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IPP60R099C6

Name: IPP60R099C6
Rating: 4.7 (12 reviews)

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Mfr。パート #IPP60R099C6
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仕様

Technology	Si
Packaging	Tube
Brand	Infineon Technologies
Product Type	MOSFETs
Series	CoolMOS C6
Factory Pack Quantity:Factory Pack Quantity	500
Subcategory	Transistors
Part # Aliases	IPP6R99C6XK SP000687556 IPP60R099C6XKSA1
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	15.65 mm
Length	10 mm
Width	4.4 mm
Unit Weight	0.068784 oz
Package / Case	TO-220-3
Configuration	Single
Tradename	CoolMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	37.9 A
Rds On - Drain-Source Resistance	90 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	119 nC
Pd - Power Dissipation	278 W
Channel Mode	Enhancement
Fall Time	6 ns
Rise Time	12 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	75 ns
Typical Turn-On Delay Time	15 ns

概要

Description

IPP60R099C6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching circuits. It is manufactured by Infineon Technologies and features a low on-resistance, which allows for efficient power conversion and reduced heat generation.
With a maximum continuous drain current of 60A and a maximum drain-source voltage of 60V, the IPP60R099C6 is suitable for high-efficiency applications in automotive, industrial, and consumer electronics. The device's fast switching speeds make it ideal for use in DC-DC converters, motor drives, and other power control circuits.
The MOSFET is housed in a TO-220 package, providing good thermal performance and ease of mounting. Its low gate threshold voltage enhances its versatility in various driving conditions. Overall, the IPP60R099C6 is a reliable choice for engineers seeking efficient power solutions in demanding applications.

Features

The IPP60R099C6 is an N-channel MOSFET from Infineon, designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. R_DS(on): The on-resistance is low, typically around 0.099 ohms, which enhances efficiency and reduces power losses during operation.
3. Current Rating: It can handle a continuous drain current of up to 60A, making it suitable for demanding loads.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, ensuring compatibility with typical gate drive voltages.
5. Package Type: It is available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: The device is optimized for fast switching applications, making it ideal for power converters, inverters, and motor drives.
Overall, the IPP60R099C6 is designed for efficiency and robustness in power electronics applications.

Package

The IPP60R099C6 is packaged in a TO-247 form factor, which is designed for high-power applications, providing efficient thermal management and electrical performance.

Pinout

The IPP60R099C6 is an N-channel MOSFET with a total of 5 pins. Its pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal where the current flows out; connected to the load.
3. Source (S): The terminal where the current flows in; typically connected to ground in an N-channel configuration.
4. Tab / Heat Sink: Used for heat dissipation, typically connected to the source.
The IPP60R099C6 is designed for high efficiency and low on-resistance, making it suitable for applications such as power management and switching. It can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 60A. The device is often utilized in automotive, industrial, and consumer electronics applications.

Manufacturer

The IPP60R099C6 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing innovative semiconductor and system solutions for various sectors, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, and sensors, focusing on energy efficiency, connectivity, and security. Infineon plays a significant role in advancing technologies such as electric mobility, IoT, and renewable energy systems.

Application

The IPP60R099C6 is an N-channel power MOSFET used in various applications, including DC-DC converters, motor drives, and power management systems. Its low on-resistance and high-speed switching make it suitable for high-efficiency power supplies, electric vehicles, and renewable energy systems. Additionally, it can be utilized in audio amplifiers and industrial applications for energy conversion and control.

Equivalent

The IPP60R099C6 is an N-channel MOSFET from Infineon, primarily used in power applications. Equivalent products include the IRF540, STP60NF06L, and BUK7YB60-55. Always verify specifications such as voltage, current ratings, and RDS(on) before substitution, as they may vary.