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IPP60R070CFD7
MOSFETs HIGH POWER_NEW
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- Mfr。パート #IPP60R070CFD7
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- データシート IPP60R070CFD7 DataSheet
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仕様
| Packaging | Tube |
概要
Description
The IPP60R070CFD7 is a high-performance N-channel MOSFET designed for power management applications. It is part of the Infineon Technologies’ family of power semiconductors, particularly known for its efficiency and low on-resistance, making it suitable for use in various power conversion applications such as DC-DC converters, motor drives, and power supplies.
Key features of the IPP60R070CFD7 include a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 60A, which allows it to handle significant power loads. Its low gate threshold voltage and fast switching capabilities contribute to reduced energy losses during operation. The device is packaged in a DPAK or TO-220 format, facilitating easy integration into circuit designs.
Overall, the IPP60R070CFD7 is a reliable choice for engineers looking to optimize efficiency in high-voltage, high-current applications.
Key features of the IPP60R070CFD7 include a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 60A, which allows it to handle significant power loads. Its low gate threshold voltage and fast switching capabilities contribute to reduced energy losses during operation. The device is packaged in a DPAK or TO-220 format, facilitating easy integration into circuit designs.
Overall, the IPP60R070CFD7 is a reliable choice for engineers looking to optimize efficiency in high-voltage, high-current applications.
Features
The IPP60R070CFD7 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 60A, making it ideal for power management.
3. R_DS(on): The on-resistance is low (typically around 0.070 ohms), which helps minimize conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 2V and 4V, allowing for easy driving.
5. Fast Switching: The device features fast switching characteristics, enhancing efficiency in high-frequency applications.
6. Thermal Performance: It has a maximum junction temperature of 175°C, supporting operation in demanding environments.
7. Package Type: It is available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
These attributes make the IPP60R070CFD7 suitable for use in power supplies, motor drives, and other applications requiring efficient power conversion.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 60A, making it ideal for power management.
3. R_DS(on): The on-resistance is low (typically around 0.070 ohms), which helps minimize conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 2V and 4V, allowing for easy driving.
5. Fast Switching: The device features fast switching characteristics, enhancing efficiency in high-frequency applications.
6. Thermal Performance: It has a maximum junction temperature of 175°C, supporting operation in demanding environments.
7. Package Type: It is available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
These attributes make the IPP60R070CFD7 suitable for use in power supplies, motor drives, and other applications requiring efficient power conversion.
Package
The IPP60R070CFD7 is packaged in a TO-247 housing type, which is commonly used for high-power applications. This package provides efficient heat dissipation and is suitable for various industrial and automotive applications.
Pinout
The IPP60R070CFD7 is an N-channel MOSFET from Infineon, designed for high-performance applications. It features a TO-247 package, which typically has three pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output connection where the load is connected. Current flows from the drain to the source when the device is turned on.
3. Source (S): This pin is the input connection to the ground or the lower potential side of the circuit.
The IPP60R070CFD7 has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for various high-voltage applications.
1. Gate (G): This pin controls the MOSFET's on/off state. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output connection where the load is connected. Current flows from the drain to the source when the device is turned on.
3. Source (S): This pin is the input connection to the ground or the lower potential side of the circuit.
The IPP60R070CFD7 has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for various high-voltage applications.
Manufacturer
The manufacturer of the IPP60R070CFD7 is Infineon Technologies. Infineon is a global semiconductor manufacturer based in Germany, specializing in advanced semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, contributing to energy efficiency and advanced connectivity in electronic systems. Infineon plays a significant role in the semiconductor industry, focusing on areas such as power management, security, and IoT technologies.
Application
The IPP60R070CFD7 is an N-channel MOSFET primarily used in power management applications. Its low on-resistance and high-speed switching capabilities make it suitable for use in DC-DC converters, power supplies, motor drives, and automotive applications. Additionally, it can be employed in industrial automation and renewable energy systems, such as solar inverters and battery management systems.
Equivalent
The IPP60R070CFD7 is a N-channel MOSFET from Infineon. Equivalent products include the IRF620, STP60NF06, and BSC060N06LS. Ensure to check specifications like Vds, Id, Rds(on), and package type for compatibility. Always verify with the manufacturer's datasheet for precise matching.
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