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IR2101STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
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- Mfr。パート #IR2101STRPBF
- パッケージ SOIC 8N
- データシート IR2101STRPBF DataSheet
- 在庫中6415
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 3V |
| Current-PeakOutput(SourceSink) | 210mA, 360mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 100ns, 50ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The IR2101STRPBF is a high-side/low-side gate driver integrated circuit (IC) manufactured by Infineon Technologies. It is designed to drive power MOSFETs and IGBTs in various switching applications, including motor drives, power supplies, and DC-DC converters. The device is optimized for use in half-bridge and full-bridge configurations.
Key features of the IR2101STRPBF include high-voltage capability, typically up to 600V, and the ability to operate with low-side and high-side power MOSFETs or IGBTs. It has a floating channel that can be used for bootstrap operation, providing a cost-effective solution for high-side drive applications.
The IC also incorporates under-voltage lockout (UVLO) protection for both high and low sides, ensuring reliable operation by preventing the gate driver from turning on the power device unless the supply voltage is within the specified range. The IR2101STRPBF comes in a surface mount package, making it suitable for compact designs.
Overall, the IR2101STRPBF offers robust and efficient performance for driving power transistors in various high-voltage and high-speed applications.
Key features of the IR2101STRPBF include high-voltage capability, typically up to 600V, and the ability to operate with low-side and high-side power MOSFETs or IGBTs. It has a floating channel that can be used for bootstrap operation, providing a cost-effective solution for high-side drive applications.
The IC also incorporates under-voltage lockout (UVLO) protection for both high and low sides, ensuring reliable operation by preventing the gate driver from turning on the power device unless the supply voltage is within the specified range. The IR2101STRPBF comes in a surface mount package, making it suitable for compact designs.
Overall, the IR2101STRPBF offers robust and efficient performance for driving power transistors in various high-voltage and high-speed applications.
Features
The IR2101STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed to drive low-side and high-side switches. Key features include:
1. High-Side Floating Supply: The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration up to 600V.
2. Gate Drive Capability: It can source and sink 210mA and 290mA, respectively, providing robust drive capability for quickly charging and discharging power transistor gates.
3. Undervoltage Lockout: Both the high-side and low-side drivers have undervoltage lockout protection to prevent malfunctioning under low supply voltages.
4. Propagation Delay: The IC offers a fast propagation delay of approximately 120ns, ensuring quick response times for switching applications.
5. Input Logic Compatibility: The input logic is compatible with standard CMOS or LSTTL outputs down to 3.3V logic.
6. Low Quiescent Current: Designed to minimize power consumption with a low quiescent current.
7. Bootstrap Circuitry: The inclusion of necessary bootstrap circuitry simplifies the design process for high-side driver implementation.
These features make the IR2101STRPBF suitable for applications in motor drives, power supplies, and other systems requiring efficient MOSFET or IGBT driving.
1. High-Side Floating Supply: The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration up to 600V.
2. Gate Drive Capability: It can source and sink 210mA and 290mA, respectively, providing robust drive capability for quickly charging and discharging power transistor gates.
3. Undervoltage Lockout: Both the high-side and low-side drivers have undervoltage lockout protection to prevent malfunctioning under low supply voltages.
4. Propagation Delay: The IC offers a fast propagation delay of approximately 120ns, ensuring quick response times for switching applications.
5. Input Logic Compatibility: The input logic is compatible with standard CMOS or LSTTL outputs down to 3.3V logic.
6. Low Quiescent Current: Designed to minimize power consumption with a low quiescent current.
7. Bootstrap Circuitry: The inclusion of necessary bootstrap circuitry simplifies the design process for high-side driver implementation.
These features make the IR2101STRPBF suitable for applications in motor drives, power supplies, and other systems requiring efficient MOSFET or IGBT driving.
Package
The IR2101STRPBF is packaged in an 8-pin SOIC (Small Outline Integrated Circuit) surface-mount package.
Pinout
The IR2101STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It comes in an 8-pin configuration.
The pin functions are as follows:
1. VCC: Supply voltage for the lower gate driver.
2. IN: Logic input for controlling the output stages.
3. COM: Common ground reference for the IC.
4. LO: Low-side gate drive output.
5. VS: High-side floating supply return.
6. VB: High-side floating supply voltage.
7. HO: High-side gate drive output.
8. NC: No connection.
This IC is typically used in applications like motor drives, power supplies, and other systems requiring efficient, high-speed switching.
The pin functions are as follows:
1. VCC: Supply voltage for the lower gate driver.
2. IN: Logic input for controlling the output stages.
3. COM: Common ground reference for the IC.
4. LO: Low-side gate drive output.
5. VS: High-side floating supply return.
6. VB: High-side floating supply voltage.
7. HO: High-side gate drive output.
8. NC: No connection.
This IC is typically used in applications like motor drives, power supplies, and other systems requiring efficient, high-speed switching.
Manufacturer
The IR2101STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in a wide range of electronic components. They focus on products for automotive, industrial, power management, and digital security applications. Known for their innovation in the semiconductor industry, Infineon offers solutions that enhance energy efficiency, mobility, and security in various technological environments.
Application
The IR2101STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. Its application areas include motor control, lighting control, switch-mode power supplies, and induction heating. It is commonly used in industrial and consumer electronic applications to drive MOSFETs and IGBTs in half-bridge and full-bridge configurations, making it suitable for various power conversion and control systems.
Equivalent
The IR2101STRPBF is a half-bridge MOSFET driver. Equivalent products include the MIC4427 from Microchip, the FAN7382 from ON Semiconductor, the TC4420 from Microchip, and the L6387 from STMicroelectronics. Always verify pin compatibility and electrical characteristics when selecting a substitute.
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