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IPP075N15N3G
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- Mfr。パート #IPP075N15N3G
- パッケージ
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仕様
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Operating Temperature | -55℃~+175℃ |
| RDS(on) | 7.2mΩ@10V,100A |
| Drain to Source Voltage | 150V |
| Pd - Power Dissipation | 300W |
| Current - Continuous Drain(Id) | 100A |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF@75V |
| Input Capacitance(Ciss@Vds) | 5.47nF@75V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V |
| Gate Charge(Qg) | 93nC@10V |
| Number | 1 N-channel |
概要
Description
The IPP075N15N3G is a high-performance N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching. This component is part of Infineon's CoolMOS series, known for its efficiency and reduced power losses, making it suitable for high-frequency operations and energy-efficient designs.
Key specifications include a maximum drain-source voltage (V_DS) of 150 volts and a continuous drain current (I_D) rated at 75 amps. Its low on-resistance (R_DS(on)) ensures minimal conduction losses, enhancing overall system efficiency. The IPP075N15N3G is also characterized by fast switching capabilities, which help improve the performance of power converters and inverters.
Common applications include power supplies, motor drives, and renewable energy systems, where high efficiency and reliability are critical. Overall, the IPP075N15N3G is an ideal choice for engineers seeking robust solutions in power electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 150 volts and a continuous drain current (I_D) rated at 75 amps. Its low on-resistance (R_DS(on)) ensures minimal conduction losses, enhancing overall system efficiency. The IPP075N15N3G is also characterized by fast switching capabilities, which help improve the performance of power converters and inverters.
Common applications include power supplies, motor drives, and renewable energy systems, where high efficiency and reliability are critical. Overall, the IPP075N15N3G is an ideal choice for engineers seeking robust solutions in power electronics.
Features
The IPP075N15N3G is an N-channel MOSFET from Infineon Technologies designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of 75A, allowing it to drive heavy loads effectively.
3. Low On-Resistance: The device features a low R_DS(on) of around 0.075 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET supports fast switching speeds, beneficial for high-frequency applications and reducing switching losses.
5. Thermal Performance: It has good thermal characteristics, with a high junction temperature rating, supporting reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, it ensures good thermal dissipation and ease of mounting.
Overall, the IPP075N15N3G is ideal for use in power management, motor control, and other high-performance electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of 75A, allowing it to drive heavy loads effectively.
3. Low On-Resistance: The device features a low R_DS(on) of around 0.075 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET supports fast switching speeds, beneficial for high-frequency applications and reducing switching losses.
5. Thermal Performance: It has good thermal characteristics, with a high junction temperature rating, supporting reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, it ensures good thermal dissipation and ease of mounting.
Overall, the IPP075N15N3G is ideal for use in power management, motor control, and other high-performance electronic applications.
Package
The IPP075N15N3G is packaged in a TO-220 format. This type of package is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on heatsinks.
Pinout
The IPP075N15N3G is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency applications. It features a total of three pins.
1. Gate (G): This pin controls the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is connected to the load. Current flows through the MOSFET from drain to source when it is turned on.
3. Source (S): This pin is typically connected to ground in low-side switching applications, providing a return path for the current flowing through the device.
The IPP075N15N3G is recognized for its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including power management and motor drives.
1. Gate (G): This pin controls the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is connected to the load. Current flows through the MOSFET from drain to source when it is turned on.
3. Source (S): This pin is typically connected to ground in low-side switching applications, providing a return path for the current flowing through the device.
The IPP075N15N3G is recognized for its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including power management and motor drives.
Manufacturer
The IPP075N15N3G is manufactured by Infineon Technologies AG, a prominent global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon focuses on developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security ICs. The company serves various industries, such as automotive, industrial, consumer electronics, and communication. Infineon's products are known for their efficiency and reliability, particularly in power management applications.
Application
The IPP075N15N3G is an N-channel MOSFET primarily used in power management applications, such as DC-DC converters, motor control, and power amplification. Its low on-resistance and high-speed switching capabilities make it suitable for use in industrial automation, renewable energy systems, and consumer electronics. Additionally, it can be employed in automotive applications for power distribution and battery management.
Equivalent
The IPP075N15N3G is an N-channel MOSFET with a 75A current rating and a 150V breakdown voltage. Equivalent products include:
1. STP75NF15 (STMicroelectronics)
2. IRF140 (Infineon)
3. FQP75N15 (ON Semiconductor)
4. SI7460DP (Vishay)
Always check datasheets for specific parameters to ensure compatibility in your application.
1. STP75NF15 (STMicroelectronics)
2. IRF140 (Infineon)
3. FQP75N15 (ON Semiconductor)
4. SI7460DP (Vishay)
Always check datasheets for specific parameters to ensure compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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