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IPG20N10S4L-22A
MOSFETs MOSFET_(75V 120V(
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- Mfr。パート #IPG20N10S4L-22A
- パッケージ
- データシート IPG20N10S4L-22A DataSheet
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
概要
Description
The IPG20N10S4L-22A is a high-performance power MOSFET designed for applications requiring efficient switching capabilities. It features a voltage rating of 1000V and a continuous current rating of 20A, making it suitable for use in high-voltage power conversion systems, such as inverters, power supplies, and motor drives.
This device is characterized by low on-resistance (RDS(on)), which minimizes conduction losses, and fast switching speeds, enhancing overall system efficiency. The IPG20N10S4L-22A is packaged in a TO-220 format, facilitating effective heat dissipation and ease of mounting.
With its high reliability and robust design, this MOSFET is ideal for industrial applications and consumer electronics where performance and thermal management are critical. Its features make it an excellent choice for engineers looking to optimize power efficiency in their designs.
This device is characterized by low on-resistance (RDS(on)), which minimizes conduction losses, and fast switching speeds, enhancing overall system efficiency. The IPG20N10S4L-22A is packaged in a TO-220 format, facilitating effective heat dissipation and ease of mounting.
With its high reliability and robust design, this MOSFET is ideal for industrial applications and consumer electronics where performance and thermal management are critical. Its features make it an excellent choice for engineers looking to optimize power efficiency in their designs.
Features
The IPG20N10S4L-22A is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various applications in power electronics.
2. Current Rating: The device can handle continuous drain current (I_D) up to 20A, ensuring robust performance in demanding environments.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), which minimizes conduction losses and enhances efficiency during operation, typically around 22mΩ.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like switch-mode power supplies and motor drives.
5. Thermal Management: It features a TO-220 package, which provides good thermal dissipation, allowing for reliable operation at higher power levels.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is optimized for easy interfacing with standard control circuits.
These features make the IPG20N10S4L-22A suitable for a variety of applications, including inverters, converters, and other power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various applications in power electronics.
2. Current Rating: The device can handle continuous drain current (I_D) up to 20A, ensuring robust performance in demanding environments.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), which minimizes conduction losses and enhances efficiency during operation, typically around 22mΩ.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like switch-mode power supplies and motor drives.
5. Thermal Management: It features a TO-220 package, which provides good thermal dissipation, allowing for reliable operation at higher power levels.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is optimized for easy interfacing with standard control circuits.
These features make the IPG20N10S4L-22A suitable for a variety of applications, including inverters, converters, and other power management systems.
Package
The IPG20N10S4L-22A is typically packaged in an ISOTOP or similar type of package, designed for power semiconductor applications. This package allows for efficient heat dissipation and compact mounting in electronic circuits.
Pinout
The IPG20N10S4L-22A is an N-channel MOSFET with a total of 8 pins. Its functions include:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal through which current enters the MOSFET.
Typically, the pin arrangement includes:
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Drain
- Pins 4-8: Additional terminals for thermal management or packaging.
This device is designed for high-voltage applications, handling up to 1000V with a continuous current rating of 20A. It is often used in power conversion, inverters, and motor control applications. Always refer to the specific datasheet for detailed specifications and pin configurations.
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal through which current enters the MOSFET.
Typically, the pin arrangement includes:
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Drain
- Pins 4-8: Additional terminals for thermal management or packaging.
This device is designed for high-voltage applications, handling up to 1000V with a continuous current rating of 20A. It is often used in power conversion, inverters, and motor control applications. Always refer to the specific datasheet for detailed specifications and pin configurations.
Manufacturer
The IPG20N10S4L-22A is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor and system solutions, focusing on areas such as power management, automotive, industrial, and security applications. The company is known for its innovative products, including power semiconductors, microcontrollers, sensors, and RF components. Infineon's solutions are crucial in enabling energy efficiency, connectivity, and security across various industries.
Application
The IPG20N10S4L-22A is an IGBT (Insulated Gate Bipolar Transistor) used primarily in high-power applications such as motor drives, renewable energy systems (solar inverters and wind turbines), industrial automation, and power supplies. Its high voltage and current ratings make it suitable for applications requiring efficient switching and control of electric power.
Equivalent
The IPG20N10S4L-22A is an IGBT (Insulated Gate Bipolar Transistor) used in various applications. Equivalent products include:
1. IGBTs from Infineon: FGH50N60SMD, FGA25N60
2. IGBTs from ON Semiconductor: MBRF20100S
3. IGBTs from Vishay: IGBT50N60
Always verify specifications, voltage, current ratings, and package type for compatibility.
1. IGBTs from Infineon: FGH50N60SMD, FGA25N60
2. IGBTs from ON Semiconductor: MBRF20100S
3. IGBTs from Vishay: IGBT50N60
Always verify specifications, voltage, current ratings, and package type for compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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