IPL65R195C7

画像は参照用のみです。

IPL65R195C7

  • メーカー
  • Mfr。パート #IPL65R195C7
  • パッケージ
  • データシート
  • 在庫中8751

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 2500
Technology Si
Shipping Restrictions Mouser does not presently sell this product in your region.
REACH - SVHC Details
Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 10.6 A
Rds On - Drain-Source Resistance 380 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 39 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 83 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 8 nS
Height 2.3 mm
Length 6.5 mm
Rise Time 7 nS
Series CoolMOS E6
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 57 nS
Width 6.22 mm
Part # Aliases SP000795278 IPD65R38E6XT IPD65R380E6BTMA1
Unit Weight 0.011640 oz

概要

Description

The IPL65R195C7 is a power transistor, specifically an Insulated Gate Bipolar Transistor (IGBT), designed for high-performance applications in power electronics. It features a collector-emitter voltage rating of 650V and a continuous collector current rating of 195A, making it suitable for demanding applications such as motor drives, industrial inverters, and renewable energy systems.
This IGBT incorporates advanced technologies that enhance efficiency, reduce switching losses, and improve thermal performance. Its robust construction allows for reliable operation under harsh conditions, contributing to the longevity and durability of electronic systems.
Additionally, the IPL65R195C7 typically comes with a low gate threshold voltage, facilitating easier drive requirements. Overall, it is an essential component for engineers and designers seeking to optimize power conversion and control in modern electrical systems.

Features

The IPL65R195C7 is a high-performance insulated gate bipolar transistor (IGBT) designed for various power applications. Key features include:
1. Voltage Rating: It typically has a voltage rating of 650V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle continuous collector currents of around 195A, allowing for robust performance in high-power circuits.
3. Low Switching Losses: Optimized for reduced switching losses, enhancing efficiency in inverter and converter designs.
4. Thermal Performance: It offers excellent thermal stability, enabling reliable operation in extreme conditions.
5. High Gain: Provides high current gain, facilitating easier drive requirements.
6. Fast Switching: Features fast switching capabilities, improving performance in high-frequency applications.
7. Package Type: Typically available in a TO-247 or similar package, supporting effective heat dissipation.
These features make the IPL65R195C7 suitable for applications in renewable energy systems, motor drives, and industrial power supplies.

Package

The IPL65R195C7 is typically available in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting in various electronic circuits.

Pinout

The IPL65R195C7 is an N-channel MOSFET with a pin count of 6. Its key functions include serving as a power switch and offering high efficiency for various applications, such as industrial automation and motor control.
The pins are typically configured as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load; current flows out from here.
3. Source (S) - Connects to ground or the negative side of the supply.
Additional pins may include a tab or thermal pad for heat dissipation, depending on the package type. The device is characterized by its low on-resistance and high voltage rating, making it suitable for power management applications.

Manufacturer

The IPL65R195C7 is manufactured by Infineon Technologies AG, a leading semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor and system solutions for automotive, industrial power control, and digital security applications. The company focuses on developing innovative technologies that enhance energy efficiency, connectivity, and safety in various applications, ranging from smart automotive systems to renewable energy solutions. Infineon plays a significant role in the global semiconductor market, catering to a range of industries including automotive, industrial, and consumer electronics.

Application

The IPL65R195C7 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in applications such as industrial motor drives, renewable energy systems (like solar inverters), power supplies, and electric vehicles. It is suitable for high-efficiency switching, offering low conduction and switching losses, making it ideal for high-power applications in various sectors, including automation, railways, and HVAC systems.

Equivalent

The IPL65R195C7 is an IGBT (Insulated Gate Bipolar Transistor) used in various applications. Equivalent products include the Infineon IGBT modules like the FF150R65KD3 or the FZ150R65KE3, and the Mitsubishi MGF100J65. Always verify specifications like voltage, current rating, and switching speeds for compatibility.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100%前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送