画像は参照用のみです。
IPT60R050G7
MOSFETs HIGH POWER_NEW
- メーカー
- Mfr。パート #IPT60R050G7
- パッケージ
- データシート IPT60R050G7 DataSheet
- 在庫中26495
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | Reel |
概要
Description
The IPT60R050G7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications. It features a voltage rating of 600V and a current rating of 60A, making it suitable for medium to high power applications such as motor drives, inverters, and power supplies. The "G7" in its designation indicates that it belongs to the seventh generation of IGBT technology, which provides improved switching performance and efficiency.
This IGBT is characterized by low conduction losses and high-speed switching capabilities, allowing for enhanced thermal management and reduced system size. It is typically housed in a compact package that facilitates easy integration into various circuits. Additionally, the IPT60R050G7 is designed to operate under harsh conditions, making it suitable for industrial and automotive applications.
Overall, the IPT60R050G7 is a reliable choice for engineers seeking to optimize performance in power conversion systems while maintaining efficiency and thermal stability.
This IGBT is characterized by low conduction losses and high-speed switching capabilities, allowing for enhanced thermal management and reduced system size. It is typically housed in a compact package that facilitates easy integration into various circuits. Additionally, the IPT60R050G7 is designed to operate under harsh conditions, making it suitable for industrial and automotive applications.
Overall, the IPT60R050G7 is a reliable choice for engineers seeking to optimize performance in power conversion systems while maintaining efficiency and thermal stability.
Features
The IPT60R050G7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: 600V, suitable for medium-voltage applications.
2. Current Rating: 60A, enabling efficient operation in demanding environments.
3. Low On-State Voltage: Provides reduced conduction losses, enhancing efficiency.
4. Fast Switching: Optimized for quick turn-on and turn-off characteristics, improving overall performance in switching applications.
5. Thermal Stability: Designed for high-temperature operation, ensuring reliability under varying thermal conditions.
6. Rugged Design: Built to withstand high levels of voltage and current, making it suitable for industrial and automotive applications.
7. Package Type: Available in TO-247 and other configurations for easy integration into power circuits.
These features make the IPT60R050G7 an excellent choice for applications such as motor drives, power supplies, and renewable energy systems.
1. Voltage Rating: 600V, suitable for medium-voltage applications.
2. Current Rating: 60A, enabling efficient operation in demanding environments.
3. Low On-State Voltage: Provides reduced conduction losses, enhancing efficiency.
4. Fast Switching: Optimized for quick turn-on and turn-off characteristics, improving overall performance in switching applications.
5. Thermal Stability: Designed for high-temperature operation, ensuring reliability under varying thermal conditions.
6. Rugged Design: Built to withstand high levels of voltage and current, making it suitable for industrial and automotive applications.
7. Package Type: Available in TO-247 and other configurations for easy integration into power circuits.
These features make the IPT60R050G7 an excellent choice for applications such as motor drives, power supplies, and renewable energy systems.
Package
The IPT60R050G7 is packaged in a TO-247 package type, which is a type of power semiconductor package designed for high-power applications, providing good thermal performance and ease of mounting.
Pinout
The IPT60R050G7 is an N-channel MOSFET produced by Infineon Technologies. It comes in a TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET and is where the voltage is applied to turn the device on or off.
2. Drain (D): The drain pin is where the main current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the circuit, allowing current to flow into the device.
The IPT60R050G7 has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for high-voltage applications in power electronics.
1. Gate (G): This pin is used to control the MOSFET and is where the voltage is applied to turn the device on or off.
2. Drain (D): The drain pin is where the main current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the circuit, allowing current to flow into the device.
The IPT60R050G7 has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for high-voltage applications in power electronics.
Manufacturer
The IPT60R050G7 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductor and system solutions that are essential for various electronic applications, including automotive, industrial, and power management. The company focuses on areas such as power semiconductors, microcontrollers, and sensor technologies. Infineon plays a significant role in the development of energy-efficient solutions and is recognized for its innovations in the field of power electronics.
Application
The IPT60R050G7 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Its application areas include industrial motor drives, renewable energy systems (like solar inverters), uninterruptible power supplies (UPS), welding equipment, and power conversion systems. It is valued for its efficiency in handling high voltages and currents, making it suitable for various energy management and conversion tasks.
Equivalent
Equivalent products to the IPT60R050G7 chip, a 600V IGBT, include the following:
1. IRG4PH50KD
2. FGA25N60
3. MGSF50-12
4. STGW30H60
5. IXGH50N60
Always check the specific datasheets for exact specifications and compatibility.
1. IRG4PH50KD
2. FGA25N60
3. MGSF50-12
4. STGW30H60
5. IXGH50N60
Always check the specific datasheets for exact specifications and compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FZBI-08Q
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25V1635FM2I
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix
-
MX29LV160DTTI-70G
Macronix
-
MX29F040CTI-70G
Macronix
-
MX25L1006EMI-10G
Macronix