IR2010STRPBF

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IR2010STRPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

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仕様

Part Status Active
DigiKey Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, MOSFET (N-Channel)
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V
Current - Peak Output (Source, Sink) 3A, 3A
Input Type Non-Inverting
Rise / Fall Time (Typ) 10ns, 15ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Base Product Number IR2010
High Side Voltage - Max (Bootstrap) 200 V

概要

Description

"Introduction to IR2010STRPBF" likely refers to an introductory overview of a specific course, module, or concept related to International Relations (IR) or a specialized topic within a field that uses the acronym "IR2010STRPBF." Since the code is not standard or widely recognized, the content could be related to a particular academic syllabus, research study, or specialized training program.
Typically, an "introduction" would cover the foundational aspects, objectives, and scope of the subject. It might outline key theories, methodologies, or areas of focus relevant to the course or subject matter. It could also include an overview of the historical context, significant events, or influential figures related to the topic. Additionally, the introduction might address the practical applications or implications of the subject in current global or local contexts.
Without specific context or additional details, it's challenging to provide an accurate summary or overview of IR2010STRPBF. For precise information, consulting the relevant academic or organizational materials where this term is used would be beneficial.

Features

The IR2010STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed by Infineon Technologies. Here are its key features:
1. High-Side and Low-Side Driver: It provides independent high-side and low-side referenced output channels, which makes it suitable for driving a variety of power MOSFETs and IGBTs.
2. Floating Channel: The driver can accommodate high-side floating channels up to 200V, offering flexibility in application design.
3. Latch Immune CMOS Technology: Built with robust CMOS technology, it ensures latch immunity and noise robustness.
4. Undervoltage Lockout: Both high-side and low-side have undervoltage lockout protection to ensure stable operation.
5. 3.3V, 5V, and 15V Logic Compatible: Its input logic is compatible with standard 3.3V, 5V, and 15V logic levels.
6. Gate Drive Capability: Capable of delivering up to 2A of peak output current, it efficiently drives large MOSFETs and IGBTs.
7. Propagation Delay: Features matched propagation delay for high-side and low-side, ensuring synchronized switching.
8. Compact Package: Available in a compact SOIC-8 package, making it suitable for space-constrained applications.
These features make the IR2010STRPBF ideal for applications in motor control, power supplies, and other high-voltage applications.

Package

The package type "IR2010STRPBF" refers to a specific model of MOSFET manufactured by Infineon Technologies (previously by International Rectifier). The "PBF" suffix indicates a lead-free, environmentally friendly package. The package type is typically "D-Pak" or "TO-252," which is a surface-mounted package designed for efficient thermal performance and compact size in electronic circuits.

Pinout

The IR2010STRPBF is a high-speed power MOSFET and IGBT driver. It typically comes in an 8-pin configuration, specifically in a surface-mount SOIC-8 package. The primary function of this device is to drive the gates of high-side and low-side power MOSFETs or IGBTs in half-bridge configurations, making it suitable for applications such as motor drives, power supplies, and DC-DC converters.
Here's a brief overview of its pin functions:
1. VCC: Supply voltage for the logic and gate drive sections.
2. HIN: Logic input for high-side gate driver.
3. LIN: Logic input for low-side gate driver.
4. COM: Common ground reference for the low-side circuitry.
5. LO: Output to the gate of the low-side MOSFET/IGBT.
6. VS: High-side floating supply return.
7. HO: Output to the gate of the high-side MOSFET/IGBT.
8. VB: High-side floating supply voltage.
The IR2010STRPBF is known for its fast switching capabilities and robust design, making it effective for driving high-power transistors in various electronic applications.

Manufacturer

The IR2010STRPBF is manufactured by Infineon Technologies. Infineon is a global semiconductor manufacturer that develops and produces a wide range of semiconductor solutions, including microcontrollers, security controllers, sensors, power management ICs, and more. Headquartered in Neubiberg, Germany, Infineon serves various industries such as automotive, industrial, consumer electronics, and security. The company is known for its focus on energy efficiency, mobility, and security in its product offerings.

Application

The IR2010STRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. It is often utilized in areas such as DC-DC converters, synchronous rectification, motor drive control, and load switching. Its ability to handle high current and voltage makes it suitable for use in automotive, industrial, and consumer electronics applications where efficient power management is crucial.

Equivalent

The IR2010STRPBF is a high-speed power MOSFET and IGBT driver. Equivalent products include the UCC27201A from Texas Instruments, the FAN7392 from On Semiconductor, and the MCP14E11 from Microchip Technology. Ensure compatibility by checking the specific electrical and performance characteristics, as well as the pin configuration, before selecting a replacement.

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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

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