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IPG20N04S4L-08
MOSFETs N-Ch 40V 20A TDSON-8 OptiMOS-T2
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- Mfr。パート #IPG20N04S4L-08
- パッケージ
- データシート IPG20N04S4L-08 DataSheet
- 在庫中28319
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
概要
Description
The IPG20N04S4L-08 is a high-performance insulated gate bipolar transistor (IGBT) designed for various power electronic applications. This device combines the advantages of MOSFETs and bipolar transistors, offering high efficiency, fast switching speeds, and high voltage capability. With a rated voltage of 400V and a current handling capacity of 20A, it is well-suited for applications such as inverters, motor drives, and power supplies.
The IGBT features a low on-state voltage drop, which minimizes conduction losses, and excellent thermal stability. Its enhanced switching characteristics make it ideal for high-frequency applications. Additionally, it is packaged in a TO-220 or similar format, facilitating easy integration into electronic circuits.
Overall, the IPG20N04S4L-08 provides an effective solution for engineers seeking reliable and efficient switching devices in power electronics.
The IGBT features a low on-state voltage drop, which minimizes conduction losses, and excellent thermal stability. Its enhanced switching characteristics make it ideal for high-frequency applications. Additionally, it is packaged in a TO-220 or similar format, facilitating easy integration into electronic circuits.
Overall, the IPG20N04S4L-08 provides an effective solution for engineers seeking reliable and efficient switching devices in power electronics.
Features
The IPG20N04S4L-08 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, making it suitable for high-voltage applications.
2. On-Resistance: It boasts a low R_DS(on) value, typically around 20 mΩ, which enhances efficiency by minimizing power loss during operation.
3. Current Rating: The device can handle a continuous drain current (I_D) of up to 20A, allowing it to support substantial load requirements.
4. Gate Threshold Voltage: It offers a gate threshold voltage (V_GS(th)) in the range of 2-4V, ensuring compatibility with various driving voltages.
5. Fast Switching Speed: The MOSFET provides rapid switching capabilities, ideal for applications in switching power supplies and motor drivers.
6. Package Type: Typically housed in a TO-220 package, it allows for efficient heat dissipation.
Overall, the IPG20N04S4L-08 is suitable for a range of power management and conversion applications, including industrial and automotive sectors.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, making it suitable for high-voltage applications.
2. On-Resistance: It boasts a low R_DS(on) value, typically around 20 mΩ, which enhances efficiency by minimizing power loss during operation.
3. Current Rating: The device can handle a continuous drain current (I_D) of up to 20A, allowing it to support substantial load requirements.
4. Gate Threshold Voltage: It offers a gate threshold voltage (V_GS(th)) in the range of 2-4V, ensuring compatibility with various driving voltages.
5. Fast Switching Speed: The MOSFET provides rapid switching capabilities, ideal for applications in switching power supplies and motor drivers.
6. Package Type: Typically housed in a TO-220 package, it allows for efficient heat dissipation.
Overall, the IPG20N04S4L-08 is suitable for a range of power management and conversion applications, including industrial and automotive sectors.
Package
The IPG20N04S4L-08 is typically packaged in a TO-220 form factor, which is a common package type for power MOSFETs. This package offers good thermal performance and is suitable for various applications requiring efficient heat dissipation.
Pinout
The IPG20N04S4L-08 is an N-channel MOSFET from Infineon, featuring a total of 8 pins. Its primary functions include:
1. Gate (G) - Controls the MOSFET's switching action; typically receives input from a control signal.
2. Drain (D) - The output terminal through which the current flows when the device is on.
3. Source (S) - Connected to ground or the lower potential side of the load; the terminal through which current exits when the MOSFET is on.
4. Body Diode - Integrated within the structure, allows current flow in reverse direction under certain conditions.
The device is designed for high-efficiency applications, capable of handling significant voltage and current levels, making it suitable for power management and conversion applications.
1. Gate (G) - Controls the MOSFET's switching action; typically receives input from a control signal.
2. Drain (D) - The output terminal through which the current flows when the device is on.
3. Source (S) - Connected to ground or the lower potential side of the load; the terminal through which current exits when the MOSFET is on.
4. Body Diode - Integrated within the structure, allows current flow in reverse direction under certain conditions.
The device is designed for high-efficiency applications, capable of handling significant voltage and current levels, making it suitable for power management and conversion applications.
Manufacturer
The IPG20N04S4L-08 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer that specializes in power semiconductors, microcontrollers, sensors, and security solutions. The company is headquartered in Neubiberg, Germany, and serves various industries, including automotive, industrial, and consumer electronics. Infineon is known for its innovations in energy efficiency and performance, particularly in power management and digital security technologies.
Application
The IPG20N04S4L-08 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including industrial motor drives, power inverters, and renewable energy systems such as solar and wind power. It's also used in rail transport systems, welding equipment, and uninterruptible power supplies (UPS). Its efficient switching capabilities make it ideal for high-frequency operations in power electronics.
Equivalent
The IPG20N04S4L-08 is an N-channel MOSFET. Equivalent products may include:
1. STP20NF04
2. IRF320
3. AOD20N04
4. FQP20N04
5. BSS123
Always check specific parameters like voltage, current ratings, and package types for compatibility.
1. STP20NF04
2. IRF320
3. AOD20N04
4. FQP20N04
5. BSS123
Always check specific parameters like voltage, current ratings, and package types for compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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