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IPP023N10N5
MOSFETs N-Ch 100V 120A TO220-3
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- Mfr。パート #IPP023N10N5
- パッケージ
- データシート IPP023N10N5 DataSheet
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仕様
| Packaging | Tube |
| Standard Pack Qty | 500 |
概要
Description
IPP023N10N5 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient power management and switching. It features a low on-resistance (RDS(on)), which minimizes power loss during operation, making it suitable for high-speed switching applications. The part number indicates specific characteristics: "IPP" suggests it is a part from Infineon Technologies, "023" refers to the maximum continuous drain current (approximately 23A), "N" indicates it is an N-channel device, "10" refers to the maximum drain-source voltage (approximately 100V), and "N5" signifies the package type or special features. This MOSFET is commonly used in power supplies, converters, motor drives, and various electronic circuits, offering high efficiency and reliability.
Features
The IPP023N10N5 is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, suitable for various power applications.
2. Current Capacity: The maximum continuous drain current (ID) is 23A, allowing it to handle substantial loads.
3. Low RDS(on): Its low on-resistance (typically around 0.023 ohms) minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching applications, it supports high-frequency operation, beneficial for converters and amplifiers.
5. Thermal Performance: With a maximum junction temperature of 175°C, it ensures reliable performance under high thermal stress.
6. Package: Typically available in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
These features make the IPP023N10N5 suitable for applications in power supplies, motor drives, and energy conversion systems.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, suitable for various power applications.
2. Current Capacity: The maximum continuous drain current (ID) is 23A, allowing it to handle substantial loads.
3. Low RDS(on): Its low on-resistance (typically around 0.023 ohms) minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching applications, it supports high-frequency operation, beneficial for converters and amplifiers.
5. Thermal Performance: With a maximum junction temperature of 175°C, it ensures reliable performance under high thermal stress.
6. Package: Typically available in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
These features make the IPP023N10N5 suitable for applications in power supplies, motor drives, and energy conversion systems.
Package
The IPP023N10N5 is typically housed in a TO-220 package type. This package provides good thermal performance and is commonly used for power MOSFETs, allowing for efficient heat dissipation during operation.
Pinout
The IPP023N10N5 is an N-channel MOSFET designed for power applications. It comes in a TO-220 package and typically has three pins.
1. Gate (G) - Controls the MOSFET's switching behavior.
2. Drain (D) - The terminal through which the load is connected and where current flows out of the device when it is turned on.
3. Source (S) - The terminal from which current enters the device when it is turned on.
This MOSFET is rated for high voltage and current handling, making it suitable for applications such as power supply, motor drives, and other power management systems. The pin configuration ensures easy integration into circuits while providing efficient performance.
1. Gate (G) - Controls the MOSFET's switching behavior.
2. Drain (D) - The terminal through which the load is connected and where current flows out of the device when it is turned on.
3. Source (S) - The terminal from which current enters the device when it is turned on.
This MOSFET is rated for high voltage and current handling, making it suitable for applications such as power supply, motor drives, and other power management systems. The pin configuration ensures easy integration into circuits while providing efficient performance.
Manufacturer
The IPP023N10N5 is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and consumer electronics applications. The company is recognized for its innovation in power management, enabling efficient energy usage in various electronic devices. Infineon is a key player in the semiconductor industry, focusing on technologies that enhance connectivity, efficiency, and security in modern applications.
Application
The IPP023N10N5 is an N-channel MOSFET primarily used in power electronics applications. Its key areas include automotive systems, power supplies, motor drives, and DC-DC converters. It is suitable for high-efficiency switching applications, such as inverters and renewable energy systems, due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in industrial automation and consumer electronics for efficient power management.
Equivalent
Equivalent products to the IPP023N10N5 MOSFET include the BSC012N10NS, STP10NK60Z, and FQP30N10. Always verify specifications like voltage, current ratings, and RDS(on) values to ensure compatibility for your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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