IPN60R600P7S

画像は参照用のみです。

IPN60R600P7S

MOSFETs CONSUMER

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Packaging Reel

概要

Description

The IPN60R600P7S is a high-performance, N-channel power MOSFET manufactured by Infineon Technologies. Designed for high-voltage applications, it features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 60A at a specified temperature. The device is optimized for efficiency in power conversion and switching applications, making it suitable for use in power supplies, electric vehicles, and industrial equipment.
Key features include low on-resistance (R_DS(on)), fast switching speeds, and high thermal stability, which contribute to reducing energy losses in various electronic circuits. The IPN60R600P7S is often utilized in applications like DC-DC converters, motor drivers, and other high-voltage switching circuits due to its robust performance and reliability. This MOSFET is packaged in a TO-247 format, facilitating effective thermal management and heat dissipation during operation.

Features

The IPN60R600P7S is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: Continuous drain current of up to 60A, making it capable of handling substantial loads.
3. RDS(on): Low on-resistance (typically around 0.18 ohms), ensuring efficient operation and reduced power losses.
4. Gate Threshold Voltage: Designed for efficient switching with a threshold voltage typically between 2-4V, allowing compatibility with various driver circuits.
5. Fast Switching Speed: Optimized for rapid switching capabilities, reducing switching losses in applications like converters and inverters.
6. Package Type: Available in a TO-247 package, facilitating easy heat dissipation and mounting.
7. Applications: Ideal for use in power supplies, motor drives, and various industrial applications.
Overall, the IPN60R600P7S is engineered for high efficiency and reliability in demanding power electronic circuits.

Package

The IPN60R600P7S is packaged in a TO-247 format. This package type is designed for high power applications, offering excellent thermal performance and ease of mounting.

Pinout

The IPN60R600P7S is an N-channel power MOSFET from Infineon Technologies. It features a total of 5 pins. The pinout and their functions are as follows:
1. Gate (G): Controls the MOSFET's operation, turning it on or off by applying a voltage.
2. Drain (D): The terminal through which the main current flows out when the device is in the on state.
3. Source (S): The terminal where the current enters the MOSFET when it is in the on state.
The device is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 60A. It is suitable for use in applications such as power supplies, motor drives, and inverters, thanks to its low on-resistance and high switching performance.

Manufacturer

The IPN60R600P7S is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon specializes in power semiconductors, microcontrollers, sensors, and other electronic components. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security solutions. Infineon is recognized for its innovation in power management and system efficiency, making it a key player in the semiconductor market.

Application

The IPN60R600P7S is an IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, industrial power supplies, renewable energy systems (like solar inverters), and electric vehicles. Its high voltage and current ratings make it suitable for switching and amplification tasks in power electronics, particularly in applications requiring efficient power conversion and control.

Equivalent

The IPN60R600P7S is an IGBT (Insulated Gate Bipolar Transistor). Equivalent products include the IRG4PH50KD, FGA60N60, and HGTG30N60A4. Always check the specifications, such as voltage ratings, current ratings, and switching speeds, to ensure compatibility for your specific application.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100%前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送