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IR2130J
IC GATE DRVR HALF-BRIDGE 44PLCC
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- Mfr。パート #IR2130J
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- 在庫中6982
100% オリジナル &新しい
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365日の保証
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仕様
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | 3-Phase |
| Number of Drivers | 6 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V |
| Current - Peak Output (Source, Sink) | 250mA, 500mA |
| Input Type | Inverting |
| Rise / Fall Time (Typ) | 80ns, 35ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 44-LCC (J-Lead), 32 Leads |
| Supplier Device Package | 44-PLCC, 32 Leads (16.58x16.58) |
| Base Product Number | IR2130 |
| High Side Voltage - Max (Bootstrap) | 600 V |
概要
Description
"Introduction to IR2130J" likely refers to a foundational course in International Relations, possibly focusing on specific theories, regions, or issues. Although course specifics can vary by institution, such a class generally covers the basic principles of international relations, including the key theories like realism, liberalism, and constructivism. Students might explore the roles of international organizations, state and non-state actors, global governance, and international law. The course could also address contemporary global issues such as conflict, trade, human rights, and environmental challenges.
Students are typically introduced to analytical frameworks that help in understanding how countries interact on the global stage and the factors influencing international policies. Skills developed might include critical thinking, analytical writing, and the ability to evaluate complex political scenarios. Readings could include a mix of theoretical texts and case studies, offering both academic and practical insights into the workings of international relations. This course serves as a stepping stone for more advanced studies in international politics or related fields.
Students are typically introduced to analytical frameworks that help in understanding how countries interact on the global stage and the factors influencing international policies. Skills developed might include critical thinking, analytical writing, and the ability to evaluate complex political scenarios. Readings could include a mix of theoretical texts and case studies, offering both academic and practical insights into the workings of international relations. This course serves as a stepping stone for more advanced studies in international politics or related fields.
Features
The IR2130J is a high-voltage, high-speed power MOSFET and IGBT driver. It features integrated high-side and low-side power MOSFET drivers with independent high- and low-side referenced output channels, making it suitable for various half-bridge and full-bridge configurations. Key features include:
1. High Voltage: Capable of driving high-voltage levels, often used in applications such as motor drives and power supplies.
2. Floating Channel: The high-side driver can be floated up to 600V, enabling it to handle high-side switching in a half-bridge circuit.
3. Bootstrap Capability: The inclusion of a bootstrap diode facilitates high-side gate drive, eliminating the need for additional external components.
4. Under-Voltage Lockout (UVLO): Provides protection by ensuring the gate drive voltage is sufficient to drive the MOSFETs or IGBTs, preventing potential damage.
5. High-Speed Operation: Designed for fast switching speeds, improving efficiency and performance in rapid switching applications.
6. Independent Control: Allows independent control of the high- and low-side outputs, providing flexibility in driving configurations.
The compact and efficient design of the IR2130J makes it suitable for a range of applications in power electronics, requiring reliable and efficient driving of MOSFETs or IGBTs.
1. High Voltage: Capable of driving high-voltage levels, often used in applications such as motor drives and power supplies.
2. Floating Channel: The high-side driver can be floated up to 600V, enabling it to handle high-side switching in a half-bridge circuit.
3. Bootstrap Capability: The inclusion of a bootstrap diode facilitates high-side gate drive, eliminating the need for additional external components.
4. Under-Voltage Lockout (UVLO): Provides protection by ensuring the gate drive voltage is sufficient to drive the MOSFETs or IGBTs, preventing potential damage.
5. High-Speed Operation: Designed for fast switching speeds, improving efficiency and performance in rapid switching applications.
6. Independent Control: Allows independent control of the high- and low-side outputs, providing flexibility in driving configurations.
The compact and efficient design of the IR2130J makes it suitable for a range of applications in power electronics, requiring reliable and efficient driving of MOSFETs or IGBTs.
Package
The IR2130J is a high-voltage, high-speed power MOSFET and IGBT driver. It typically comes in a 28-lead dual in-line package (DIP), specifically a PDIP (Plastic Dual In-line Package).
Pinout
The IR2130J is a three-phase bridge driver IC designed to drive power MOSFETs and IGBTs in three-phase applications. It is commonly used in motor control and other high-power applications. The IR2130J features 28 pins, each serving various functions related to the operation and control of the device.
Key pin functions include:
- Supply Pins: VCC and VSS for low-side logic and power; VDD for high-side power.
- Input Pins: LIN1, LIN2, LIN3 for low-side gate drive inputs; HIN1, HIN2, HIN3 for high-side gate drive inputs.
- Output Pins: LO1, LO2, LO3 for low-side gate drive outputs; HO1, HO2, HO3 for high-side gate drive outputs.
- Sense and Feedback Pins: VS1, VS2, VS3 for high-side floating supply return; COM for common reference.
- Bootstrap Pins: VB1, VB2, VB3 for high-side floating supply.
- Other Pins: Fault reporting and shutdown pins for protection and control.
The IR2130J integrates protection features like undervoltage lockout and cross-conduction prevention to enhance performance and reliability.
Key pin functions include:
- Supply Pins: VCC and VSS for low-side logic and power; VDD for high-side power.
- Input Pins: LIN1, LIN2, LIN3 for low-side gate drive inputs; HIN1, HIN2, HIN3 for high-side gate drive inputs.
- Output Pins: LO1, LO2, LO3 for low-side gate drive outputs; HO1, HO2, HO3 for high-side gate drive outputs.
- Sense and Feedback Pins: VS1, VS2, VS3 for high-side floating supply return; COM for common reference.
- Bootstrap Pins: VB1, VB2, VB3 for high-side floating supply.
- Other Pins: Fault reporting and shutdown pins for protection and control.
The IR2130J integrates protection features like undervoltage lockout and cross-conduction prevention to enhance performance and reliability.
Manufacturer
The IR2130J is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing, manufacturing, and marketing a wide range of semiconductor solutions. They focus on various sectors, including automotive, industrial power control, power management and multimarket, and digital security solutions. Infineon is known for providing semiconductor solutions that enhance energy efficiency, mobility, and security.
Application
The IR2130J is a high-voltage, high-speed power MOSFET and IGBT driver. It is commonly used in applications such as electric motor drives, power inverters, uninterruptible power supplies (UPS), and industrial automation systems. Its ability to efficiently drive MOSFETs and IGBTs makes it suitable for controlling and converting power in various electronic devices, enhancing performance and efficiency in medium to high-power applications.
Equivalent
The IR2130J is a high-voltage, high-speed power MOSFET and IGBT driver. Equivalent products include the IR2132, IR2133, and IR2135. Additionally, similar functionality might be found in driver ICs from other manufacturers, such as the L6384 from STMicroelectronics or the FAN73832 from ON Semiconductor. Compatibility should be verified based on specific electrical characteristics and pin configurations.
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