IPP65R095C7

The IPP65R095C7 is an N-channel MOSFET designed for high-efficiency power management applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 95A, making it suitable for use in a variety of power conversion systems, including switch-mode power supplies and industrial applications.
This MOSFET boasts a low on-resistance (R_DS(on)) of approximately 0.095 ohms, which minimizes power loss during operation, enhancing overall efficiency. It also has a fast switching speed, which helps reduce switching losses in high-frequency applications.
The device is housed in a TO-220 package, facilitating effective thermal management due to its good heat dissipation capabilities. The IPP65R095C7 is ideal for applications requiring robust performance under demanding conditions, such as renewable energy systems, motor drives, and DC-DC converters.
Overall, the IPP65R095C7 is a reliable choice for engineers seeking a high-performance MOSFET for their power electronic designs.

The IPP65R095C7 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. RDS(on): The on-resistance is low at 0.095 Ohms, which helps reduce conduction losses and improve overall efficiency.
3. Continuous Drain Current: It can handle a continuous drain current of up to 14A, providing flexibility in various power applications.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (Vgs(th)) is typically between 2V and 4V, allowing for easy interfacing with standard logic levels.
5. Fast Switching: Designed for quick switching, it minimizes transition losses, making it ideal for applications like power supplies and converters.
6. Package Type: Often available in a TO-220 or similar package, facilitating effective heat dissipation.
Overall, the IPP65R095C7 is optimized for efficiency in high-voltage and high-current applications, making it a popular choice in power electronics.

The IPP65R095C7 is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and allowing for easy mounting to heat sinks.

The IPP65R095C7 is an N-channel MOSFET from Infineon Technologies, specifically designed for power applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is on.
3. Source (S) - The terminal connected to ground or the low potential side of the circuit.
The device is characterized by its low on-resistance and high current handling capability, making it suitable for applications such as DC-DC converters, motor drives, and other power management solutions. It operates with a maximum drain-source voltage (V_DS) of 65V and continuous drain current (I_D) up to 95A. The specific package type (usually DPAK or TO-220) also influences thermal performance and mounting options.

The IPP65R095C7 is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon is known for its focus on automotive, industrial power control, and security solutions. The company develops a wide range of products, including power semiconductors, microcontrollers, and sensors, which are essential for various applications in automotive, industrial, and consumer electronics sectors. Infineon is recognized for its innovation in power management technologies, including IGBTs and MOSFETs, like the IPP65R095C7, which is a N-channel MOSFET designed for high-efficiency applications.

The IPP65R095C7 is a N-channel MOSFET primarily used in applications such as power supplies, motor control, and industrial automation. Its high voltage and current handling capabilities make it suitable for switch-mode power supplies (SMPS), DC-DC converters, and inverters. Additionally, it is ideal for electric vehicles, renewable energy systems, and other high-efficiency power management applications.

The IPP65R095C7 is a N-channel MOSFET with a 95V rating and a 65A current capacity. Equivalent products include the IRF3205, AOD2956, and STP65NF95. Ensure to check the specifications for gate threshold voltage, RDS(on), and package type to ensure compatibility for your specific application.