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IPW60R070CFD7
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- Mfr。パート #IPW60R070CFD7
- パッケージ
- データシート IPW60R070CFD7 DataSheet
- 在庫中3448
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仕様
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
概要
Description
The IPW60R070CFD7 is a high-performance N-channel power MOSFET from Infineon Technologies, designed for applications requiring efficient power management. It features a voltage rating of 600V and a continuous drain current of up to 60A, making it suitable for use in power supplies, motor drives, and other high-voltage circuits.
This MOSFET boasts a low RDS(on) rating of 0.070 ohms, which helps minimize conduction losses and improve overall efficiency in switching applications. The device is optimized for fast switching speeds, allowing for better performance in high-frequency applications.
Additionally, the IPW60R070CFD7 is housed in a TO-247 package, which provides excellent thermal performance, facilitating easier heat dissipation during operation. Its robust design and reliable performance make it a popular choice among engineers for designing efficient, high-power systems.
This MOSFET boasts a low RDS(on) rating of 0.070 ohms, which helps minimize conduction losses and improve overall efficiency in switching applications. The device is optimized for fast switching speeds, allowing for better performance in high-frequency applications.
Additionally, the IPW60R070CFD7 is housed in a TO-247 package, which provides excellent thermal performance, facilitating easier heat dissipation during operation. Its robust design and reliable performance make it a popular choice among engineers for designing efficient, high-power systems.
Features
The IPW60R070CFD7 is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (Id) of up to 60A, offering good power handling capabilities.
3. Rds(on): It boasts a low on-resistance (Rds(on)) of approximately 0.070 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (Vgs(th)) range of 2-4V, facilitating compatibility with various gate drive circuits.
5. Fast Switching Speed: The device is optimized for fast switching, which is advantageous in applications like switch-mode power supplies and converters.
6. Package: Available in a TO-247 package, providing robust thermal performance and ease of mounting.
These attributes make the IPW60R070CFD7 ideal for applications in power electronics, such as industrial equipment, renewable energy systems, and automotive power management.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (Id) of up to 60A, offering good power handling capabilities.
3. Rds(on): It boasts a low on-resistance (Rds(on)) of approximately 0.070 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (Vgs(th)) range of 2-4V, facilitating compatibility with various gate drive circuits.
5. Fast Switching Speed: The device is optimized for fast switching, which is advantageous in applications like switch-mode power supplies and converters.
6. Package: Available in a TO-247 package, providing robust thermal performance and ease of mounting.
These attributes make the IPW60R070CFD7 ideal for applications in power electronics, such as industrial equipment, renewable energy systems, and automotive power management.
Package
The IPW60R070CFD7 is packaged in a TO-247 format, which is a type of through-hole package commonly used for power devices. This design allows for efficient heat dissipation, making it suitable for high-power applications.
Pinout
The IPW60R070CFD7 is an N-channel MOSFET from Infineon, specifically designed for high-efficiency applications. It features a pin count of 3, which are typically designated as follows:
1. Gate (G): Controls the switching of the MOSFET, allowing or blocking current flow from the drain to the source.
2. Drain (D): The terminal through which the current enters when the MOSFET is in the on-state.
3. Source (S): The terminal through which the current exits when the MOSFET is conducting.
This MOSFET is optimized for high voltage and high current applications, with a maximum drain-source voltage (V_DS) of 600 V and a continuous drain current (I_D) of up to 60 A. Its low on-resistance (R_DS(on)) and excellent thermal performance make it suitable for use in power supplies, motor drives, and other power conversion applications.
1. Gate (G): Controls the switching of the MOSFET, allowing or blocking current flow from the drain to the source.
2. Drain (D): The terminal through which the current enters when the MOSFET is in the on-state.
3. Source (S): The terminal through which the current exits when the MOSFET is conducting.
This MOSFET is optimized for high voltage and high current applications, with a maximum drain-source voltage (V_DS) of 600 V and a continuous drain current (I_D) of up to 60 A. Its low on-resistance (R_DS(on)) and excellent thermal performance make it suitable for use in power supplies, motor drives, and other power conversion applications.
Manufacturer
The IPW60R070CFD7 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Munich, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensor technologies. The company serves various sectors such as automotive, industrial electronics, and consumer electronics. Infineon is known for its commitment to innovation and sustainability, focusing on energy-efficient solutions and advanced technologies. The IPW60R070CFD7 is a specific model of a power MOSFET, often used in applications requiring efficient power management.
Application
The IPW60R070CFD7 is an N-channel MOSFET designed for high-performance applications, particularly in power management systems. Its primary application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient energy conversion.
2. Motor Control: Employed in driving electric motors in industrial and automotive applications.
3. Audio Amplifiers: Utilized in high-fidelity audio equipment for improved efficiency.
4. DC-DC Converters: Applied in renewable energy systems and battery management.
Its high voltage and current ratings make it suitable for demanding applications.
1. Switching Power Supplies: Used in converters and inverters for efficient energy conversion.
2. Motor Control: Employed in driving electric motors in industrial and automotive applications.
3. Audio Amplifiers: Utilized in high-fidelity audio equipment for improved efficiency.
4. DC-DC Converters: Applied in renewable energy systems and battery management.
Its high voltage and current ratings make it suitable for demanding applications.
Equivalent
The IPW60R070CFD7 is an N-channel MOSFET typically used in power applications. Equivalent products include the STP60NF06, FQP60N06, and BUK7Y2R5-60. However, always check datasheets for specific parameters like V_DS, I_D, R_DS(on), and gate thresholds to ensure compatibility for your application.
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