ns, 35ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 28-SOIC (0.295, 7.50mm Width)

概要

Description

The IR2130STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed for various power electronics applications. Manufactured by Infineon Technologies, this device is part of their extensive range of intelligent power modules. It features a full-bridge configuration, which is essential for driving multiple power transistors efficiently.
Key features include integrated high-side and low-side power MOSFET drivers, under-voltage lockout protection, and a high level of input-output isolation, enabling it to handle high-voltage operations safely. The IR2130STRPBF is suited for applications such as motor drives, power inverters, and other high-voltage power management systems.
The driver is housed in a surface-mount package, making it suitable for compact and space-constrained designs. It operates efficiently across a wide temperature range, making it reliable for industrial and automotive environments.
Overall, the IR2130STRPBF offers robust performance and reliability for power systems requiring precise control and efficient operation of high-voltage components.

Features

The IR2130STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Here are some key features:
1. High Voltage Range: The device can handle floating channel voltages up to 600V, making it suitable for high-voltage applications.
2. Gate Drive Capability: It has output drivers capable of sourcing and sinking up to 210 mA and 360 mA, respectively.
3. Bootstrap Operation: The device includes a bootstrap diode to facilitate high-side driver bootstrapping.
4. Logic Input Compatibility: Compatible with standard TTL and CMOS logic inputs, ensuring ease of integration with various control circuits.
5. Protection Features: Includes shoot-through prevention circuitry, undervoltage lockout for both high-side and low-side outputs, and a dead-time insertion capability to prevent cross-conduction.
6. Compact Packaging: Available in a 28-lead SOIC package, which is suitable for space-constrained applications.
7. Thermal Protection: Designed with thermal shutdown protection to prevent damage due to overheating.
These features make the IR2130STRPBF a versatile option for driving power transistors in a variety of high-performance motor control and power conversion applications.

Package

The IR2130STRPBF is typically available in a surface-mount package known as the 44-pin PLCC (Plastic Leaded Chip Carrier). This package type is designed for efficient thermal performance and compact PCB footprint, making it suitable for various electronic applications.

Pinout

The IR2130STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. It is part of the IR213x family of devices from Infineon Technologies.
The IR2130STRPBF features a 28-pin configuration. Its primary function is to provide the necessary gate drive signals to control power transistors in inverter and motor control applications. It does so by utilizing bootstrap capacitors to supply the high-side gate drive voltages, allowing for efficient switching of high-side transistors.
The device includes important features such as under-voltage lockout for both high-side and low-side drivers, cross-conduction prevention logic to avoid shoot-through currents, and separate logic and power ground pins to ensure noise immunity. This makes the IR2130STRPBF suitable for various high-voltage applications, including industrial drives, motor control systems, and general-purpose inverters.

Manufacturer

The IR2130STRPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company known for developing and manufacturing a wide range of semiconductor solutions. They specialize in products for automotive, industrial, and consumer electronics, as well as security systems. Infineon is recognized for its innovation in power semiconductors, sensors, microcontrollers, and digital security solutions.

Application

The IR2130STRPBF is a high-voltage gate driver IC used in various applications, including motor control, power inverters, and switched-mode power supplies. It is ideal for driving MOSFETs and IGBTs in half-bridge and full-bridge configurations, making it suitable for industrial motor drives, HVAC systems, electric vehicles, and renewable energy systems like solar inverters. Its ability to handle high voltages and provide efficient switching makes it a crucial component in applications requiring accurate motor control and efficient power conversion.

Equivalent

The IR2130STRPBF is a three-phase bridge driver IC. Equivalent or similar products include:
1. IRS2330D - Another version from the same manufacturer offering similar functionalities.
2. IR2136 - Provides similar functionality with minor differences in specifications.
3. FAN73832 - From ON Semiconductor, a comparable 3-phase gate driver.
4. L6384E - STMicroelectronics' solution for similar gate driving needs.
Ensure to check the specific electrical specifications and features to confirm compatibility with your application.

出荷

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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