IPT111N20NFD

画像は参照用のみです。

IPT111N20NFD

MOSFETs TRENCH >=100V

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Packaging Reel

概要

Description

IPT111N20NFD refers to a specific course or module, likely related to a field such as information technology or programming. Typically, an introductory course like this would cover fundamental concepts, terminology, and skills necessary for understanding the subject matter. Students may learn about basic programming languages, data structures, algorithms, or software development principles, depending on the focus of the course.
The course might also emphasize critical thinking and problem-solving skills, encouraging students to engage in hands-on projects or labs to apply their knowledge practically. Overall, IPT111N20NFD is designed to equip newcomers with the foundational skills and understanding required for further study or careers in the tech industry. For specific topics, structure, and prerequisites, one would need to refer to the course syllabus or institutional guidelines.

Features

The IPT111N20NFD is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 111A, which allows for efficient power management in various circuits.
3. R_DS(on): The on-resistance is low (typically around 0.0045 ohms), leading to reduced power losses and improved thermal performance during operation.
4. Gate Threshold Voltage: It has a gate-to-source threshold voltage (V_GS(th)) of 2 to 4V, enabling easy driving with standard logic levels.
5. Package Type: The device comes in a TO-220 package, which supports effective heat dissipation.
6. Fast Switching: Designed for efficient high-speed switching applications, enhancing performance in power electronics.
These characteristics make the IPT111N20NFD suitable for use in power supplies, motor control, and other applications requiring reliable performance under load.

Package

The IPT111N20NFD is housed in a TO-247 package type, which is a sturdy, high-power package designed for efficient thermal management and is commonly used in power electronics applications.

Pinout

The IPT111N20NFD is an N-channel MOSFET designed for use in various power applications. It typically has a total of 4 pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's on/off state. Applying a voltage here allows current to flow from drain to source.
2. Drain (D) - This pin is where the current enters the MOSFET from the power source.
3. Source (S) - This pin is where the current exits the MOSFET to the load.
4. Body Diode - Internally, there’s a body diode that provides reverse current protection.
The IPT111N20NFD is designed for high efficiency and fast switching applications, making it suitable for use in power supplies, motor drives, and other electronic circuits. It features a low on-resistance, enhancing its performance in power management tasks.

Manufacturer

The IPT111N20NFD is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and power management. The company focuses on energy efficiency, mobility, and security, developing products such as power semiconductors, microcontrollers, and sensors that are crucial for modern electronic systems. Infineon is known for its innovation in power electronics and is a key player in the global semiconductor market.

Application

The IPT111N20NFD is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-efficiency power applications. Its main application areas include industrial motor drives, renewable energy systems (like solar inverters), and power supply units. Additionally, it can be found in automotive applications, such as electric and hybrid vehicles, due to its capability to handle high voltages and currents efficiently.

Equivalent

The IPT111N20NFD is a 20V N-channel MOSFET. Equivalent products include:
1. STP20NM60 - 20V, 60A
2. IRF3205 - 55V, 110A
3. BSS138 - 30V, 0.22A (lower current)
4. AO3400 - 30V, 5.8A
Always verify specifications (Vds, Id, Rds(on)) for your specific application.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100%前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送