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IPP030N10N5
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- Mfr。パート #IPP030N10N5
- パッケージ
- データシート IPP030N10N5 DataSheet
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仕様
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
概要
Description
The IPP030N10N5 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a voltage rating of 100V and a continuous drain current capacity of 30A, making it suitable for power management and switching applications in power supplies, motor drives, and automotive systems.
Key characteristics include a low on-resistance (R_DS(on)), which minimizes power loss during operation and enhances efficiency. Its fast switching speeds reduce transition times, making it ideal for high-frequency applications. The device typically comes in a TO-220 or similar package, facilitating easy heat dissipation.
The IPP030N10N5 is also optimized for low gate charge, allowing for simpler drive circuit designs and reduced driver power consumption. Overall, this MOSFET is a reliable choice for engineers seeking robust performance in power electronic circuits.
Key characteristics include a low on-resistance (R_DS(on)), which minimizes power loss during operation and enhances efficiency. Its fast switching speeds reduce transition times, making it ideal for high-frequency applications. The device typically comes in a TO-220 or similar package, facilitating easy heat dissipation.
The IPP030N10N5 is also optimized for low gate charge, allowing for simpler drive circuit designs and reduced driver power consumption. Overall, this MOSFET is a reliable choice for engineers seeking robust performance in power electronic circuits.
Features
The IPP030N10N5 is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 30A, offering robust performance in demanding environments.
3. On-Resistance (R_DS(on)): It features a low on-resistance of approximately 30 mΩ at a gate-source voltage (V_GS) of 10V, which enhances efficiency and reduces power losses.
4. Fast Switching Speed: The MOSFET supports rapid switching, beneficial for applications like DC-DC converters and motor control.
5. Thermal Performance: It is housed in a TO-220 package, allowing efficient heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, ensuring compatibility with low-voltage driving signals.
These characteristics make the IPP030N10N5 suitable for various applications, including automotive, industrial, and consumer electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 30A, offering robust performance in demanding environments.
3. On-Resistance (R_DS(on)): It features a low on-resistance of approximately 30 mΩ at a gate-source voltage (V_GS) of 10V, which enhances efficiency and reduces power losses.
4. Fast Switching Speed: The MOSFET supports rapid switching, beneficial for applications like DC-DC converters and motor control.
5. Thermal Performance: It is housed in a TO-220 package, allowing efficient heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, ensuring compatibility with low-voltage driving signals.
These characteristics make the IPP030N10N5 suitable for various applications, including automotive, industrial, and consumer electronics.
Package
The IPP030N10N5 is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The IPP030N10N5 is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a TO-220 package with three pins.
The pinout and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is in the 'on' state. It's connected to the load side of the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The IPP030N10N5 has a maximum voltage rating of 100V and a continuous drain current of 30A, making it suitable for various applications like power supplies, motor drivers, and other high-power circuits.
The pinout and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is in the 'on' state. It's connected to the load side of the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The IPP030N10N5 has a maximum voltage rating of 100V and a continuous drain current of 30A, making it suitable for various applications like power supplies, motor drivers, and other high-power circuits.
Manufacturer
The IPP030N10N5 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer based in Germany, specializing in various applications such as automotive, industrial power control, and digital security. The company is known for its innovations in power semiconductors, microcontrollers, and sensors. Infineon serves a wide range of markets, including automotive systems, energy efficiency, and Internet of Things (IoT) solutions, making it a key player in the semiconductor industry.
Application
The IPP030N10N5 is a high-performance N-channel MOSFET, commonly used in power management applications such as DC-DC converters, motor drives, and power inverters. Its low on-resistance and fast switching capabilities make it suitable for switching power supplies, battery management systems, and electric vehicles. Additionally, it finds applications in industrial automation and consumer electronics for efficient power control and energy savings.
Equivalent
The IPP030N10N5 is an N-channel MOSFET with a 100V rating and 30A continuous current. Equivalent products include the IRF3205, STP30NF10, and PSMN2R8-100BSF. Other alternatives may also include the BUK7Y3R0-100 and APT30M50B. Always verify specifications such as V_DS, I_D, R_DS(on), and package type for compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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