IR2110STRPBF

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IR2110STRPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

100% オリジナル &新しい

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 3.3V ~ 20V
LogicVoltage-VILVIH 6V, 9.5V
Current-PeakOutput(SourceSink) 2A, 2A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 500 V
Rise/FallTime(Typ) 25ns, 17ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 16-SOIC (0.295, 7.50mm Width)

概要

Description

The IR2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver integrated circuit (IC) designed to drive both low-side and high-side switches in half-bridge applications. Manufactured by Infineon Technologies, this IC is especially useful in applications requiring efficient and reliable switching, such as motor drives, power supplies, and inverters.
Key features of the IR2110STRPBF include:
1. High-Voltage Capability: It can handle up to 600V, making it suitable for high-power applications.
2. High-Speed Operation: It supports fast switching speeds up to 500 kHz, enhancing performance and efficiency.
3. Bootstrap Circuitry: Includes built-in bootstrap functionality for high-side driver operation, reducing the need for external components.
4. Protection Features: Offers a range of protection mechanisms like under-voltage lockout and cross-conduction prevention to enhance reliability and safeguard the system.
5. Wide Supply Voltage Range: Operates from 10V to 20V, providing flexibility for different applications.
With its robust feature set, the IR2110STRPBF is ideal for engineers designing systems that require precise and efficient control of high-power switches.

Features

The IR2110STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Key features include:
1. High Voltage Capability: It can handle up to 600V, making it suitable for high-voltage applications.
2. Drive Capability: It can source/sink 2A/2A current, providing strong drive capability.
3. Floating Channel: The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration.
4. High-Speed Operation: It offers fast switching speeds with propagation delays typically around 120 ns and a delay matching of 10 ns.
5. Under-Voltage Lockout (UVLO): Both high and low-side drivers feature under-voltage lockout protection to ensure reliable operation.
6. Bootstrap Circuitry: It includes a bootstrap diode for easy high-side drive implementation.
7. Input Logic Compatibility: The logic inputs are compatible with standard CMOS or LSTTL outputs.
The IR2110STRPBF is used in various applications such as motor drives, power inverters, and switched-mode power supplies, where robust and efficient high-side and low-side driving are required.

Package

The IR2110STRPBF is packaged in a SOIC-16 (Small Outline Integrated Circuit) type, which is a surface-mount package with 16 pins. This package is commonly used for driver ICs like the IR2110S, providing a compact form for circuit integration.

Pinout

The IR2110STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is part of the IR2110 series manufactured by Infineon Technologies. The IR2110STRPBF comes in a 14-pin package.
The pin functions are as follows:
1. VCC: Logic and low-side fixed supply voltage.
2. VB: High-side floating supply voltage.
3. HO: High-side gate drive output.
4. VS: High-side floating supply return.
5. VDD: Logic supply.
6. HIN: Logic input for high-side gate driver.
7. LIN: Logic input for low-side gate driver.
8. COM: Logic ground.
9. LO: Low-side gate drive output.
10. VSS: Low-side return.
11. NC: No connection.
12. NC: No connection.
13. NC: No connection.
14. NC: No connection.
This driver is suitable for applications requiring high speed and high voltage control of power transistors, including motor drives and power supplies.

Manufacturer

The IR2110STRPBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company known for its innovative and reliable products used in various applications. It operates globally and specializes in producing semiconductor solutions for automotive, industrial, power management, and digital security markets. Infineon's products include microcontrollers, sensors, power semiconductors, and security controllers, contributing to advancements in energy efficiency, mobility, and security.

Application

The IR2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. Its application areas include motor drives, uninterruptible power supplies (UPS), induction heating, solar inverters, and switch-mode power supplies (SMPS). It is commonly used in these applications to efficiently and reliably drive high-power transistors, ensuring effective power management and conversion.

Equivalent

Equivalent products to the IR2110STRPBF, a high- and low-side driver IC, include the following:
1. IR2110S: A variant with similar specifications.
2. MCP1407: A dual MOSFET driver with comparable functions.
3. FAN7392: A high-side and low-side gate driver with similar capabilities.
4. L6387: A high-voltage high- and low-side driver with matching features.
5. IRS2110: Another variant from the same manufacturer with similar performance.
Before selecting an alternative, ensure compatibility with your specific application requirements.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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