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IR2109STRPBF
IR2109S - GATE DRIVER
- メーカー
- Mfr。パート #IR2109STRPBF
- パッケージ SOIC-8
- データシート IR2109STRPBF DataSheet
- 在庫中7238
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仕様
| Package | Bulk |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.9V |
| Current-PeakOutput(SourceSink) | 200mA, 350mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 150ns, 50ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The IR2109STRPBF is a high-side and low-side driver IC designed by Infineon Technologies (previously International Rectifier). It is typically used in power electronics to drive MOSFETs or IGBTs. This driver IC is known for its capability to drive both high-side and low-side MOSFETs, making it ideal for applications such as DC-DC converters, motor drives, and other switching power applications.
The device features under-voltage lockout protection and is capable of handling rapid switching frequencies, enhancing efficiency and performance in power management systems. The IR2109STRPBF is also noted for its robust floating channel, which can be used for bootstrap operation up to 600V.
In terms of packaging, it usually comes in a 14-lead SOIC package, providing a compact form factor suitable for a variety of designs. It is RoHS compliant, ensuring that it meets environmental and safety standards. Overall, the IR2109STRPBF is valued for its reliability and versatility in driving power transistors in various industrial applications.
The device features under-voltage lockout protection and is capable of handling rapid switching frequencies, enhancing efficiency and performance in power management systems. The IR2109STRPBF is also noted for its robust floating channel, which can be used for bootstrap operation up to 600V.
In terms of packaging, it usually comes in a 14-lead SOIC package, providing a compact form factor suitable for a variety of designs. It is RoHS compliant, ensuring that it meets environmental and safety standards. Overall, the IR2109STRPBF is valued for its reliability and versatility in driving power transistors in various industrial applications.
Features
The IR2109STRPBF is a high-side and low-side gate driver IC from Infineon Technologies, designed to drive MOSFETs and IGBTs. Key features include:
1. High-Side and Low-Side Drivers: It provides separate high-side and low-side referenced output channels.
2. Bootstrap Circuitry: Built-in circuitry for bootstrap operation, facilitating high-side drive capability.
3. Floating Channel Capability: Operates up to 600V, enabling high-voltage applications.
4. Undervoltage Lockout (UVLO): Ensures the gate driver does not operate if supply voltage is too low, protecting power transistors from damage.
5. Logic Inputs: Compatible with standard CMOS or LSTTL outputs, down to 3.3V.
6. Propagation Delay: Offers matched propagation delays, typically around 120 ns, minimizing shoot-through risk.
7. Dead Time Insertion: Programmable dead time to prevent simultaneous conduction of high-side and low-side transistors.
8. Current Consumption: Low quiescent current, enhancing efficiency.
9. Package and Thermal Performance: Available in an 8-lead SOIC package, ensuring compact design and efficient thermal performance.
These features make the IR2109STRPBF suitable for applications like motor drives, power supplies, and other systems requiring high-voltage, high-speed switching.
1. High-Side and Low-Side Drivers: It provides separate high-side and low-side referenced output channels.
2. Bootstrap Circuitry: Built-in circuitry for bootstrap operation, facilitating high-side drive capability.
3. Floating Channel Capability: Operates up to 600V, enabling high-voltage applications.
4. Undervoltage Lockout (UVLO): Ensures the gate driver does not operate if supply voltage is too low, protecting power transistors from damage.
5. Logic Inputs: Compatible with standard CMOS or LSTTL outputs, down to 3.3V.
6. Propagation Delay: Offers matched propagation delays, typically around 120 ns, minimizing shoot-through risk.
7. Dead Time Insertion: Programmable dead time to prevent simultaneous conduction of high-side and low-side transistors.
8. Current Consumption: Low quiescent current, enhancing efficiency.
9. Package and Thermal Performance: Available in an 8-lead SOIC package, ensuring compact design and efficient thermal performance.
These features make the IR2109STRPBF suitable for applications like motor drives, power supplies, and other systems requiring high-voltage, high-speed switching.
Package
The IR2109STRPBF is housed in an SOIC-8 (Small Outline Integrated Circuit) package, which is a surface-mount package used for ICs. It's commonly employed for its compact design, suitable for applications where space is limited.
Pinout
The IR2109STRPBF is a high-side and low-side driver IC used for driving MOSFETs and IGBTs in half-bridge configurations. It features a total of 8 pins. Here is a brief description of its pin functions:
1. VCC: Power supply for the logic and low-side gate driver.
2. IN: Logic input for controlling the high-side and low-side outputs.
3. VS: High-side floating supply return. It is typically connected to the source of the high-side MOSFET.
4. VB: High-side floating supply voltage. It is used to drive the high-side MOSFET.
5. HO: High-side gate drive output. Connected to the gate of the high-side MOSFET.
6. COM: Common ground reference for the low-side driver.
7. LO: Low-side gate drive output. Connected to the gate of the low-side MOSFET.
8. NC: No connection.
The IR2109STRPBF is designed to provide efficient, reliable gate-driving capabilities with protection features suitable for a wide range of applications, such as motor drives, power supplies, and other half-bridge circuits.
1. VCC: Power supply for the logic and low-side gate driver.
2. IN: Logic input for controlling the high-side and low-side outputs.
3. VS: High-side floating supply return. It is typically connected to the source of the high-side MOSFET.
4. VB: High-side floating supply voltage. It is used to drive the high-side MOSFET.
5. HO: High-side gate drive output. Connected to the gate of the high-side MOSFET.
6. COM: Common ground reference for the low-side driver.
7. LO: Low-side gate drive output. Connected to the gate of the low-side MOSFET.
8. NC: No connection.
The IR2109STRPBF is designed to provide efficient, reliable gate-driving capabilities with protection features suitable for a wide range of applications, such as motor drives, power supplies, and other half-bridge circuits.
Manufacturer
The IR2109STRPBF is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company provides products covering areas such as automotive, industrial power control, power management, digital security solutions, and more. Infineon is known for its innovative solutions that enhance energy efficiency, mobility, and security across various industries.
Application
The IR2109STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is commonly used in applications such as motor control, power supplies, DC-DC converters, inverters, and other power management systems. Its ability to efficiently drive high-side and low-side MOSFETs or IGBTs makes it suitable for use in automotive, industrial automation, renewable energy systems, and home appliances.
Equivalent
The IR2109STRPBF is a high- and low-side MOSFET driver. Equivalent products include the IRS2109STRPBF, MIC4109, FAN7390, and the UCC27201. These alternatives offer similar functionalities but may vary in specific parameters such as supply voltage range, package type, and switching speed. Always verify compatibility with your specific application requirements before substituting.
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