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IPG20N04S4-12
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- Mfr。パート #IPG20N04S4-12
- パッケージ
- データシート IPG20N04S4-12 DataSheet
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仕様
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 12.2 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 18 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 41 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Dual |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | OptiMOS-T2 |
| Transistor Type | 2 N-Channel |
| Width | 5.15 mm |
| Part # Aliases | IPG2N4S412XT SP000705560 IPG20N04S412ATMA1 |
| Unit Weight | 0.003474 oz |
| Qualification | AEC-Q100 |
概要
Description
The IPG20N04S4-12 is a high-performance N-channel MOSFET designed for various power applications, particularly in switching and amplifying circuits. With a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 20A, it operates efficiently in demanding environments. This MOSFET features low on-resistance (RDS(on)), which minimizes power loss and enhances thermal performance, making it suitable for applications like power supplies, motor drives, and automotive electronics.
Its fast switching capabilities enable high-frequency operation, providing efficiency in applications such as converters and inverters. The device is housed in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. Its robust construction ensures reliability and longevity in critical applications. Overall, the IPG20N04S4-12 represents a versatile solution for engineers seeking efficient power management in their designs.
Its fast switching capabilities enable high-frequency operation, providing efficiency in applications such as converters and inverters. The device is housed in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. Its robust construction ensures reliability and longevity in critical applications. Overall, the IPG20N04S4-12 represents a versatile solution for engineers seeking efficient power management in their designs.
Features
The IPG20N04S4-12 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 400V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 20A, providing robust performance in power circuits.
3. RDS(on): The on-resistance is low, typically around 0.13 ohms, which minimizes power loss and improves efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for easy interfacing with logic-level control signals.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Switching Speed: It offers fast switching capabilities, making it suitable for applications in DC-DC converters and motor drives.
7. Thermal Management: Designed to handle heat well, with a maximum junction temperature of 150°C.
These features make the IPG20N04S4-12 ideal for applications in industrial, automotive, and consumer electronics sectors requiring efficient power management.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 400V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 20A, providing robust performance in power circuits.
3. RDS(on): The on-resistance is low, typically around 0.13 ohms, which minimizes power loss and improves efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for easy interfacing with logic-level control signals.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Switching Speed: It offers fast switching capabilities, making it suitable for applications in DC-DC converters and motor drives.
7. Thermal Management: Designed to handle heat well, with a maximum junction temperature of 150°C.
These features make the IPG20N04S4-12 ideal for applications in industrial, automotive, and consumer electronics sectors requiring efficient power management.
Package
The IPG20N04S4-12 is typically available in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and ease of heat dissipation.
Pinout
The IPG20N04S4-12 is a N-channel MOSFET known for its low RDS(on) and high voltage rating. It typically comes in a TO-220 package, which has three pins.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET's switching operation. Applying a voltage here turns the MOSFET on.
2. Drain (D) - This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or negative side of the power supply. It serves as the return path for the current.
This device is commonly used in power management applications due to its efficiency and high-performance characteristics.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET's switching operation. Applying a voltage here turns the MOSFET on.
2. Drain (D) - This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or negative side of the power supply. It serves as the return path for the current.
This device is commonly used in power management applications due to its efficiency and high-performance characteristics.
Manufacturer
The manufacturer of the IPG20N04S4-12 is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany that specializes in various semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovation in power semiconductors, offering products such as MOSFETs, IGBTs, and integrated circuits that are widely used in energy-efficient applications. Infineon serves a diverse range of industries, including automotive, industrial automation, consumer electronics, and telecommunications, focusing on enhancing energy efficiency and sustainability through advanced semiconductor technologies.
Application
The IPG20N04S4-12 is an N-channel MOSFET primarily used in applications such as power supplies, motor drivers, DC-DC converters, and industrial automation. Its high voltage and current capabilities make it suitable for energy-efficient designs in renewable energy systems, electric vehicles, and consumer electronics. Additionally, it can be employed in switching applications and RF amplifiers due to its fast switching speeds and low on-resistance.
Equivalent
The IPG20N04S4-12 is a 40V N-channel MOSFET. Equivalent products include the IRF3205, STP40NF06L, and FDBL20N04. Check the specific parameters like RDS(on), gate charge, and package type for compatibility in your application. Always consult the datasheets for detailed comparisons.
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