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IPP320N20N3G
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- Mfr。パート #IPP320N20N3G
- パッケージ
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- 在庫中6261
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仕様
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Process Technology | OptiMOS |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 34 |
| Maximum Drain Source Resistance (MOhm) | 32@10V |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Input Capacitance @ Vds (pF) | 1770@100V |
| Maximum Power Dissipation (mW) | 136000 |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Typical Turn-On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Mounting | Through Hole |
| Package Height | 9.25 |
| Package Width | 4.4 |
| Package Length | 10 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Tab | Tab |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Gate to Drain Charge (nC) | 3 |
| Typical Gate to Source Charge (nC) | 8 |
| Typical Reverse Recovery Charge (nC) | 500 |
| Typical Switch Charge (nC) | 5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 4@100V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (pF) | 135 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 136 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Reverse Recovery Time (ns) | 110 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate Threshold Voltage (V) | 3 |
| Maximum Positive Gate Source Voltage (V) | 20 |
概要
Description
The IPP320N20N3G is a high-performance N-channel power MOSFET designed for use in various applications, including industrial and automotive sectors. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 320A, making it suitable for high-voltage and high-current applications.
This MOSFET is built using advanced Trench technology, which enhances its efficiency and reduces conduction losses. It also has a low gate threshold voltage, allowing for easy interfacing with logic-level control signals. The IPP320N20N3G offers low on-resistance (RDS(on)), which contributes to improved thermal performance and energy efficiency in power conversion systems.
Key specifications include fast switching capabilities, robust thermal stability, and high reliability, making it ideal for use in power supplies, motor drives, and inverters. Overall, the IPP320N20N3G is a versatile component that helps optimize the performance of power electronic systems.
This MOSFET is built using advanced Trench technology, which enhances its efficiency and reduces conduction losses. It also has a low gate threshold voltage, allowing for easy interfacing with logic-level control signals. The IPP320N20N3G offers low on-resistance (RDS(on)), which contributes to improved thermal performance and energy efficiency in power conversion systems.
Key specifications include fast switching capabilities, robust thermal stability, and high reliability, making it ideal for use in power supplies, motor drives, and inverters. Overall, the IPP320N20N3G is a versatile component that helps optimize the performance of power electronic systems.
Features
The IPP320N20N3G is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (ID) is up to 320A, allowing it to handle significant power loads.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 0.025 ohms, minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling efficient drive characteristics.
5. Thermal Performance: With a high maximum junction temperature (TJ), it can operate in demanding conditions.
6. Package Type: It is available in a TO-220 package, providing good thermal dissipation.
These features make the IPP320N20N3G ideal for applications such as power supplies, motor drives, and other high-frequency switching applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (ID) is up to 320A, allowing it to handle significant power loads.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 0.025 ohms, minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling efficient drive characteristics.
5. Thermal Performance: With a high maximum junction temperature (TJ), it can operate in demanding conditions.
6. Package Type: It is available in a TO-220 package, providing good thermal dissipation.
These features make the IPP320N20N3G ideal for applications such as power supplies, motor drives, and other high-frequency switching applications.
Package
The IPP320N20N3G is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and easy mounting, making it suitable for power applications.
Pinout
The IPP320N20N3G is a N-channel MOSFET from Infineon Technologies, typically housed in a TO-220 package. It features a total of three pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. The drain is connected to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or a lower voltage point in the circuit.
This device is suitable for various applications, including power management and switching due to its low on-resistance and high current handling capability.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. The drain is connected to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or a lower voltage point in the circuit.
This device is suitable for various applications, including power management and switching due to its low on-resistance and high current handling capability.
Manufacturer
The IPP320N20N3G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security technologies. The company is known for its innovative products that cater to various industries such as automotive, industrial, communication, and consumer electronics. Infineon focuses on enhancing energy efficiency and sustainability through its advanced semiconductor technologies.
Application
The IPP320N20N3G is an N-channel MOSFET primarily used in power management applications. Its application areas include industrial motor drives, power supplies, automotive electronics, and renewable energy systems. It is suitable for high-efficiency switching, DC-DC converters, and inverters, effectively handling high voltages and currents for improved performance in various electronic devices.
Equivalent
The IPP320N20N3G is an N-channel MOSFET from Infineon. Equivalent products include the STP320N20, FQP30N20, and IRF320. For precise application requirements, always check specifications like Vds, Rds(on), and current ratings to ensure compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照（DHL/FedEx）:
DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100％前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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